Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.2 A |
.24 V |
SCHOTTKY |
2 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
150 Cel |
TIN |
R-PBCC-N3 |
1 |
Not Qualified |
.25 W |
.6 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
NO LEAD |
5 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30 A |
.96 V |
SCHOTTKY |
100 uA |
1 |
100 V |
SMALL OUTLINE |
100 V |
150 Cel |
EFFICIENCY |
Matte Tin (Sn) - annealed |
R-PDSO-N5 |
1 |
CATHODE |
Not Qualified |
1 |
200 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
NO LEAD |
5 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.84 V |
SCHOTTKY |
6 uA |
1 |
SMALL OUTLINE |
100 V |
150 Cel |
EFFICIENCY |
Matte Tin (Sn) - annealed |
R-PDSO-N5 |
1 |
CATHODE |
1 |
250 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.75 A |
.715 V |
.004 us |
2 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
TIN |
R-PDSO-N3 |
1 |
CATHODE |
Not Qualified |
.25 W |
1 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.215 A |
.715 V |
.004 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-N2 |
1 |
.25 W |
1 |
.5 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.38 V |
.005 us |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
40 V |
125 Cel |
-55 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
Not Qualified |
.25 W |
HIGH RELIABILITY |
1 |
.6 A |
e4 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
NO LEAD |
5 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
8 A |
.9 V |
SCHOTTKY |
4.5 uA |
1 |
100 V |
SMALL OUTLINE |
100 V |
175 Cel |
HIGH VOLTAGE FAST RECOVERY POWER |
Matte Tin (Sn) |
R-PDSO-N5 |
1 |
CATHODE |
FREE WHEELING DIODE |
1 |
100 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.12 A |
.38 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
40 V |
150 Cel |
TIN |
R-PBCC-N2 |
1 |
Not Qualified |
1 |
.2 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.24 V |
.005 us |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
125 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
Not Qualified |
.25 W |
HIGH RELIABILITY |
1 |
.6 A |
e4 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.5 A |
.46 V |
SCHOTTKY |
75 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
-40 Cel |
NICKEL GOLD |
R-XBCC-N2 |
1 |
Not Qualified |
1.3 W |
LOW LEAKAGE CURRENT |
1 |
40 V |
10 A |
e4 |
30 |
260 |
SILICON |
|||||||||||||||||||||
|
Bourns |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.15 A |
1 V |
.004 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
125 Cel |
-40 Cel |
MATTE TIN |
R-PDSO-N2 |
1 |
Not Qualified |
.15 W |
1 |
.8 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
2 A |
.42 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
150 Cel |
EFFICIENCY |
R-XBCC-N2 |
1 |
ANODE |
Not Qualified |
1.56 W |
LOW LEAKAGE CURRENT |
1 |
28 A |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
Dionics-usa |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.15 A |
1 V |
.004 us |
5 uA |
1 |
UNCASED CHIP |
Rectifier Diodes |
100 V |
150 Cel |
R-XUUC-N1 |
Not Qualified |
1 |
2 A |
SILICON |
||||||||||||||||||||||||||||||||
|
Bourns |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.5 us |
5 uA |
1 |
1000 V |
SMALL OUTLINE |
1000 V |
175 Cel |
EFFICIENCY |
-65 Cel |
TIN |
R-PDSO-N2 |
1 |
LOW POWER LOSS |
1 |
30 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, 2 ELEMENTS |
.17 A |
1.25 V |
.004 us |
.5 uA |
2 |
80 V |
SMALL OUTLINE |
90 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-N3 |
1 |
.305 W |
4 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 5 ELEMENTS |
.3 A |
.715 V |
.004 us |
50 uA |
5 |
75 V |
CHIP CARRIER |
Signal Diodes |
75 V |
150 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N6 |
1 |
Not Qualified |
.5 W |
e4 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.31 A |
.004 us |
2 |
SMALL OUTLINE |
90 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-N3 |
1 |
ANODE |
.325 W |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.15 A |
1 V |
.004 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
75 V |
125 Cel |
-40 Cel |
GOLD |
R-PDSO-N2 |
Not Qualified |
.15 W |
HIGH RELIABILITY |
1 |
1 A |
e4 |
SILICON |
|||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.125 A |
.72 V |
.004 us |
1 |
CHIP CARRIER |
Rectifier Diodes |
80 V |
150 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
Not Qualified |
.25 W |
HIGH RELIABILITY |
1 |
1 A |
e4 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.215 A |
1.25 V |
3 us |
.005 uA |
1 |
75 V |
CHIP CARRIER |
Rectifier Diodes |
85 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
.3 W |
LOW LEAKAGE CURRENT |
1 |
85 V |
.5 A |
e4 |
30 |
260 |
SILICON |
|||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.03 A |
.37 V |
SCHOTTKY |
.5 uA |
1 |
CHIP CARRIER |
40 V |
125 Cel |
MATTE TIN |
R-PBCC-N2 |
1 |
.1 W |
HIGH RELIABILITY |
1 |
.2 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.4 A |
1.1 V |
.05 us |
1 |
CHIP CARRIER |
Rectifier Diodes |
325 V |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
Not Qualified |
.4 W |
1 |
8 A |
e4 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1 A |
.42 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
40 V |
150 Cel |
R-XBCC-N2 |
1 |
ANODE |
Not Qualified |
1.47 W |
1 |
18 A |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
100 A |
2.05 V |
18 uA |
1 |
UNCASED CHIP |
1200 V |
175 Cel |
FAST SOFT RECOVERY |
-40 Cel |
