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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SQS415ENW-T1_GE3 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0161 ohm; Terminal Position: DUAL; Package Body Material: PLASTIC/EPOXY; |
| Datasheet | SQS415ENW-T1_GE3 Datasheet |
| In Stock | 5,838 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 16 A |
| Maximum Pulsed Drain Current (IDM): | 64 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 5 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-F5 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0161 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 31.2 mJ |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 40 V |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | 260 |
