Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.6 V |
.01 us |
SCHOTTKY |
5 uA |
1 |
10 V |
LONG FORM |
Rectifier Diodes |
20 V |
125 Cel |
GENERAL PURPOSE |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.4 W |
LOW LEAKAGE CURRENT |
1 |
20 V |
15 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||
|
Sangdest Microelectronics (Nanjing) |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.1 us |
1 |
LONG FORM |
200 V |
EFFICIENCY |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW POWER LOSS |
1 |
DO-201AD |
150 A |
SILICON |
||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.3 V |
.3 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
125 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
100 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.35 V |
.045 us |
5 uA |
1 |
LONG FORM |
400 V |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
35 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.35 V |
.045 us |
5 uA |
1 |
LONG FORM |
400 V |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
35 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.35 V |
.045 us |
5 uA |
1 |
LONG FORM |
400 V |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
35 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.35 V |
.045 us |
5 uA |
1 |
LONG FORM |
400 V |
150 Cel |
-65 Cel |
Matte Tin (Sn) |
O-PALF-W2 |
1 |
ISOLATED |
1 |
DO-41 |
35 A |
e3 |
5 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1 V |
.025 us |
10 uA |
1 |
LONG FORM |
150 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
150 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
.71 V |
.035 us |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
ULTRA FAST RECOVERY POWER |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-201AD |
125 A |
e3 |
SILICON |
|||||||||||||||||||||||||
Nte Electronics |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
20 A |
1.5 V |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
100 V |
175 Cel |
POWER |
O-MUPM-D1 |
ANODE |
Not Qualified |
1 |
DO-4 |
425 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Sangdest Microelectronics (Nanjing) |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
1 |
LONG FORM |
1000 V |
GENERAL PURPOSE |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
HIGH RELIABILTY |
1 |
400 A |
SILICON |
||||||||||||||||||||||||||||||||
Hy Electronic |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
1.1 V |
10 uA |
1 |
LONG FORM |
1000 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
250 A |
SILICON |
||||||||||||||||||||||||||||||||
|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.5 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
-50 Cel |
Tin/Silver/Copper - with Nickel barrier |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-213AA |
30 A |
5 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.3 us |
1 |
LONG FORM |
2000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
SNUBBER DIODE |
1 |
DO-204AL |
e3 |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.5 A |
1.8 V |
.3 us |
1 |
LONG FORM |
Rectifier Diodes |
2000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-204AL |
20 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.5 A |
1.8 V |
.3 us |
1 |
LONG FORM |
Rectifier Diodes |
2000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-204AL |
20 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.62 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW POWER LOSS |
1 |
DO-204AL |
50 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Comchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.85 V |
SCHOTTKY |
500 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
DO-201AD |
125 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
IEC-61000-4-2 |
||||||||||||||||||||||||
|
Sangdest Microelectronics (Nanjing) |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
1.1 V |
SCHOTTKY |
1000 uA |
1 |
200 V |
LONG FORM |
200 V |
150 Cel |
EFFICIENCY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-201AD |
120 A |
SILICON |
|||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
10 A |
.55 V |
450 uA |
1 |
LONG FORM |
Rectifier Diodes |
45 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
BRIGHT TIN |
O-PALF-W2 |
1 |
ISOLATED |
1 |
DO-201AD |
180 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Semikron International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3.3 A |
1.2 V |
SCHOTTKY |
4 uA |
1 |
LONG FORM |
Rectifier Diodes |
1600 V |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
TIN SILVER |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LEAKAGE CURRENT IS TYPICAL |
1 |
150 A |
e2 |
SILICON |
|||||||||||||||||||||||||
|
Semikron International |
RECTIFIER DIODE |
UPPER |
WIRE |
1 |
NO |
ROUND |
METAL |
SINGLE |
3.7 A |
1.2 V |
AVALANCHE |
4 uA |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
888 V |
150 Cel |
HIGH VOLTAGE |
-40 Cel |
TIN SILVER |
O-MUPM-W1 |
ANODE |
Not Qualified |
LEAKAGE CURRENT IS TYPICAL |
1 |
160 A |
e2 |
SILICON |
