Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.4 A |
1 |
LONG FORM |
225 V |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
METALLURGICALLY BONDED |
1 |
DO-35 |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.08 us |
AVALANCHE |
1 |
LONG FORM |
1000 V |
150 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
e0 |
SILICON |
||||||||||||||||||||||||||||||
|
Kyocera |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.7 V |
.035 us |
20 uA |
1 |
LONG FORM |
600 V |
150 Cel |
FAST SOFT RECOVERY |
-40 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-201AD |
45 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.2 V |
.25 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY, LOW POWER LOSS |
1 |
DO-204AL |
30 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
SCHOTTKY |
1 |
LONG FORM |
125 Cel |
-65 Cel |
O-XALF-W2 |
ISOLATED |
Not Qualified |
.2 W |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.2 A |
.33 V |
.005 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
ISOLATED |
Not Qualified |
.2 W |
1 |
DO-35 |
4 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.2 A |
.33 V |
.005 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
ISOLATED |
Not Qualified |
.2 W |
1 |
DO-35 |
4 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
250 V |
175 Cel |
TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Fairchild Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
250 V |
175 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
e3 |
SILICON |
||||||||||||||||||||||||||||
National Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.2 A |
1.25 V |
.05 us |
.1 uA |
1 |
LONG FORM |
200 V |
175 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
4 A |
SILICON |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.25 A |
1 V |
.05 us |
15 uA |
1 |
200 V |
LONG FORM |
Rectifier Diodes |
250 V |
175 Cel |
HIGH VOLTAGE |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
250 V |
1 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
3 us |
AVALANCHE |
1 |
LONG FORM |
1000 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
IEC 134 |
||||||||||||||||||||||||||||||||
Frontier Electronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
1.6 V |
.3 us |
5 uA |
1 |
LONG FORM |
1000 V |
150 Cel |
FAST RECOVERY |
-65 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
SILICON |
||||||||||||||||||||||||||||||
Vishay Telefunken |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
3 A |
6 us |
1 |
LONG FORM |
1000 V |
GENERAL PURPOSE |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
100 A |
SILICON |
||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.36 A |
2 us |
1 |
LONG FORM |
1600 V |
175 Cel |
-65 Cel |
Matte Tin (Sn) |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
15 A |
e3 |
SILICON |
|||||||||||||||||||||||||||||
Continental Device India |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
1 V |
.004 us |
20 uA |
1 |
75 V |
LONG FORM |
80 V |
200 Cel |
GENERAL PURPOSE |
-65 Cel |
O-LELF-R2 |
ISOLATED |
.5 W |
TR, 7 INCH: 2500 |
1 |
75 V |
.5 A |
SILICON |
TS-16949 |
||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.033 A |
SCHOTTKY |
1 |
LONG FORM |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AA |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
Eupec & Kg |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 |
LONG FORM |
400 V |
150 Cel |
GENERAL PURPOSE |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
160 A |
SILICON |
||||||||||||||||||||||||||||||||||
Eupec & Kg |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 |
LONG FORM |
800 V |
150 Cel |
GENERAL PURPOSE |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
160 A |
SILICON |
||||||||||||||||||||||||||||||||||
Eupec & Kg |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
1 |
LONG FORM |
400 V |
150 Cel |
GENERAL PURPOSE |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
100 A |
SILICON |
||||||||||||||||||||||||||||||||||
|
IXYS Corporation |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
110 A |
1.4 V |
AVALANCHE |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
1200 V |
180 Cel |
GENERAL PURPOSE |
O-MUPM-D1 |
ANODE |
Not Qualified |
1 |
DO-203AB |
1400 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
IXYS Corporation |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
49 A |
AVALANCHE |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
1800 V |
180 Cel |
GENERAL PURPOSE |
O-MUPM-D1 |
CATHODE |
Not Qualified |
1 |
DO-203AB |
650 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
2 V |
.035 us |
1 uA |
1 |
LONG FORM |
700 V |
150 Cel |
SUPER FAST RECOVERY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
125 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
2 V |
.035 us |
1 uA |
1 |
LONG FORM |
700 V |
150 Cel |
SUPER FAST RECOVERY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
