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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SQJ912DEP-T1_GE3 |
| Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-PSSO-G4; Maximum Operating Temperature: 175 Cel; |
| Datasheet | SQJ912DEP-T1_GE3 Datasheet |
| In Stock | 9,072 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Turn On Time (ton): | 30 ns |
| Maximum Drain Current (ID): | 30 A |
| Maximum Pulsed Drain Current (IDM): | 120 A |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 85 ns |
| JESD-30 Code: | R-PSSO-G4 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0073 ohm |
| Avalanche Energy Rating (EAS): | 18 mJ |
| Other Names: |
742-SQJ912DEP-T1_GE3CT 742-SQJ912DEP-T1_GE3TR 742-SQJ912DEP-T1_GE3DKR |
| Maximum Feedback Capacitance (Crss): | 44 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 40 V |
| Reference Standard: | AEC-Q101 |









