SI9953DY-T1 by Vishay Siliconix | Transistors

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Manufacturer	Vishay Siliconix
Manufacturer's Part Number	SI9953DY-T1
Description	P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	SI9953DY-T1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	2.3 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	8
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	2 W
Maximum Drain-Source On Resistance:	.4 ohm

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