30 ppm Crystal Oscillators 2,384

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Part	Manufacturer	Crystal or Resonator Type	Mounting Feature	Frequency Tolerance	Minimum Operating Frequency	Maximum Operating Frequency	Aging	Load Capacitance	Additional Features	Series Resistance	Frequency Stability	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Nominal Operating Frequency	Drive Level	Physical Dimension	Manufacturer Series	Maximum Operating Temperature
GA0350013	Diodes Incorporated	PARALLEL - 3RD OVERTONE	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						35 MHz	100 uW	L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)
GB3000013	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						30 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
GB1220006	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						12.2 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NKS2NEK1-27.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; TR	80 ohm	50 %	-40 Cel			27 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
NES5NEK1-08.0000-32(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	32 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-40 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm		85 Cel
NKS2NAD1-33.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	30 %	-20 Cel			33 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NKS2NAK1-33.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	50 %	-20 Cel			33 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NES5NEK1-50.0000-16	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	16 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-40 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm		85 Cel
GB2500059	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						25 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NKS2NED1-24.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	30 %	-40 Cel			24 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
NKS2NED1-24.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; TR	80 ohm	30 %	-40 Cel			24 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
FP0800056Z	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	18 pF	AT-CUT; TR, 7 INCH	60 ohm	30 %	-40 Cel			8 MHz	10 uW	L7.0XB5.0XH1.1 (mm)/L0.276XB0.197XH0.043 (inch)		85 Cel
GB1000008	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						10 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NKS2NAK1-26.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	50 %	-20 Cel			26 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NKS2NED1-38.4000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	30 %	-40 Cel			38.4 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
NKS2NAK1-12.0000-16	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	16 pF	AT CUT; BULK	150 ohm	50 %	-20 Cel			12 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		70 Cel
NKS2NAK1-66.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	50 %	-20 Cel			66 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		70 Cel
FL1200012	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	12 pF	AT-CUT; TR, 7 INCH	100 ohm	30 %	-20 Cel	GOLD OVER NICKEL	e4	12 MHz	100 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)		70 Cel
NES7NAK1-24.5760-(T)	Diodes Incorporated	SERIES - FUNDAMENTAL	SURFACE MOUNT	30 ppm					AT CUT; TAPE AND REEL		50 %	-20 Cel			24.576 MHz	10 uW	L7.2XB5.2XH1.4 (mm)/L0.283XB0.205XH0.055 (inch)		70 Cel
NES7NED1-FREQ-8(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	6 MHz	56 MHz		8 pF	TAPE AND REEL; AT-CUT CRYSTAL	110 ohm	30 %	-40 Cel	Gold (Au)	e4		500 uW	L7.2XB5.2XH1.4 (mm)/L0.283XB0.205XH0.055 (inch)	NES7	85 Cel
NES5NEK1-50.0000-32(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	32 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-40 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm		85 Cel
NKS2NAD1-20.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; TR	80 ohm	30 %	-20 Cel			20 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
GB1200026	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						12 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NKS2NED1-33.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	30 %	-40 Cel			33 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
GB0400034	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			5 PPM/FIRST YEAR	30 pF	AT CUT; BAG	80 ohm	30 %	-25 Cel			4 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)		70 Cel
NKS2NAK1-20.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	50 %	-20 Cel			20 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
GA7110001	Diodes Incorporated	PARALLEL - 3RD OVERTONE	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						71.1 MHz	100 uW	L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)
NKS2NEK1-32.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	50 %	-40 Cel			32 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
NKS2NAK1-27.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	50 %	-20 Cel			27 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NKS2NAD1-12.0000-16	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	16 pF	AT CUT; BULK	150 ohm	30 %	-20 Cel			12 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		70 Cel
NKS2NED1-32.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	30 %	-40 Cel			32 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
49SMLB04.0000-20GHE-E(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT-CUT; TR	20 ohm	50 %	-40 Cel			4 MHz	100 uW			85 Cel
49SMLB24.0000-18GGC-E(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	18 pF	AT-CUT; TR		30 %	-20 Cel			24 MHz	100 uW			70 Cel
NKS2NEK1-66.0000-32	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	32 pF	AT CUT; BULK	60 ohm	50 %	-40 Cel			66 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		85 Cel
NKS2NEK1-32.7680-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	50 %	-40 Cel			32.768 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
NKS2NAK1-24.5760-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	50 %	-20 Cel			24.576 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NKS2NAK1-32.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	50 %	-20 Cel			32 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NES5NAD1-08.0000-08	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	8 pF	AT CUT; MIL-STD-883	40 ohm	30 %	-20 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm		70 Cel
49S08.0000GHE-E(AS)	Diodes Incorporated	SERIES - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			5 PPM/FIRST YEAR		AT-CUT	80 ohm	50 %	-40 Cel			8 MHz	500 uW	L11.18XB4.65XH3.5 (mm)/L0.44XB0.183XH0.138 (inch)		85 Cel
NKS2NED1-32.7680-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	30 %	-40 Cel			32.768 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
NKS2NAK1-25.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT; TR	80 ohm	50 %	-20 Cel			25 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		70 Cel
GB3000004	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						30 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
49S03.6864-16GGC-E	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			5 PPM/FIRST YEAR	16 pF	AT-CUT	180 ohm	30 %	-20 Cel			3.6864 MHz	100 uW	L11.18XB4.65XH3.5 (mm)/L0.44XB0.183XH0.138 (inch)		70 Cel
NKS2NAD1-54.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	30 %	-20 Cel			54 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
GB2450031	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						24.5 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
XR20P5J030.000080F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	16 pF	AT CUT	80 ohm	70 %	-40 Cel			30 MHz	10 uW	2mm x 1.6mm x 0.45mm		125 Cel
XR32L5H020.000040F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	12 pF	AT CUT	60 ohm	50 %	-40 Cel			20 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		105 Cel
XR32J5K066.0000A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	10 pF	AT CUT	40 ohm	100 %	-40 Cel			66 MHz	10 uW	3.2mm x 2.5mm x 0.68mm		125 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance