Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1600 A |
1.64 V |
50000 uA |
1 |
DISK BUTTON |
3000 V |
180 Cel |
HIGH VOLTAGE |
-40 Cel |
O-CEDB-N2 |
1 |
DO-200AB |
17400 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
10 uA |
1 |
1000 V |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
-65 Cel |
Tin (Sn) |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
40 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.9 V |
2.5 us |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
400 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.7 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
60 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
150 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
1.35 V |
9000 uA |
1 |
POST/STUD MOUNT |
1000 V |
180 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN OVER NICKEL |
O-MUPM-D1 |
CATHODE |
1 |
DO-203AB |
1250 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.1 A |
1 V |
.001 us |
SCHOTTKY |
.2 uA |
1 |
50 V |
LONG FORM |
Rectifier Diodes |
60 V |
125 Cel |
FAST RECOVERY |
Tin/Silver (Sn96.5Ag3.5) |
O-LALF-W2 |
ISOLATED |
.4 W |
1 |
DO-35 |
2 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
Matte Tin (Sn) - annealed |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-213AC |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.7 V |
.1 us |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
35 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.2 A |
1 V |
3 us |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
MATTE TIN |
O-XALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
.5 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
2 us |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
150 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-41 |
30 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.2 A |
.24 V |
.005 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-35 |
5 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2.5 A |
1.6 V |
20 us |
1 |
LONG FORM |
Rectifier Diodes |
1500 V |
150 Cel |
HIGH VOLTAGE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-201AD |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
35 A |
5 us |
1 |
POST/STUD MOUNT |
200 V |
175 Cel |
POWER |
-65 Cel |
TIN LEAD |
O-MUPM-D1 |
CATHODE |
Qualified |
1 |
DO-203AB |
500 A |
e0 |
SILICON |
MIL-19500/297 |
||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
.004 us |
1 |
LONG FORM |
75 V |
200 Cel |
-65 Cel |
MATTE TIN OVER NICKEL |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-213 |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.33 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
MATTE TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
25 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.1 V |
5 uA |
1 |
LONG FORM |
100 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY, LOW POWER LOSS |
1 |
DO-201AD |
125 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
3 A |
1.2 V |
2 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Qualified |
HIGH RELIABILITY |
1 |
100 A |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||||||||
|
Sensitron Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
SCHOTTKY |
1 |
LONG FORM |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-201AD |
96 A |
SILICON |
|||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.5 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-201AD |
80 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
790 A |
1.85 V |
3 us |
50000 uA |
1 |
DISK BUTTON |
2500 V |
150 Cel |
HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY |
-40 Cel |
O-CEDB-N2 |
FREE WHEELING DIODE, SNUBBER DIODE |
1 |
DO-200AB |
10050 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
Microsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.4 A |
1 |
LONG FORM |
225 V |
150 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
METALLURGICALLY BONDED |
1 |
DO-35 |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
2 A |
.05 us |
1 |
LONG FORM |
400 V |
150 Cel |
EFFICIENCY |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-15 |
60 A |
SILICON |
UL RECOGNIZED |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.2 V |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-201AD |
200 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.5 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
125 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
20 A |
e3 |
SILICON |
||||||||||||||||||||||||||
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
3.5 A |
1.1 V |
.03 us |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
EFFICIENCY |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
90 A |
e0 |
SILICON |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
35 A |
1 |
POST/STUD MOUNT |
200 V |
175 Cel |
POWER |
-65 Cel |
TIN LEAD |
O-MUPM-D1 |
ANODE |
Qualified |
1 |
DO-203AB |
500 A |
e0 |
SILICON |
MIL-19500/297 |
|||||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1 V |
.025 us |
10 uA |
1 |
LONG FORM |
100 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
1 |
DO-201AD |
150 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
1.4 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-204AL |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.475 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
20 V |
FAST RECOVERY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
80 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.24 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-213AA |
5 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.25 A |
1 V |
.004 us |
AVALANCHE |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
75 V |
200 Cel |
TIN |
O-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
.35 W |
1 |
DO-35 |
2 A |
e3 |
30 |
260 |
SILICON |
CECC50001-021 |
|||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.2 V |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
-65 Cel |
MATTE TIN |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-213AB |
30 A |
e3 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
.25 us |
1 |
LONG FORM |
600 V |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/429J |
|||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
.72 V |
.008 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
2 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
.88 V |
.015 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-204AC |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.75 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
60 V |
150 Cel |
EFFICIENCY |
-65 Cel |
TIN LEAD |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW POWER LOSS, FREE WHEELING |
1 |
DO-201AD |
80 A |
e0 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.37 V |
.01 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
ISOLATED |
Not Qualified |
.4 W |
1 |
DO-35 |
15 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.77 V |
SCHOTTKY |
150 uA |
1 |
LONG FORM |
100 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
DO-204AR |
290 A |
SILICON |
|||||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
2 us |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-41 |
30 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
5 A |
.52 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
500 A |
e0 |
SILICON |
|||||||||||||||||||||||||||
Texas Instruments |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
SINGLE |
.075 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
O-GALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1.6 V |
1 us |
200 uA |
1 |
LONG FORM |
1650 V |
140 Cel |
GENERAL PURPOSE |
O-LALF-W2 |
ISOLATED |
Not Qualified |
LEAKAGE CURRENT IS NOT AT 25 DEG C |
1 |
30 A |
SILICON |
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|
Vishay Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
1000 V |
MATTE TIN |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-213AB |
e3 |
SILICON |
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|
IXYS Corporation |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
49 A |
AVALANCHE |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
1800 V |
180 Cel |
GENERAL PURPOSE |
O-MUPM-D1 |
ANODE |
Not Qualified |
1 |
DO-203AB |
650 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.075 A |
SCHOTTKY |
1 |
LONG FORM |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
DO-35 |
e0 |
SILICON |
MIL-19500/444 |
||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.4 V |
.5 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.2 W |
1 |
DO-213AA |
4 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.5 A |
1.3 V |
.25 us |
5 uA |
1 |
600 V |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-213AA |
10 A |
e3 |
30 |
260 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.