R-XUUC-N1 |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
150 A |
1 |
UNCASED CHIP |
1700 V |
150 Cel |
FAST SOFT RECOVERY |
-55 Cel |
S-XUUC-N1 |
Not Qualified |
1 |
740 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
150 A |
1.9 V |
27 uA |
1 |
UNCASED CHIP |
600 V |
175 Cel |
FAST SOFT RECOVERY |
-40 Cel |
R-XUUC-N1 |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.1 A |
.4 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
150 Cel |
GOLD NICKEL |
R-XBCC-N2 |
1 |
Not Qualified |
.735 W |
1 |
4 A |
e4 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
NO LEAD |
5 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30 A |
.51 V |
SCHOTTKY |
750 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
EFFICIENCY |
Matte Tin (Sn) |
R-PDSO-N5 |
1 |
CATHODE |
AVALANCHE RATED |
1 |
250 A |
e3 |
NOT SPECIFIED |
260 |
SILICON |
||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.0031 us |
SCHOTTKY |
1 |
CHIP CARRIER |
40 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
.525 W |
1 |
30 |
260 |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
10 A |
1 |
UNCASED CHIP |
1200 V |
175 Cel |
FAST SOFT RECOVERY |
-40 Cel |
R-XUUC-N1 |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.5 A |
.36 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
150 Cel |
NICKEL GOLD |
R-XBCC-N2 |
1 |
Not Qualified |
1.3 W |
1 |
10 A |
e4 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.55 V |
SCHOTTKY |
150 uA |
1 |
CHIP CARRIER |
Rectifier Diodes |
40 V |
150 Cel |
EFFICIENCY |
R-PBCC-N2 |
1 |
ANODE |
.586 W |
LOW LEAKAGE CURRENT |
1 |
28 A |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.05 us |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
125 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
.25 W |
HIGH RELIABILITY |
1 |
e4 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.215 A |
.715 V |
.004 us |
1 |
CHIP CARRIER |
Rectifier Diodes |
100 V |
150 Cel |
-65 Cel |
TIN |
R-PBCC-N2 |
1 |
Not Qualified |
.25 W |
1 |
.5 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30 A |
.46 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
45 V |
175 Cel |
FAST RECOVERY POWER |
MATTE TIN |
R-PDSO-N3 |
1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE |
1 |
200 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
2 A |
.47 V |
.047 us |
SCHOTTKY |
2500 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
S-PDSO-N3 |
1 |
CATHODE |
.5 W |
1 |
17 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.715 V |
.004 us |
1 |
CHIP CARRIER |
Rectifier Diodes |
75 V |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
Not Qualified |
.25 W |
HIGH RELIABILITY |
1 |
1 A |
e4 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Comchip Technology |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.15 A |
1 V |
.004 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
125 Cel |
-40 Cel |
GOLD |
R-PDSO-N2 |
.15 W |
HIGH RELIABILITY |
1 |
4 A |
e4 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
.575 V |
.0055 us |
SCHOTTKY |
250 uA |
1 |
SMALL OUTLINE |
60 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
S-PDSO-N3 |
1 |
CATHODE |
.52 W |
FREE WHEELING DIODE |
1 |
18 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
KYOCERA AVX |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
40 V |
125 Cel |
-55 Cel |
R-PDSO-N2 |
LOW POWER LOSS |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
.535 V |
.006 us |
SCHOTTKY |
100 uA |
1 |
SMALL OUTLINE |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
S-PDSO-N3 |
1 |
CATHODE |
.52 W |
FREE WHEELING DIODE |
1 |
18 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
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|
Nexperia |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.003 us |
SCHOTTKY |
2 |
SMALL OUTLINE |
60 V |
150 Cel |
-55 Cel |
TIN |
S-PDSO-N3 |
1 |
CATHODE |
.5 W |
FREE WHEELING DIODE |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
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|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.3 A |
.625 V |
SCHOTTKY |
6 uA |
1 |
10 V |
CHIP CARRIER |
30 V |
105 Cel |
GENERAL PURPOSE |
-40 Cel |
R-XBCC-N2 |
.2 W |
1 |
4 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Nexperia |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.0024 us |
SCHOTTKY |
1 |
CHIP CARRIER |
60 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
.525 W |
1 |
30 |
260 |
SILICON |
IEC-60134 |
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|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
27 uA |
1 |
UNCASED CHIP |
1200 V |
175 Cel |
FAST SOFT RECOVERY |
-40 Cel |
S-XUUC-N1 |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.06 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
20 V |
150 Cel |
TIN |
R-PBCC-N2 |
1 |
Not Qualified |
1 |
3 A |
e3 |
30 |
260 |
SILICON |
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|
Comchip Technology |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.3 V |
SCHOTTKY |
10 uA |
1 |
10 V |
CHIP CARRIER |
35 V |
125 Cel |
GENERAL PURPOSE |
-40 Cel |
R-PBCC-N2 |
HIGH RELIABILITY |
1 |
3 A |
SILICON |
AEC-Q101 |
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|
Micro Commercial Components |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.56 V |
SCHOTTKY |
20 uA |
1 |
CHIP CARRIER |
30 V |
125 Cel |
MATTE TIN |
R-PBCC-N2 |
1 |
.1 W |
HIGH RELIABILITY |
1 |
.5 A |
e3 |
10 |
260 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.