30 ppm Crystal Oscillators 2,384

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Part	Manufacturer	Crystal or Resonator Type	Mounting Feature	Frequency Tolerance	Aging	Load Capacitance	Additional Features	Series Resistance	Frequency Stability	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Nominal Operating Frequency	Drive Level	Physical Dimension	Maximum Operating Temperature
NKS2NAK1-33.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	50 %	-20 Cel			33 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NAD1-40.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	30 %	-20 Cel			40 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NAD1-48.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	30 %	-20 Cel			48 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NEK1-54.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	50 %	-40 Cel			54 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
GB2450007	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm	3 PPM/FIRST YEAR		AT-CUT						24.5 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NKS2NAD1-26.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	30 %	-20 Cel			26 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NEK1-27.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	50 %	-40 Cel			27 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
GC0600025	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	16 pF	AT-CUT; TR	100 ohm	30 %	-20 Cel			6 MHz	100 uW	L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)	70 Cel
NKS2NAK1-12.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT; BULK	150 ohm	50 %	-20 Cel			12 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
NKS2NAK1-26.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	50 %	-20 Cel			26 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
49SMLB07.3728-20GHE-E	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT-CUT		50 %	-40 Cel			7.3728 MHz	100 uW		85 Cel
GB2000033	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm	3 PPM/FIRST YEAR		AT-CUT						20 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
GB4800023	Diodes Incorporated	PARALLEL - 3RD OVERTONE	THROUGH HOLE MOUNT	30 ppm	3 PPM/FIRST YEAR		AT-CUT						48 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
FH1200001	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR, 7 INCH	150 ohm	30 %	-20 Cel			12 MHz	10 uW	L2.5XB2.0XH0.5 (mm)/L0.098XB0.079XH0.02 (inch)	70 Cel
NES5NAK1-50.0000-16	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	16 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-20 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm	70 Cel
GB0600013	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm	3 PPM/FIRST YEAR		AT-CUT						6 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NKS2NAK1-33.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	50 %	-20 Cel			33 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NES5NED1-08.0000-08	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT; MIL-STD-883	40 ohm	30 %	-40 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm	85 Cel
NES5NED1-50.0000-32	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	32 pF	AT CUT; MIL-STD-883	40 ohm	30 %	-40 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm	85 Cel
NKS2NEK1-40.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	50 %	-40 Cel			40 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
49SMLB25.0000-16GGC-E(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	16 pF	AT-CUT; TR		30 %	-20 Cel			25 MHz	100 uW		70 Cel
NKS2NED1-32.7680-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	30 %	-40 Cel			32.768 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
GB5000012	Diodes Incorporated	PARALLEL - 3RD OVERTONE	THROUGH HOLE MOUNT	30 ppm	3 PPM/FIRST YEAR		AT-CUT						50 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NES5NAD1-50.0000-16	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	16 pF	AT CUT; MIL-STD-883	40 ohm	30 %	-20 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm	70 Cel
NES5NAK1-50.0000-08(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-20 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm	70 Cel
GB1200016	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm	3 PPM/FIRST YEAR		AT-CUT						12 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NKS6NAD1-25.0000-16	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	16 pF	AT CUT	20 ohm	30 %	-20 Cel			25 MHz	10 uW	6mm x 3.5mm x 1.1mm	70 Cel
FL2700102Z	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	12 pF	AT-CUT; TR, 7 INCH	60 ohm	30 %	-20 Cel	GOLD OVER NICKEL	e4	27 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)	70 Cel
NES5NED1-08.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT; MIL-STD-883	40 ohm	30 %	-40 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm	85 Cel
NKS2NAK1-12.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT; TR	150 ohm	50 %	-20 Cel			12 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
NKS2NEK1-37.5000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	50 %	-40 Cel			37.5 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
49SMLB037-30GHE(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm		30 pF	AT CUT; TAPE AND REEL	160 ohm	50 %	-40 Cel			3.6864 MHz	500 uW	L12.0XB5.0XH4.3 (mm)/L0.472XB0.197XH0.169 (inch)	90 Cel
NKS2NAK1-48.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	50 %	-20 Cel			48 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
FH3000007	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR, 7 INCH	60 ohm	30 %	-20 Cel			30 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	70 Cel
GA0240006	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm	3 PPM/FIRST YEAR		AT-CUT						24 MHz	100 uW	L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)
NKS2NEK1-33.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	50 %	-40 Cel			33 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NAK1-40.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	50 %	-20 Cel			40 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
F62400017	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	18 pF	AT CUT; TR, 7 INCH	50 ohm	30 %	-40 Cel			24 MHz	10 uW	6X3.5X1.2 m	85 Cel
NKS2NED1-25.0000-16	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	16 pF	AT CUT; BULK	80 ohm	30 %	-40 Cel			25 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	85 Cel
GB1100019	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm	3 PPM/FIRST YEAR		AT-CUT						11 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
GB3200008	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm	3 PPM/FIRST YEAR		AT-CUT						32 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NKS2NEK1-38.4000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	50 %	-40 Cel			38.4 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NED1-20.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	20 pF	AT CUT; TR	80 ohm	30 %	-40 Cel			20 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
NKS2NAK1-32.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	50 %	-20 Cel			32 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	70 Cel
NKS2NEK1-26.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	50 %	-40 Cel			26 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)	85 Cel
GA2450004	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm	3 PPM/FIRST YEAR		AT-CUT						24.5 MHz	100 uW	L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)
NKS2NED1-12.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT; BULK	150 ohm	30 %	-40 Cel			12 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)	85 Cel
NKS6NAD1-25.0000-18(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	3 PPM/FIRST YEAR	18 pF	AT CUT	20 ohm	30 %	-20 Cel			25 MHz	10 uW	6.0mm x 3.5mm x 1.1mm	70 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance