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Manufacturer | Wolfspeed |
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Manufacturer's Part Number | CCB021M12FM3 |
Description | N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Case Connection: ISOLATED; |
Datasheet | CCB021M12FM3 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Configuration: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
Transistor Element Material: | SILICON CARBIDE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Feedback Capacitance (Crss): | 16 pF |
Maximum Pulsed Drain Current (IDM): | 106 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
Minimum Operating Temperature: | -40 Cel |
No. of Terminals: | 22 |
Minimum DS Breakdown Voltage: | 1200 V |
Terminal Position: | UPPER |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X22 |
No. of Elements: | 6 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Reference Standard: | IEC-60747-8-4 |
Case Connection: | ISOLATED |
Maximum Drain-Source On Resistance: | .0279 ohm |