Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1710 A |
4.2 V |
150000 uA |
1 |
4500 V |
DISK BUTTON |
4500 V |
140 Cel |
POWER |
0 Cel |
O-CEDB-N2 |
FREE WHEELING DIODE |
1 |
28000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
.2 A |
.005 us |
1 |
SMALL OUTLINE |
TIN LEAD |
R-CDSO-N3 |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/116L |
|||||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.2 A |
.005 us |
2 |
SMALL OUTLINE |
TIN LEAD |
R-CDSO-N3 |
Qualified |
e0 |
SILICON |
MIL-19500/116L |
||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
SINGLE |
NO LEAD |
4 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
8 A |
1.55 V |
SCHOTTKY |
80 uA |
1 |
650 V |
SMALL OUTLINE |
650 V |
175 Cel |
POWER |
-40 Cel |
S-PSSO-N4 |
CATHODE |
1 |
69 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
|||||||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
5092 A |
1 |
DISK BUTTON |
3200 V |
GENERAL PURPOSE |
O-CEDB-N2 |
Not Qualified |
1 |
63800 A |
SILICON |
|||||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.2 A |
.005 us |
2 |
SMALL OUTLINE |
TIN LEAD |
R-CDSO-N3 |
Qualified |
e0 |
SILICON |
MIL-19500/116L |
||||||||||||||||||||||||||||||||||||
Sensitron Semiconductor |
RECTIFIER DIODE |
UPPER |
NO LEAD |
2 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
1 A |
1.05 V |
.075 us |
1 |
UNCASED CHIP |
Rectifier Diodes |
600 V |
175 Cel |
-65 Cel |
TIN LEAD |
S-XUUC-N2 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE |
1 |
35 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.44 V |
.004 us |
SCHOTTKY |
2000 uA |
2 |
SMALL OUTLINE |
30 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
S-PDSO-N3 |
1 |
CATHODE |
.5 W |
FREE WHEELING DIODE |
1 |
9 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1650 A |
2.6 V |
3 us |
75000 uA |
1 |
DISK BUTTON |
3000 V |
150 Cel |
HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY |
-40 Cel |
O-CEDB-N2 |
FREE WHEELING DIODE |
1 |
DO-200AC |
23000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1460 A |
4.2 V |
100000 uA |
1 |
4500 V |
DISK BUTTON |
4500 V |
140 Cel |
POWER |
0 Cel |
O-CEDB-N2 |
FREE WHEELING DIODE |
1 |
23000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
2380 A |
2.5 V |
150000 uA |
1 |
4500 V |
DISK BUTTON |
4500 V |
140 Cel |
POWER |
0 Cel |
O-CEDB-N2 |
FREE WHEELING DIODE |
1 |
40000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1220 A |
5.6 V |
100000 uA |
1 |
6500 V |
DISK BUTTON |
6500 V |
140 Cel |
POWER |
0 Cel |
O-CEDB-N2 |
FREE WHEELING DIODE |
1 |
16000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.0035 us |
SCHOTTKY |
2 |
SMALL OUTLINE |
40 V |
150 Cel |
-55 Cel |
Tin (Sn) |
S-PDSO-N3 |
1 |
CATHODE |
.5 W |
FREE WHEELING DIODE |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
3000 A |
1.41 V |
75000 uA |
1 |
DISK BUTTON |
2000 V |
180 Cel |
HIGH VOLTAGE |
-40 Cel |
O-CEDB-N2 |
1 |
DO-200AC |
32460 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
650 A |
2.08 V |
15000 uA |
1 |
DISK BUTTON |
400 V |
180 Cel |
HIGH VOLTAGE HIGH POWER |
-40 Cel |
O-CEDB-N2 |
1 |
DO-200AA |
6335 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
25 A |
1.18 V |
SCHOTTKY |
1 |
DISK BUTTON |
Rectifier Diodes |
1000 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN |
O-PEDB-N2 |
Not Qualified |
1 |
400 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Comchip Technology |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.46 V |
SCHOTTKY |
.3 uA |
1 |
10 V |
CHIP CARRIER |
30 V |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
Gold (Au) |
R-PBCC-N2 |
1 |
.5 A |
e4 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||
|
Comchip Technology |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
-40 Cel |
R-PBCC-N2 |
UNSPECIFIED |
1 |
.5 A |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||||||
Infineon Technologies |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
25 A |
.035 us |
1 |
CHIP CARRIER |
ULTRA FAST SOFT RECOVERY |
R-CBCC-N3 |
CATHODE |
1 |
150 A |
SILICON |
||||||||||||||||||||||||||||||||||||
Infineon Technologies |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
25 A |
.035 us |
1 |
CHIP CARRIER |
ULTRA FAST SOFT RECOVERY |
R-CBCC-N3 |
CATHODE |
1 |
150 A |
SILICON |
||||||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.6 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
NICKEL PALLADIUM GOLD |
1 |
1 |
2 A |
e4 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.28 V |
1 |
CHIP CARRIER |
Rectifier Diodes |
20 V |
150 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
Not Qualified |
1 |
6 A |
e4 |
260 |
SILICON |
||||||||||||||||||||||||||||
Infineon Technologies |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
30 A |
SCHOTTKY |
1 |
CHIP CARRIER |
60 V |
EFFICIENCY |
R-CBCC-N3 |
CATHODE |
HIGH RELIABILITY |
1 |
120 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
Infineon Technologies |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
30 A |
SCHOTTKY |
1 |
CHIP CARRIER |
60 V |
EFFICIENCY |
R-CBCC-N3 |
CATHODE |
HIGH RELIABILITY |
1 |
120 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.5 A |
