SQJ461EP-T1_GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SQJ461EP-T1_GE3
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G4; Reference Standard: AEC-Q101;
Datasheet	SQJ461EP-T1_GE3 Datasheet
In Stock	5,382

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	21.7 A
Maximum Pulsed Drain Current (IDM):	85 A
Surface Mount:	YES
No. of Terminals:	4
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.015 ohm
Avalanche Energy Rating (EAS):	125 mJ
Other Names:	SQJ461EP-T1_GE3TR SQJ461EP-T1_GE3CT SQJ461EP-T1-GE3-ND SQJ461EP-T1_GE3DKR SQJ461EP-T1-GE3
Polarity or Channel Type:	P-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
5,382	-	-

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