Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Spc Technology/ Multicomp |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
1 V |
10 uA |
1 |
LONG FORM |
400 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
400 A |
SILICON |
||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.9 V |
2.5 us |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
400 A |
e3 |
SILICON |
||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
100 A |
1 |
POST/STUD MOUNT |
200 V |
200 Cel |
POWER |
-65 Cel |
TIN LEAD |
O-MUPM-D1 |
ANODE |
Not Qualified |
1 |
DO-203AB |
1800 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.5 A |
1.3 V |
.25 us |
5 uA |
1 |
800 V |
LONG FORM |
Rectifier Diodes |
800 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-213AA |
10 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.5 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
-65 Cel |
Matte Tin (Sn) |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-213AB |
30 A |
e3 |
40 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
1.3 V |
.25 us |
5 uA |
1 |
600 V |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-204AC |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.7 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
60 V |
150 Cel |
-65 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW POWER LOSS, FREE WHEELING DIODE, HIGH SURGE CAPABILITY |
1 |
DO-41 |
40 A |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
.5 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AC |
60 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.74 V |
SCHOTTKY |
.5 uA |
1 |
60 V |
LONG FORM |
Rectifier Diodes |
60 V |
150 Cel |
EFFICIENCY |
-65 Cel |
BRIGHT TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-201AD |
80 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
10 A |
.41 V |
1 |
LONG FORM |
Rectifier Diodes |
45 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
BRIGHT TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-201AD |
200 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.65 V |
SCHOTTKY |
50 uA |
1 |
LONG FORM |
100 V |
150 Cel |
EFFICIENCY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
LOW POWER LOSS |
1 |
DO-201AD |
110 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Semikron International |
RECTIFIER DIODE |
UPPER |
HIGH CURRENT CABLE |
1 |
NO |
ROUND |
METAL |
SINGLE |
320 A |
1.4 V |
2000 uA |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
1200 V |
180 Cel |
POWER |
-40 Cel |
TIN SILVER |
O-MUPM-H1 |
ANODE |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-205AB |
5000 A |
e2 |
SILICON |
|||||||||||||||||||||||||
|
Semikron International |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
25 A |
1.95 V |
AVALANCHE |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
5000 V |
160 Cel |
HIGH VOLTAGE |
-40 Cel |
O-MUPM-D1 |
Not Qualified |
FREE WHEELING DIODE |
1 |
450 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.7 V |
.075 us |
10 uA |
1 |
LONG FORM |
800 V |
EFFICIENCY |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-201AD |
100 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
25 A |
1.3 V |
12000 uA |
1 |
POST/STUD MOUNT |
1200 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN OVER NICKEL |
O-MUPM-D1 |
ANODE |
1 |
DO-203AA |
373 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
1.85 V |
.06 us |
100 uA |
1 |
POST/STUD MOUNT |
600 V |
125 Cel |
FAST RECOVERY |
-40 Cel |
TIN OVER NICKEL |
O-MUPM-D1 |
CATHODE |
FREE WHEELING DIODE |
1 |
DO-203AB |
870 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
85 A |
1.2 V |
9000 uA |
1 |
POST/STUD MOUNT |
200 V |
180 Cel |
GENERAL PURPOSE |
-65 Cel |
Tin (Sn) - with Nickel (Ni) barrier |
O-MUPM-D1 |
ANODE |
1 |
DO-203AB |
1800 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
910 A |
1.44 V |
15000 uA |
1 |
DISK BUTTON |
3000 V |
150 Cel |
HIGH VOLTAGE |
-40 Cel |
O-CEDB-N2 |
1 |
DO-200AB |
11000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1825 A |
2.23 V |
2 us |
75000 uA |
1 |
DISK BUTTON |
1800 V |
150 Cel |
HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY |
-40 Cel |
O-CEDB-N2 |
FREE WHEELING DIODE |
1 |
DO-200AC |
26180 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1650 A |
2.6 V |
3 us |
75000 uA |
1 |
DISK BUTTON |
1800 V |
150 Cel |
HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY |
-40 Cel |
O-CEDB-N2 |
FREE WHEELING DIODE |
1 |
DO-200AC |
23000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1825 A |
2.23 V |
2 us |
75000 uA |
1 |
DISK BUTTON |
2500 V |
150 Cel |
HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY |
-40 Cel |
O-CEDB-N2 |
FREE WHEELING DIODE |
1 |
DO-200AC |
26180 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1650 A |
2.6 V |
3 us |
75000 uA |
1 |
DISK BUTTON |
2500 V |
150 Cel |
HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY |
-40 Cel |
O-CEDB-N2 |
FREE WHEELING DIODE |
1 |
DO-200AC |
23000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6.5 A |
.58 V |
SCHOTTKY |
1200 uA |
1 |
LONG FORM |
45 V |
150 Cel |
EFFICIENCY |
-40 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
