Vishay Intertechnology - SQ2364EES-T1_GE3

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SQ2364EES-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQ2364EES-T1_GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; JESD-609 Code: e3; Terminal Form: GULL WING;
Datasheet SQ2364EES-T1_GE3 Datasheet
In Stock23,014
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 2 A
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 3
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .245 ohm
Other Names: SQ2364EES-T1_GE3CT
SQ2364EES-T1_GE3TR
SQ2364EES-T1_GE3DKR
Maximum Feedback Capacitance (Crss): 19 pF
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Reference Standard: AEC-Q101
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