Vishay Intertechnology - SQJ461EP-T1_GE3

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SQJ461EP-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQJ461EP-T1_GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G4; Reference Standard: AEC-Q101;
Datasheet SQJ461EP-T1_GE3 Datasheet
In Stock5,382
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 21.7 A
Maximum Pulsed Drain Current (IDM): 85 A
Surface Mount: YES
No. of Terminals: 4
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .015 ohm
Avalanche Energy Rating (EAS): 125 mJ
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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