SQM120P04-04L-GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SQM120P04-04L-GE3
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 40 V; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
Datasheet	SQM120P04-04L-GE3 Datasheet
In Stock	3,214

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	320 mJ
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	120 A
JEDEC-95 Code:	TO-263AB
Maximum Pulsed Drain Current (IDM):	330 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	40 V
Qualification:	Not Qualified
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Peak Reflow Temperature (C):	260
Maximum Drain-Source On Resistance:	.004 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,214	-	-

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