.5 V |
SCHOTTKY |
300 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
GOLD |
R-XBCC-N2 |
1 |
TR, 7 INCH: 15000 |
1 |
2 A |
e4 |
SILICON |
||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.2 A |
.005 us |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
GOLD |
R-XBCC-N2 |
1 |
.23 W |
1 |
e4 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||||||||
Infineon Technologies |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
25 A |
1.19 V |
.035 us |
1 |
CHIP CARRIER |
Rectifier Diodes |
200 V |
150 Cel |
ULTRA FAST SOFT RECOVERY |
TIN LEAD |
R-CBCC-N3 |
CATHODE |
Not Qualified |
1 |
150 A |
e0 |
SILICON |
|||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
COMMON ANODE, 2 ELEMENTS |
.033 A |
SCHOTTKY |
2 |
SMALL OUTLINE |
GOLD OVER NICKEL |
R-CDSO-N3 |
Qualified |
e4 |
SILICON |
MIL-19500/444 |
|||||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
20 A |
1.723 V |
SCHOTTKY |
200 uA |
1 |
1230 V |
UNCASED CHIP |
1200 V |
175 Cel |
EFFICIENCY |
S-XUUC-N1 |
HIGH RELIABILITY |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
|||||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.45 V |
SCHOTTKY |
.5 uA |
1 |
SMALL OUTLINE |
30 V |
125 Cel |
MATTE TIN |
R-PDSO-N2 |
1 |
1 |
.5 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||||
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
12.5 A |
1 |
SMALL OUTLINE |
40 V |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
R-PDSO-N2 |
CATHODE |
IR-NOM, VF-NOM |
1 |
250 A |
SILICON |
|||||||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.1 A |
1.2 V |
.0016 us |
.5 uA |
1 |
80 V |
CHIP CARRIER |
85 V |
150 Cel |
FAST RECOVERY |
R-XBCC-N2 |
.15 W |
1 |
1 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.1 A |
1.2 V |
.0016 us |
.5 uA |
1 |
80 V |
CHIP CARRIER |
85 V |
150 Cel |
FAST RECOVERY |
R-XBCC-N2 |
.15 W |
1 |
1 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.1 A |
1.2 V |
.0016 us |
.5 uA |
1 |
80 V |
CHIP CARRIER |
85 V |
150 Cel |
FAST RECOVERY |
R-XBCC-N2 |
.15 W |
1 |
1 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
Abb |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
3246 A |
1 |
DISK BUTTON |
6000 V |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
ISOLATED |
Not Qualified |
1 |
40000 A |
SILICON |
|||||||||||||||||||||||||||||||||
|
Bourns |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
1 V |
5 uA |
1 |
600 V |
SMALL OUTLINE |
600 V |
175 Cel |
EFFICIENCY |
-65 Cel |
TIN |
R-PDSO-N2 |
1 |
LOW POWER LOSS |
1 |
50 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.18 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
20 V |
150 Cel |
Tin (Sn) |
R-PBCC-N2 |
1 |
Not Qualified |
1 |
3 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.5 V |
.007 us |
SCHOTTKY |
30 uA |
1 |
10 V |
SMALL OUTLINE |
20 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
R-PDSO-N2 |
1 |
Not Qualified |
.34 W |
1 |
3 A |
e3 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.61 V |
.0029 us |
SCHOTTKY |
100 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
.28 W |
1 |
10 A |
30 |
260 |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.7 A |
.38 V |
1 |
CHIP CARRIER |
Rectifier Diodes |
20 V |
150 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
Not Qualified |
1 |
7 A |
e4 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.37 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PBCC-N2 |
1 |
.25 W |
1 |
.5 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Semikron International |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
6000 A |
1.3 V |
1 |
DISK BUTTON |
Rectifier Diodes |
600 V |
180 Cel |
GENERAL PURPOSE |
-40 Cel |
TIN SILVER |
O-CEDB-N2 |
ISOLATED |
Not Qualified |
1 |
50000 A |
e2 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1100 A |
1.44 V |
35000 uA |
1 |
DISK BUTTON |
3000 V |
150 Cel |
HIGH VOLTAGE HIGH POWER |
-40 Cel |
O-CEDB-N2 |
1 |
11000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
2080 A |
1.81 V |
75000 uA |
1 |
DISK BUTTON |
3000 V |
150 Cel |
HIGH VOLTAGE HIGH POWER |
-40 Cel |
O-CEDB-N2 |
1 |
DO-200AC |
25150 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1925 A |
1.22 V |
75000 uA |
1 |
DISK BUTTON |
1000 V |
180 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
1 |
DO-200AC |
37500 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.15 A |
.715 V |
.004 us |
2 |
CHIP CARRIER |
Rectifier Diodes |
75 V |
150 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N3 |
1 |
CATHODE |
.4 W |
2 A |
e4 |
30 |
260 |
SILICON |
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|
Bourns |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
5 uA |
1 |
1000 V |
SMALL OUTLINE |
1000 V |
175 Cel |
EFFICIENCY |
-65 Cel |
Tin (Sn) |
R-PDSO-N2 |
1 |
LOW POWER LOSS |
1 |
30 A |
e3 |
30 |
260 |
SILICON |
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|
Comchip Technology |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.4 V |
.005 us |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
125 Cel |
GOLD |
R-PBCC-N2 |
.125 W |
1 |
4 A |
e4 |
30 |
260 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.