30 ppm Crystal Oscillators 2,384

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Part	Manufacturer	Crystal or Resonator Type	Mounting Feature	Frequency Tolerance	Minimum Operating Frequency	Maximum Operating Frequency	Aging	Load Capacitance	Additional Features	Series Resistance	Frequency Stability	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Nominal Operating Frequency	Drive Level	Physical Dimension	Manufacturer Series	Maximum Operating Temperature
NKS2NAK1-66.0000-32(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	32 pF	AT CUT; TR	60 ohm	50 %	-20 Cel			66 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		70 Cel
NKS2NEK1-37.5000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	50 %	-40 Cel			37.5 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
GB0400004	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						4 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
GB2000040	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						20 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
GB5000016	Diodes Incorporated	PARALLEL - 3RD OVERTONE	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						50 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NKS2NEK1-27.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	50 %	-40 Cel			27 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
GB0610005	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						6.1 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NKS2NAD1-24.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	30 %	-20 Cel			24 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NKS2NAK1-24.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	50 %	-20 Cel			24 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
GB0600021	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						6 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
GB2400030	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						24 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
49S04.9152GHE-E	Diodes Incorporated	SERIES - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT	20 ohm	50 %	-40 Cel			4.9152 MHz	100 uW			85 Cel
49S16.0000GHE-E	Diodes Incorporated	SERIES - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT	20 ohm	50 %	-40 Cel			16 MHz	100 uW			85 Cel
GB1430027	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						14.3 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
GB2500019	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						25 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NES5NEK1-50.0000-32	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	32 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-40 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm		85 Cel
NKS2NAK1-20.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	50 %	-20 Cel			20 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
GB2500025	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						25 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NKS2NEK1-30.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	50 %	-40 Cel			30 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
GB0400005	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR	16 pF	AT CUT; BAG; BOX	120 ohm	30 %	-20 Cel			4 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)		70 Cel
NKS2NAK1-32.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	50 %	-20 Cel			32 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NES5NAK1-08.0000-08(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	8 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-20 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm		70 Cel
NES5NEK1-08.0000-08	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	8 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-40 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm		85 Cel
NES5NAK1-08.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-20 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm		70 Cel
NKS2NED1-32.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	30 %	-40 Cel			32 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
GB2000039	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						20 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NES7NAK-FREQ-8(T)	Diodes Incorporated	PARALLEL - 3RD OVERTONE	SURFACE MOUNT	30 ppm	30 MHz	56 MHz		8 pF	TAPE AND REEL; AT-CUT CRYSTAL	80 ohm	50 %	-20 Cel	Gold (Au)	e4		500 uW	L7.2XB5.2XH1.4 (mm)/L0.283XB0.205XH0.055 (inch)	NES7	70 Cel
NES5NEK1-08.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-40 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm		85 Cel
49SMLB24.0000-12GGC-E	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT-CUT; BULK		30 %	-20 Cel			24 MHz	100 uW			70 Cel
FL1200135	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	18 pF	AT CUT; TR, 7 INCH	100 ohm	50 %	-20 Cel	GOLD OVER NICKEL	e4	12 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)		70 Cel
NKS2NEK1-32.7680-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	50 %	-40 Cel			32.768 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
49SNC20.0000-18GHE(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm				18 pF	AT-CUT; TR	30 ohm	50 %	-40 Cel			20 MHz	500 uW	L13.3XB5.5XH5.2 (mm)/L0.524XB0.217XH0.205 (inch)		85 Cel
GB2500088	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						25 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NKS2NAD1-24.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	30 %	-20 Cel			24 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
GB0800022	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						8 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NKS2NAD1-30.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	30 %	-20 Cel			30 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
49SNC22.1184GGC-E(T)	Diodes Incorporated	SERIES - FUNDAMENTAL	SURFACE MOUNT	30 ppm					AT-CUT; TR		30 %	-20 Cel			22.1184 MHz	500 uW	L13.3XB5.5XH5.2 (mm)/L0.524XB0.217XH0.205 (inch)		70 Cel
NKS2NEK1-25.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	50 %	-40 Cel			25 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		85 Cel
GA2450005	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						24.5 MHz	100 uW	L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)
NKS2NAK1-27.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	50 %	-20 Cel			27 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
FP0730017Z	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	18 pF	AT-CUT; TR, 7 INCH	60 ohm	30 %	-40 Cel			7.3728 MHz	10 uW	L7.0XB5.0XH1.1 (mm)/L0.276XB0.197XH0.043 (inch)		85 Cel
FX2400032	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT-CUT, 7 INCH	40 ohm	30 %	-20 Cel			24 MHz	10 uW	L6.0XB3.5XH1.0 (mm)/L0.236XB0.138XH0.039 (inch)		70 Cel
NES5NAD1-08.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT; MIL-STD-883	40 ohm	30 %	-20 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm		70 Cel
NKS2NAD1-32.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	30 %	-20 Cel			32 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NKS2NAK1-40.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	50 %	-20 Cel			40 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NES5NAD1-50.0000-08	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	8 pF	AT CUT; MIL-STD-883	40 ohm	30 %	-20 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm		70 Cel
FL1200060	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	18 pF	AT CUT; TR, 7 INCH	100 ohm	30 %	-20 Cel	GOLD OVER NICKEL	e4	12 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)		70 Cel
NES7NAD1-FREQ-8(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	6 MHz	56 MHz		8 pF	TAPE AND REEL; AT-CUT CRYSTAL	110 ohm	30 %	-20 Cel	Gold (Au)	e4		500 uW	L7.2XB5.2XH1.4 (mm)/L0.283XB0.205XH0.055 (inch)	NES7	70 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance