Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
PURE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
30 A |
260 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.03 A |
1 V |
SCHOTTKY |
.2 uA |
1 |
60 V |
LONG FORM |
Rectifier Diodes |
60 V |
125 Cel |
GENERAL PURPOSE |
Tin/Silver (Sn/Ag) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT, BOX:12500 |
1 |
.5 A |
e2 |
40 |
260 |
SILICON |
||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.075 us |
1 |
LONG FORM |
250 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
.3 W |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
1.1 V |
10 uA |
1 |
600 V |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-213AB |
30 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.4 A |
1 |
LONG FORM |
225 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AA |
e0 |
SILICON |
|||||||||||||||||||||||||||||||
|
IXYS Corporation |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
11 A |
1.4 V |
AVALANCHE |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
1600 V |
180 Cel |
GENERAL PURPOSE |
O-MUPM-D1 |
ANODE |
Not Qualified |
1 |
DO-203AA |
250 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
3 A |
.15 us |
1 |
LONG FORM |
400 V |
FAST RECOVERY POWER |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
80 A |
e0 |
SILICON |
MIL-19500/411L |
|||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
20 A |
.15 us |
1 |
POST/STUD MOUNT |
100 V |
175 Cel |
FAST RECOVERY |
-65 Cel |
TIN LEAD |
O-MUPM-D1 |
CATHODE |
Qualified |
1 |
DO-203AA |
250 A |
e0 |
SILICON |
MIL-19500/304 |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
20 A |
.15 us |
1 |
POST/STUD MOUNT |
100 V |
175 Cel |
FAST RECOVERY |
-65 Cel |
TIN LEAD |
O-MUPM-D1 |
ANODE |
Qualified |
1 |
DO-203AA |
250 A |
e0 |
SILICON |
MIL-19500/304 |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.15 us |
1 |
LONG FORM |
400 V |
175 Cel |
FAST RECOVERY POWER |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
80 A |
e0 |
SILICON |
MIL-19500/411L |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
3 A |
1.2 V |
2 us |
1 uA |
1 |
400 V |
LONG FORM |
400 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
HIGH RELIABILITY |
1 |
440 V |
100 A |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
75 V |
175 Cel |
Tin/Silver (Sn97.5Ag2.5) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
.55 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
.88 V |
.015 us |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-204AC |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Semikron International |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
25 A |
1.55 V |
300 uA |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
400 V |
180 Cel |
POWER |
-40 Cel |
TIN SILVER |
O-MUPM-D1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-203AA |
320 A |
e2 |
SILICON |
|||||||||||||||||||||||||
|
Semikron International |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
95 A |
1.5 V |
600 uA |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
1600 V |
180 Cel |
POWER |
-40 Cel |
TIN SILVER |
O-MUPM-D1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-203AB |
1000 A |
e2 |
SILICON |
|||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
10 A |
.77 V |
SCHOTTKY |
50 uA |
1 |
100 V |
LONG FORM |
100 V |
150 Cel |
SUPER FAST RECOVERY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
100 V |
130 A |
SILICON |
IEC-61249; MIL-STD-750 |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
6 A |
1.4 V |
.3 us |
15 uA |
1 |
POST/STUD MOUNT |
200 V |
150 Cel |
FAST RECOVERY |
-65 Cel |
O-MUPM-D1 |
ANODE |
FREE WHEELING DIODE |
1 |
DO-203AA |
90 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
1.85 V |
.15 us |
100 uA |
1 |
POST/STUD MOUNT |
800 V |
125 Cel |
FAST RECOVERY |
-40 Cel |
TIN OVER NICKEL |
O-MUPM-D1 |
CATHODE |
FREE WHEELING DIODE |
1 |
DO-203AB |
870 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
800 A |
1.86 V |
15000 uA |
1 |
DISK BUTTON |
2000 V |
190 Cel |
HIGH VOLTAGE HIGH POWER |
-40 Cel |
O-CEDB-N2 |
1 |
DO-200AA |
8640 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
HIGH CURRENT CABLE |
1 |
NO |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
600 A |
1.31 V |
35000 uA |
1 |
POST/STUD MOUNT |
1600 V |
180 Cel |
HIGH VOLTAGE HIGH POWER |
-40 Cel |
O-CUPM-H1 |
CATHODE |
1 |
13600 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
2 us |
1 |
LONG FORM |
800 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-201AD |
125 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Sensitron Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 |
LONG FORM |
800 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-201AD |
200 A |
SILICON |
|||||||||||||||||||||||||||||
|
Formosa Microsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.1 V |
5 uA |
1 |
LONG FORM |