LOW POWER LOSS |
1 |
250 A |
e3 |
SILICON |
IEC-61000-4-2 |
||||||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
2624 A |
27 us |
1 |
DISK BUTTON |
2500 V |
GENERAL PURPOSE |
O-CEDB-N2 |
Not Qualified |
1 |
30800 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
1.9 V |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
1000 V |
180 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN OVER NICKEL |
O-MUPM-D1 |
CATHODE |
Not Qualified |
1 |
DO-203AB |
1250 A |
e3 |
SILICON |
CECC50009-027 |
||||||||||||||||||||||||||
|
Digitron Semiconductors |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
1.35 V |
9000 uA |
1 |
POST/STUD MOUNT |
1000 V |
180 Cel |
GENERAL PURPOSE |
-65 Cel |
O-MUPM-D1 |
CATHODE |
1 |
DO-5 |
1250 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
1 |
POST/STUD MOUNT |
1000 V |
180 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN COPPER |
O-MUPM-D1 |
CATHODE |
Not Qualified |
1 |
DO-203AB |
1250 A |
e2 |
SILICON |
CECC50009-027 |
||||||||||||||||||||||||||||
Multicomp Pro |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.25 us |
1 |
LONG FORM |
1000 V |
150 Cel |
-50 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-41 |
SILICON |
||||||||||||||||||||||||||||||||||
|
Fagor Electronica S Coop |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2.3 A |
2.65 V |
.075 us |
AVALANCHE |
1 |
LONG FORM |
1000 V |
175 Cel |
VERY FAST SOFT RECOVERY |
TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
45 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
1.25 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
150 A |
e3 |
SILICON |
||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.125 A |
.004 us |
1 |
LONG FORM |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-34 |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.3 A |
1 V |
.004 us |
100 uA |
1 |
50 V |
LONG FORM |
Rectifier Diodes |
50 V |
175 Cel |
FAST RECOVERY |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
4 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||
|
Vishay Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.3 A |
.004 us |
1 |
LONG FORM |
50 V |
175 Cel |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-213AA |
e2 |
SILICON |
|||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1.28 V |
.05 us |
10 uA |
1 |
600 V |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
EFFICIENCY |
-55 Cel |
BRIGHT TIN |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
110 A |
e3 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
Vishay Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.5 us |
1 |
LONG FORM |
1000 V |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3.5 A |
1.1 V |
.02 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT, FREE WHEELING DIODE |
1 |
DO-201AD |
90 A |
e3 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 A |
.05 us |
LONG FORM |
ULTRA FAST RECOVERY |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
70 A |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.58 V |
SCHOTTKY |
1200 uA |
1 |
LONG FORM |
45 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
250 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
1.2 V |
10 uA |
1 |
1600 V |
LONG FORM |
Rectifier Diodes |
1600 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-213AB |
30 A |
e3 |
30 |
250 |
SILICON |
|||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.9 V |
2.5 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
400 A |
e3 |
SILICON |
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|
IXYS Corporation |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
25 A |
1.36 V |
AVALANCHE |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
1600 V |
180 Cel |
GENERAL PURPOSE |
O-MUPM-D1 |
ANODE |
Not Qualified |
1 |
DO-203AA |
370 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.9 V |
2.5 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
400 A |
e3 |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
40 A |
1.5 V |
4500 uA |
1 |
POST/STUD MOUNT |
1600 V |
160 Cel |
GENERAL PURPOSE |
-65 Cel |
O-MUPM-D1 |
CATHODE |
1 |
DO-203AB |
595 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
85 A |
1.2 V |
9000 uA |
1 |
POST/STUD MOUNT |
1200 V |
180 Cel |
GENERAL PURPOSE |
-65 Cel |
Tin (Sn) - with Nickel (Ni) barrier |
O-MUPM-D1 |
CATHODE |
1 |
DO-203AB |
1800 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
.8 V |
.03 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
ULTRA FAST RECOVERY |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-15 |
60 A |
e3 |
SILICON |
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|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.25 A |
1 V |
1.5 us |
1 |
LONG FORM |
Rectifier Diodes |
125 V |
175 Cel |
Tin (Sn) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.4 W |
LOW LEAKAGE CURRENT |
1 |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
2 us |
1 |
LONG FORM |
200 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-PALF-W2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-204AL |
e0 |
SILICON |
MIL-19500/427 |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.