Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.37 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
20 V |
125 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW POWER LOSS, FREE WHEELING DIODE |
1 |
DO-201AD |
80 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
International Rectifier |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.52 V |
SCHOTTKY |
7000 uA |
1 |
LONG FORM |
100 V |
175 Cel |
GENERAL PURPOSE |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AR |
1900 A |
40 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
140 V |
175 Cel |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
2 A |
e2 |
40 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.34 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
45 V |
125 Cel |
O-LELF-R2 |
ISOLATED |
METALLURGICALLY BONDED |
1 |
DO-213AB |
25 A |
30 |
250 |
SILICON |
||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
40 V |
125 Cel |
-65 Cel |
O-PELF-R2 |
ISOLATED |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.3 V |
.3 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
125 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
100 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1 V |
.025 us |
10 uA |
1 |
LONG FORM |
150 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
150 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.5 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
150 Cel |
-65 Cel |
Matte Tin (Sn) |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW POWER LOSS, FREE WHEELING DIODE |
1 |
DO-41 |
40 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||
|
Semikron International |
RECTIFIER DIODE |
UPPER |
HIGH CURRENT CABLE |
1 |
NO |
ROUND |
METAL |
SINGLE |
50 A |
1.6 V |
600 uA |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
1600 V |
180 Cel |
POWER |
-40 Cel |
TIN SILVER |
O-MUPM-H1 |
ANODE |
Not Qualified |
FREE WHEELING DIODE |
1 |
600 A |
e2 |
SILICON |
||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.7 V |
.075 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
HIGH CURRENT CABLE |
1 |
NO |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
600 A |
1.31 V |
35000 uA |
1 |
POST/STUD MOUNT |
1200 V |
180 Cel |
HIGH VOLTAGE HIGH POWER |
-40 Cel |
O-CUPM-H1 |
CATHODE |
1 |
13600 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 V |
5 uA |
1 |
LONG FORM |
600 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY, LOW POWER LOSS |
1 |
DO-201AD |
125 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1.2 A |
1.6 V |
.045 us |
AVALANCHE |
.5 uA |
1 |
LONG FORM |
400 V |
150 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
20 A |
e0 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.25 A |
.004 us |
1 |
LONG FORM |
75 V |
200 Cel |
TIN |
O-LALF-W2 |
1 |
ISOLATED |
.35 W |
1 |
DO-35 |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.25 A |
.75 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
75 V |
200 Cel |
TIN |
O-LALF-W2 |
1 |
ISOLATED |
.35 W |
1 |
DO-35 |
.5 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
National Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.004 us |
1 |
LONG FORM |
75 V |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-35 |
SILICON |
||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.25 A |
1 V |
.004 us |
AVALANCHE |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
75 V |
200 Cel |
TIN |
O-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
.35 W |
1 |
DO-35 |
2 A |
e3 |
30 |
260 |
SILICON |
CECC50001-021 |
|||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
Matte Tin (Sn) |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
30 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
SCHOTTKY |
1 |
LONG FORM |
GENERAL PURPOSE |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
80 A |
e0 |
SILICON |
MIL-19500/620E |
|||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
1 |
LONG FORM |
TIN LEAD |
O-LELF-R2 |
1 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/240J |
||||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
2.2 V |
.1 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
ULTRA FAST RECOVERY POWER |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-41 |
35 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.33 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
MATTE TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
25 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.49 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
FAST RECOVERY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
120 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.03 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
||||||||||||||||||||||||||
National Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 V |
.004 us |
1 |
LONG FORM |
75 V |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-35 |
SILICON |
|||||||||||||||||||||||||||||||||||
National Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 V |
.004 us |
1 |
LONG FORM |
75 V |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-35 |
SILICON |
|||||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
6 A |
.875 V |
.03 us |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
ULTRA FAST RECOVERY POWER |
-65 Cel |
TIN LEAD OVER NICKEL |
O-XALF-W2 |
ISOLATED |
Qualified |
5 W |
HIGH RELIABILITY, METALLURGICALLY BONDED |
1 |
125 A |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
5 A |
AVALANCHE |
1 |
LONG FORM |
800 V |
POWER |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
100 A |
e0 |
SILICON |
MIL-19500/420G |
|||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.25 us |
1 |
LONG FORM |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/429J |
||||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
3 A |
.4 us |
1 |
LONG FORM |
FAST RECOVERY POWER |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
80 A |
e0 |
SILICON |
MIL-19500/411L |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.06 us |
AVALANCHE |
1 |
LONG FORM |
900 V |
150 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
HIGH RELIABILITY |
1 |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||||||
|
Sensitron Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
150 Cel |
-40 Cel |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
SILICON |
|||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
60 V |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW POWER LOSS, FREE WHEELING DIODE |
1 |
DO-41 |
25 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.03 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
HIGH CURRENT CABLE |
1 |
NO |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
480 A |
1.62 V |
15000 uA |
1 |
POST/STUD MOUNT |
1600 V |
190 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CUPM-H1 |
CATHODE |
1 |
DO-205AB |
8640 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
1.4 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-204AL |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
1.4 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-204AC |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
1 V |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
LOW POWER LOSS |
1 |
DO-204AC |
50 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.06 us |
AVALANCHE |
1 |
LONG FORM |
900 V |
150 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
e0 |
SILICON |
||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
.005 us |
1 |
LONG FORM |
75 V |
TIN LEAD |
O-XELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
e0 |
SILICON |
MIL-19500/578E |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
45 V |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
DO-41 |
e0 |
SILICON |
MIL-19500/586 |
|||||||||||||||||||||||||||||||
Defense Logistics Agency |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.03 us |
1 |
LONG FORM |
ULTRA FAST RECOVERY |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
125 A |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
MIL-19500/742 |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
2 us |
1 |
LONG FORM |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
e0 |
SILICON |
MIL-19500/427K |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1.2 A |
1.6 V |
.045 us |
AVALANCHE |
.5 uA |
1 |
LONG FORM |
400 V |
150 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
HIGH RELIABILITY |
1 |
20 A |
e0 |
SILICON |
MIL-19500 |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.1 A |
.45 V |
.005 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
125 Cel |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.2 W |
1 |
DO-213AA |
.75 A |
e2 |
30 |
260 |
SILICON |
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|
Semikron International |
RECTIFIER DIODE |
UPPER |
HIGH CURRENT CABLE |
1 |
NO |
ROUND |
METAL |
SINGLE |
50 A |
1.8 V |
AVALANCHE |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
5000 V |
160 Cel |
GENERAL PURPOSE |
-40 Cel |
O-MUPM-H1 |
ANODE |
Not Qualified |
FREEWHEELING DIODE |
1 |
700 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Sensitron Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
175 Cel |
-65 Cel |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-41 |
30 A |
SILICON |
||||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
2 us |
1 |
LONG FORM |
800 V |
175 Cel |
-65 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
SILICON |
UL RECOGNIZED |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.