|||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.61 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
60 V |
150 Cel |
POWER |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
AVALANCHE CAPABILITY |
1 |
DO-201AD |
100 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
1.05 V |
.095 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
HIGH VOLTAGE ULTRA FAST RECOVERY |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
110 A |
e3 |
SILICON |
||||||||||||||||||||||||||
IXYS Corporation |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
1.5 V |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
200 V |
175 Cel |
GENERAL PURPOSE |
O-MUPM-D1 |
ANODE |
Not Qualified |
1 |
750 A |
SILICON |
||||||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.1 A |
1 V |
SCHOTTKY |
.1 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
125 Cel |
-65 Cel |
Matte Tin (Sn) - annealed |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.1 W |
1 |
.75 A |
e3 |
30 |
235 |
SILICON |
|||||||||||||||||||||||
Rugao Dachang Electronic |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.15 us |
1 |
LONG FORM |
600 V |
175 Cel |
-65 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-204AL |
SILICON |
||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
1.3 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-15 |
60 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.7 V |
.075 us |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
150 Cel |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.7 V |
.075 us |
5 uA |
1 |
LONG FORM |
800 V |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.7 V |
.075 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
150 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
40 A |
1.3 V |
2500 uA |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
100 V |
200 Cel |
POWER |
-65 Cel |
TIN OVER NICKEL |
O-MUPM-D1 |
CATHODE |
LOW LEAKAGE CURRENT |
1 |
DO-203AB |
800 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
25 A |
1.3 V |
12000 uA |
1 |
POST/STUD MOUNT |
1200 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN OVER NICKEL |
O-MUPM-D1 |
CATHODE |
1 |
DO-203AA |
373 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
1.35 V |
9000 uA |
1 |
POST/STUD MOUNT |
1200 V |
180 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN OVER NICKEL |
O-MUPM-D1 |
ANODE |
1 |
DO-203AB |
1250 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
1.35 V |
9000 uA |
1 |
POST/STUD MOUNT |
1200 V |
180 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN OVER NICKEL |
O-MUPM-D1 |
ANODE |
1 |
DO-203AB |
1250 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
WIRE |
1 |
NO |
ROUND |
METAL |
SINGLE |
80 A |
1.4 V |
9000 uA |
1 |
POST/STUD MOUNT |
800 V |
180 Cel |
GENERAL PURPOSE |
-55 Cel |
O-MUPM-W1 |
ANODE |
1 |
DO-203AB |
1570 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
UPPER |
HIGH CURRENT CABLE |
1 |
NO |
ROUND |
METAL |
SINGLE |
735 A |
1.3 V |
15000 uA |
1 |
1500 V |
POST/STUD MOUNT |
1500 V |
190 Cel |
HIGH VOLTAGE |
-40 Cel |
O-MUPM-H1 |
ANODE |
1 |
10000 A |
SILICON |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.1 A |
.5 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
225 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
60 A |
1.3 V |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
50 V |
200 Cel |
HIGH POWER |
-65 Cel |
O-MUPM-D1 |
ANODE |
Not Qualified |
HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-203AB |
1050 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
16 A |
.6 V |
5 us |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
50 V |
200 Cel |
POWER |
-65 Cel |
TIN LEAD |
O-MUPM-D1 |
CATHODE |
Not Qualified |
1 |
DO-203AA |
200 A |
e0 |
SILICON |
|||||||||||||||||||||||||||
Frontier Electronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
175 Cel |
-65 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||||
Central Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
100 V |
Tin/Lead (Sn/Pb) |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
e0 |
SILICON |
||||||||||||||||||||||||||||||||||
|
Fairchild Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
100 V |
TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
3 W |
1 |
DO-41 |
e3 |
SILICON |
||||||||||||||||||||||||||||||||
|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1.5 us |
5 uA |
1 |
600 V |
LONG FORM |
600 V |
175 Cel |
GENERAL PURPOSE |
-50 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-204AC |
30 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
1000 V |
150 Cel |
-55 Cel |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY |
1 |
DO-41 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.2 V |
.3 us |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-41 |
30 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.2 V |
.2 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.2 V |
.3 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-41 |
30 A |
e3 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.