SQJ488EP-T1_GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SQJ488EP-T1_GE3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; JESD-30 Code: R-PSSO-G4; No. of Elements: 1;
Datasheet	SQJ488EP-T1_GE3 Datasheet
In Stock	6,263

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	1.68 mJ
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	42 A
Maximum Pulsed Drain Current (IDM):	170 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	100 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Reference Standard:	AEC-Q101
Case Connection:	DRAIN
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.021 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
6,263	-	-

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;

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