Vishay Intertechnology - SQJ147ELP-T1_GE3

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SQJ147ELP-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQJ147ELP-T1_GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 183 W; Minimum Operating Temperature: -55 Cel; Terminal Position: SINGLE;
Datasheet SQJ147ELP-T1_GE3 Datasheet
In Stock23,043
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton): 24 ns
Maximum Drain Current (ID): 90 A
Maximum Pulsed Drain Current (IDM): 200 A
Surface Mount: YES
No. of Terminals: 4
Maximum Power Dissipation (Abs): 183 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 123 ns
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0125 ohm
Avalanche Energy Rating (EAS): 45 mJ
Other Names: 742-SQJ147ELP-T1_GE3DKR
742-SQJ147ELP-T1_GE3CT
742-SQJ147ELP-T1_GE3TR
Maximum Feedback Capacitance (Crss): 365 pF
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
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