Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Transys Electronics |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
25 A |
1.3 V |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
1200 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
O-MUPM-D1 |
CATHODE |
Not Qualified |
1 |
DO-203AA |
373 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
25 A |
1.3 V |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
1200 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
O-MUPM-D1 |
CATHODE |
Not Qualified |
1 |
DO-203AA |
373 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
30 A |
.55 V |
SCHOTTKY |
500 uA |
1 |
LONG FORM |
45 V |
200 Cel |
GENERAL PURPOSE |
-55 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
380 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
IEC-61215 |
|||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
30 A |
.52 V |
100 uA |
1 |
LONG FORM |
45 V |
150 Cel |
EFFICIENCY |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
1 |
275 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.52 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
HIGH POWER |
-55 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-204AR |
1900 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.95 V |
10 uA |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
125 Cel |
GENERAL PURPOSE |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
400 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
1 |
POST/STUD MOUNT |
1600 V |
GENERAL PURPOSE |
TIN COPPER |
O-MUPM-D1 |
CATHODE |
Not Qualified |
1 |
DO-203AB |
1250 A |
e2 |
SILICON |
CECC50009-027 |
||||||||||||||||||||||||||||||
|
Digitron Semiconductors |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
1.46 V |
4500 uA |
1 |
POST/STUD MOUNT |
1600 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
O-MUPM-D1 |
CATHODE |
1 |
DO-5 |
1250 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
Temic Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.003 uA |
1 |
LONG FORM |
200 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
2 A |
SILICON |
||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
70 V |
175 Cel |
Tin/Silver (Sn97.5Ag2.5) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-213AA |
2 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
200 Cel |
TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
2 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.15 A |
.25 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
125 Cel |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
ISOLATED |
Not Qualified |
.15 W |
1 |
DO-35 |
750 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
250 V |
175 Cel |
TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.2 A |
1 |
LONG FORM |
250 V |
175 Cel |
-55 Cel |
TIN |
O-XALF-W2 |
ISOLATED |
LOW POWER LOSS |
1 |
DO-35 |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||||||
National Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.2 A |
1.25 V |
.05 us |
.1 uA |
1 |
LONG FORM |
200 V |
175 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
4 A |
SILICON |
||||||||||||||||||||||||||||||
|
Fairchild Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
250 V |
175 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
1.2 V |
10 uA |
1 |
800 V |
LONG FORM |
Rectifier Diodes |
800 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-213AB |
30 A |
e3 |
40 |
250 |
SILICON |
|||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.7 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
60 V |
150 Cel |
-55 Cel |
MATTE TIN |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
LOW POWER LOSS, FREE WHEELING DIODE |
1 |
DO-213AB |
30 A |
e3 |
30 |
250 |
SILICON |
|||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
2.3 A |
.03 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
FAST SOFT RECOVERY |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
45 A |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
2.3 A |
.03 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
FAST SOFT RECOVERY |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
45 A |
SILICON |
|||||||||||||||||||||||||||||||||
|
Fagor Electronica S Coop |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2.3 A |
2.65 V |
.03 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
175 Cel |
VERY FAST SOFT RECOVERY |
TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
45 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1.05 A |
2.65 V |
.03 us |
AVALANCHE |
10 uA |
1 |
LONG FORM |
600 V |
175 Cel |
FAST SOFT RECOVERY |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
45 A |
SILICON |
||||||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
400 V |
150 Cel |
-55 Cel |
O-PELF-R2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
30 A |
SILICON |
UL RECOGNIZED |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.075 A |
SCHOTTKY |
1 |
LONG FORM |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-35 |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.5 A |
1.35 V |
.05 us |
5 uA |
1 |
400 V |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-213AA |
10 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.95 V |
.035 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
SUPER FAST RECOVERY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
DO-201AD |
150 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.95 V |
.035 us |
1 uA |
1 |
LONG FORM |
200 V |
150 Cel |
SUPER FAST RECOVERY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
150 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.25 A |
3 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
4000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
15 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.25 A |
2 us |
1 |
LONG FORM |
4000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
15 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.25 A |
3 V |
2 us |
5 uA |
1 |
4000 V |
LONG FORM |
4000 V |
175 Cel |
HIGH VOLTAGE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
15 A |
e3 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.25 A |
3 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
4000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
15 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.25 A |
3 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
4000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
15 A |
e3 |
SILICON |
||||||||||||||||||||||||||
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.7 V |
.075 us |
5 uA |
1 |
1000 V |
LONG FORM |
1000 V |
125 Cel |
EFFICIENCY |
-55 Cel |
TIN LEAD |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY |
1 |
DO-41 |
1000 V |
30 A |
e0 |
30 |
240 |
SILICON |
|||||||||||||||||||||||
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.05 us |
1 |
LONG FORM |
100 V |
EFFICIENCY |
TIN LEAD |
O-PALF-W2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-201AD |
200 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.15 us |
1 |
LONG FORM |
FAST RECOVERY POWER |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
80 A |
e0 |
SILICON |
MIL-19500/411L |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
1 V |
.004 us |
.1 uA |
1 |
LONG FORM |
75 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-XELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
2.5 A |
e0 |
SILICON |
MIL-19500/609D |
|||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
2 us |
1 |
LONG FORM |
200 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-PALF-W2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-204AL |
e0 |
SILICON |
MIL-19500/228 |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
1 A |
1.6 V |
.15 us |
AVALANCHE |
.5 uA |
1 |
LONG FORM |
200 V |
175 Cel |
FAST RECOVERY |
-65 Cel |
O-XALF-W2 |
ISOLATED |
HIGH RELIABILITY |
1 |
220 V |
25 A |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
3 A |
SCHOTTKY |
1 |
LONG FORM |
40 V |
GENERAL PURPOSE |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
80 A |
e0 |
SILICON |
MIL-19500/620E |
||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.15 us |
1 |
LONG FORM |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/429J |
||||||||||||||||||||||||||||||||||
|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.35 A |
.6 V |
.01 us |
SCHOTTKY |
5 uA |
1 |
20 V |
LONG FORM |
30 V |
125 Cel |
GENERAL PURPOSE |
-55 Cel |
O-LELF-R2 |
1 |
ISOLATED |
.4 W |
1 |
15 A |
SILICON |
||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
100 V |
150 Cel |
-65 Cel |
O-PELF-R2 |
ISOLATED |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.15 A |
.004 us |
1 |
LONG FORM |
75 V |
MATTE TIN |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
e3 |
SILICON |
|||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.4 V |
.5 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.2 W |
1 |
DO-213AA |
4 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Sensitron Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
SCHOTTKY |
1 |
LONG FORM |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-201AD |
96 A |
SILICON |
|||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.6 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
60 V |
150 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-201AD |
80 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.95 V |
SCHOTTKY |
500 uA |
1 |
LONG FORM |
200 V |
150 Cel |
HIGH VOLTAGE POWER |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
LOW NOISE |
1 |
DO-27 |
100 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.6 V |
.01 us |
SCHOTTKY |
5 uA |
1 |
10 V |
LONG FORM |
Rectifier Diodes |
20 V |
125 Cel |
GENERAL PURPOSE |
Tin/Silver (Sn/Ag) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.4 W |
LOW LEAKAGE CURRENT |
1 |
20 V |
15 A |
e2 |
40 |
260 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.