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Manufacturer | Vishay Intertechnology |
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Manufacturer's Part Number | SQJ147ELP-T1_GE3 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 183 W; Minimum Operating Temperature: -55 Cel; Terminal Position: SINGLE; |
Datasheet | SQJ147ELP-T1_GE3 Datasheet |
In Stock | 23,043 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Turn On Time (ton): | 24 ns |
Maximum Drain Current (ID): | 90 A |
Maximum Pulsed Drain Current (IDM): | 200 A |
Surface Mount: | YES |
No. of Terminals: | 4 |
Maximum Power Dissipation (Abs): | 183 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
Maximum Turn Off Time (toff): | 123 ns |
JESD-30 Code: | R-PSSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .0125 ohm |
Avalanche Energy Rating (EAS): | 45 mJ |
Maximum Feedback Capacitance (Crss): | 365 pF |
Polarity or Channel Type: | P-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 40 V |
Reference Standard: | AEC-Q101 |