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Manufacturer | Vishay Intertechnology |
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Manufacturer's Part Number | SQJA81EP-T1_GE3 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 130 A; Maximum Turn On Time (ton): 35 ns; Maximum Turn Off Time (toff): 67 ns; |
Datasheet | SQJA81EP-T1_GE3 Datasheet |
In Stock | 2,906 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Turn On Time (ton): | 35 ns |
Maximum Drain Current (ID): | 46 A |
Maximum Pulsed Drain Current (IDM): | 130 A |
Surface Mount: | YES |
Terminal Finish: | TIN |
No. of Terminals: | 4 |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
Maximum Turn Off Time (toff): | 67 ns |
JESD-30 Code: | R-PSSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .0173 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 88 mJ |
Maximum Feedback Capacitance (Crss): | 75 pF |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 80 V |
Reference Standard: | AEC-Q101 |
Peak Reflow Temperature (C): | 260 |