125 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
2 V |
.035 us |
1 uA |
1 |
LONG FORM |
700 V |
150 Cel |
SUPER FAST RECOVERY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
125 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
2 V |
.035 us |
1 uA |
1 |
LONG FORM |
700 V |
150 Cel |
SUPER FAST RECOVERY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
125 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
2 V |
.035 us |
1 uA |
1 |
LONG FORM |
700 V |
150 Cel |
SUPER FAST RECOVERY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
125 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.7 V |
.035 us |
1 uA |
1 |
LONG FORM |
600 V |
150 Cel |
SUPER FAST RECOVERY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
125 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.15 A |
1.05 V |
1 |
LONG FORM |
Rectifier Diodes |
15 V |
175 Cel |
MATTE TIN |
O-XALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
1 |
DO-35 |
e3 |
SILICON |
|||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.15 us |
1 |
LONG FORM |
200 V |
150 Cel |
-55 Cel |
TIN |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY, LOW POWER LOSS |
1 |
DO-41 |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
1.2 V |
10 uA |
1 |
1000 V |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-213AB |
30 A |
e3 |
30 |
250 |
SILICON |
|||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
1 A |
.25 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
O-XALF-W2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
SILICON |
MIL-19500/359F |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.15 us |
1 |
LONG FORM |
FAST RECOVERY POWER |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
80 A |
SILICON |
MIL-19500/411L |
||||||||||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
2 us |
1 |
LONG FORM |
400 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-PALF-W2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-204AL |
e0 |
SILICON |
MIL-19500/427 |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
.0045 us |
1 |
LONG FORM |
125 V |
TIN LEAD |
O-XELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
e0 |
SILICON |
MIL-19500/578E |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 A |
2 us |
LONG FORM |
GENERAL PURPOSE |
Tin/Lead (Sn/Pb) |
O-LALF-W2 |
ISOLATED |
Qualified |
1 |
100 A |
e0 |
SILICON |
MIL |
||||||||||||||||||||||||||||||||||
Semtech |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.7 V |
SCHOTTKY |
100 uA |
1 |
40 V |
LONG FORM |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
O-LELF-R2 |
ISOLATED |
HIGH RELIABILITY |
1 |
80 A |
SILICON |
MIL-19500 |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
2 us |
1 |
LONG FORM |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
e0 |
SILICON |
MIL-19500/427K |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
.025 us |
AVALANCHE |
1 |
LONG FORM |
100 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Qualified |
HIGH RELIABILITY |
1 |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
1.1 V |
.0045 us |
.5 uA |
1 |
LONG FORM |
125 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-XELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
2.5 A |
e0 |
SILICON |
MIL-19500/578E |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
1 |
LONG FORM |
POWER |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
100 A |
e0 |
SILICON |
MIL-19500/420G |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
3 A |
.03 us |
1 |
LONG FORM |
ULTRA FAST RECOVERY POWER |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
35 A |
e0 |
SILICON |
MIL-19500/503B |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
.975 V |
.05 us |
25 uA |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
150 V |
175 Cel |
EFFICIENCY |
-65 Cel |
TIN LEAD |
O-MUPM-D1 |
CATHODE |
Qualified |
1 |
DO-203AB |
800 A |
e0 |
SILICON |
MIL-19500/550B |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.3 A |
1 V |
.004 us |
100 uA |
1 |
50 V |
LONG FORM |
Rectifier Diodes |
50 V |
175 Cel |
FAST RECOVERY |
-55 Cel |
Tin/Silver (Sn97.5Ag2.5) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
4 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
.004 us |
1 |
LONG FORM |
100 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
.5 W |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
Microsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.81 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
-55 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
75 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1.28 V |
.075 us |
10 uA |
1 |
600 V |
LONG FORM |
600 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-201AD |
150 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.9 V |
2.5 us |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
400 A |
e3 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.