1000 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
125 A |
SILICON |
||||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 V |
5 uA |
1 |
LONG FORM |
1000 V |
150 Cel |
EFFICIENCY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY, LOW POWER LOSS |
1 |
DO-201AD |
125 A |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
1.2 V |
2 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
400 V |
175 Cel |
POWER |
-65 Cel |
O-LELF-R2 |
ISOLATED |
HIGH RELIABILITY |
1 |
100 A |
SILICON |
||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.3 A |
.005 us |
1 |
LONG FORM |
75 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
1 |
SILICON |
||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.52 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
HIGH POWER |
-55 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-204AR |
1900 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
|
International Rectifier |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
8 A |
.44 V |
SCHOTTKY |
15000 uA |
1 |
LONG FORM |
45 V |
175 Cel |
GENERAL PURPOSE |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AR |
2400 A |
40 |
260 |
SILICON |
||||||||||||||||||||||||||
Vishay Telefunken |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
LONG FORM |
O-LELF-R2 |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.03 A |
1 V |
SCHOTTKY |
.2 uA |
1 |
60 V |
LONG FORM |
Rectifier Diodes |
60 V |
125 Cel |
GENERAL PURPOSE |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT, BOX:10000 |
1 |
.5 A |
e2 |
SILICON |
||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.4 A |
.05 us |
AVALANCHE |
1 |
LONG FORM |
90 V |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.45 W |
1 |
DO-35 |
SILICON |
|||||||||||||||||||||||||||||||||
Vishay Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.75 A |
2 us |
1 |
LONG FORM |
1250 V |
175 Cel |
HIGH VOLTAGE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-204AC |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||||||
Vishay Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.75 A |
2 us |
1 |
LONG FORM |
1250 V |
175 Cel |
HIGH VOLTAGE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-204AC |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1.05 A |
2.65 V |
.03 us |
AVALANCHE |
10 uA |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
FAST SOFT RECOVERY |
O-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
45 A |
225 |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.5 A |
1.2 V |
1.5 us |
5 uA |
1 |
400 V |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-213AA |
10 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.05 us |
1 |
LONG FORM |
100 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW POWER LOSS, HIGH RELIABILITY |
1 |
DO-201AD |
200 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
2 us |
1 |
LONG FORM |
400 V |
175 Cel |
-65 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-204AL |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
MIL-19500/228 |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
.975 V |
.05 us |
25 uA |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
150 V |
175 Cel |
EFFICIENCY |
-65 Cel |
TIN LEAD |
O-MUPM-D1 |
CATHODE |
Qualified |
1 |
DO-203AB |
800 A |
e0 |
SILICON |
MIL-19500/550B |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
.975 V |
.05 us |
25 uA |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
150 V |
175 Cel |
EFFICIENCY |
-65 Cel |
TIN LEAD |
O-MUPM-D1 |
ANODE |
Qualified |
1 |
DO-203AB |
800 A |
e0 |
SILICON |
MIL-19500/550B |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.69 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-201AD |
150 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Sensitron Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.69 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-201AD |
180 A |
SILICON |
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|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
1.35 V |
.075 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
ULTRA FAST RECOVERY POWER |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-41 |
35 A |
e3 |
SILICON |
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|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1 V |
.025 us |
10 uA |
1 |
LONG FORM |
100 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
150 A |
e3 |
10 |
260 |
SILICON |
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|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1 V |
.025 us |
10 uA |
1 |
LONG FORM |
100 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
150 A |
e3 |
10 |
260 |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3.5 A |
1.1 V |
.02 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT, FREE WHEELING DIODE |
1 |
DO-201AD |
90 A |
e3 |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.