SUM110P04-05-E3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SUM110P04-05-E3
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Maximum Drain Current (Abs) (ID): 110 A; Package Body Material: PLASTIC/EPOXY;
Datasheet	SUM110P04-05-E3 Datasheet
In Stock	11,024

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	480 ns
Maximum Drain Current (ID):	39 A
Maximum Pulsed Drain Current (IDM):	240 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	375 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	220 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Power Dissipation Ambient:	15 W
Maximum Drain-Source On Resistance:	.005 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	281 mJ
Other Names:	SUM110P04-05-E3TR SUM110P04-05-E3-ND SUM110P04-05-E3DKR SUM110P0405E3 SUM110P04-05-E3CT
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	110 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
11,024	-	-

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