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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SQSA80ENW-T1_GE3 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Terminals: 5; JESD-30 Code: S-PDSO-F5; |
| Datasheet | SQSA80ENW-T1_GE3 Datasheet |
| In Stock | 7,135 |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 24.2 mJ |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 18 A |
| Maximum Pulsed Drain Current (IDM): | 72 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -55 Cel |
| No. of Terminals: | 5 |
| Minimum DS Breakdown Voltage: | 80 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-F5 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Reference Standard: | AEC-Q101 |
| Case Connection: | DRAIN |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | .027 ohm |
