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Manufacturer | Vishay Intertechnology |
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Manufacturer's Part Number | SQJQ480E-T1_GE3 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Terminal Position: SINGLE; JESD-30 Code: R-PSSO-G4; |
Datasheet | SQJQ480E-T1_GE3 Datasheet |
In Stock | 1,450 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 150 A |
Maximum Pulsed Drain Current (IDM): | 210 A |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 4 |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .003 ohm |
Avalanche Energy Rating (EAS): | 140 mJ |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 80 V |
Reference Standard: | AEC-Q101 |
Peak Reflow Temperature (C): | 260 |