SQD50P06-15L_GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SQD50P06-15L_GE3
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN;
Datasheet	SQD50P06-15L_GE3 Datasheet
In Stock	10,564

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	50 A
Maximum Pulsed Drain Current (IDM):	200 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0155 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	135 mJ
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
10,564	-	-

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