Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Nexperia |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.32 A |
3 us |
2 |
SMALL OUTLINE |
85 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-N3 |
1 |
CATHODE |
.325 W |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||
|
Bourns |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.03 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
45 V |
125 Cel |
-40 Cel |
COPPER NICKEL GOLD |
R-PDSO-N2 |
1 |
Not Qualified |
.15 W |
1 |
e4 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
Bourns |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
1 V |
.004 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
90 V |
125 Cel |
-40 Cel |
R-PDSO-N2 |
1 |
Not Qualified |
.15 W |
1 |
1 A |
SILICON |
|||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
-65 Cel |
R-PBCC-N2 |
Not Qualified |
.315 W |
1 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.3 A |
.004 us |
2 |
SMALL OUTLINE |
100 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-N3 |
1 |
CATHODE |
.325 W |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
-55 Cel |
TIN |
R-PBCC-N2 |
1 |
.315 W |
1 |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.35 V |
SCHOTTKY |
10 uA |
1 |
SMALL OUTLINE |
30 V |
125 Cel |
MATTE TIN |
R-PDSO-N2 |
1 |
1 |
1 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
125 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
|
Comchip Technology |
RECTIFIER DIODE |
DUAL |
NO LEAD |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.35 V |
SCHOTTKY |
10 uA |
1 |
10 V |
SMALL OUTLINE |
35 V |
125 Cel |
GOLD |
R-PDSO-N2 |
1 |
30 V |
1 A |
e4 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.53 V |
SCHOTTKY |
50 uA |
1 |
CHIP CARRIER |
30 V |
125 Cel |
MATTE TIN |
R-PBCC-N2 |
1 |
.1 W |
HIGH RELIABILITY |
1 |
.5 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.215 A |
.715 V |
.004 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
-65 Cel |
Tin (Sn) |
R-PBCC-N2 |
1 |
Not Qualified |
.25 W |
1 |
4 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.32 V |
.005 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
125 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PDSO-N2 |
1 |
Not Qualified |
.25 W |
HIGH RELIABILITY |
1 |
.6 A |
e4 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
2 A |
.42 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
20 V |
125 Cel |
EFFICIENCY |
R-XBCC-N2 |
1 |
ANODE |
Not Qualified |
1.56 W |
LOW LEAKAGE CURRENT |
1 |
28 A |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1.4 A |
.39 V |
.003 us |
SCHOTTKY |
4 uA |
1 |
10 V |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-N2 |
1 |
CATHODE |
.41 W |
1 |
5 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.215 A |
1.35 V |
3 us |
.5 uA |
1 |
75 V |
CHIP CARRIER |
Rectifier Diodes |
85 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN |
R-PBCC-N2 |
1 |
.25 W |
LOW LEAKAGE CURRENT |
1 |
85 V |
.5 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.033 A |
SCHOTTKY |
2 |
SMALL OUTLINE |
TIN LEAD |
R-CDSO-N3 |
Qualified |
e0 |
SILICON |
MIL-19500/444 |
||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.22 V |
.004 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
TIN |
R-PDSO-N2 |
1 |
Not Qualified |
.34 W |
1 |
3 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
NO LEAD |
8 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
3 A |
.9 V |
SCHOTTKY |
12 uA |
1 |
60 V |
SMALL OUTLINE |
60 V |
EFFICIENCY |
-65 Cel |
MATTE TIN |
S-PDSO-F8 |
1 |
CATHODE |
FREE WHEELING DIODE |
1 |
50 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
M/a-com Technology Solutions |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
COMMON ANODE, 2 ELEMENTS |
.3 A |
1.2 V |
.005 us |
.5 uA |
2 |
75 V |
SMALL OUTLINE |
75 V |
200 Cel |
FAST RECOVERY |
-65 Cel |
GOLD OVER NICKEL |
R-CDSO-N3 |
1 |
2.5 A |
e4 |
SILICON |
|||||||||||||||||||||||||||||
Changzhou Galaxy Century Microelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.35 V |
SCHOTTKY |
10 uA |
1 |
10 V |
CHIP CARRIER |
35 V |
125 Cel |
GENERAL PURPOSE |
R-PBCC-N2 |
1 |
1 A |
SILICON |
MIL-STD-202 |
|||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
15 A |
SCHOTTKY |
1 |
CHIP CARRIER |
100 V |
EFFICIENCY |
TIN LEAD |
R-CBCC-N3 |
ISOLATED |
Qualified |
HIGH RELIABILITY |
1 |
250 A |
e0 |
SILICON |
MIL-19500/679 |
||||||||||||||||||||||||||||||
|
Comchip Technology |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.15 A |
1 V |
.004 us |
1 |
CHIP CARRIER |
Rectifier Diodes |
100 V |
125 Cel |
-40 Cel |
GOLD |
R-PBCC-N2 |
.15 W |
HIGH RELIABILITY |
1 |
4 A |
e4 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 A |
.21 V |
1 |
CHIP CARRIER |
Rectifier Diodes |
40 V |
150 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
Not Qualified |
HIGH RELIABILITY |
1 |
5 A |
e4 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
NO LEAD |
6 |
YES |
SQUARE |
PLASTIC/EPOXY |
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.3 A |
.715 V |
.004 us |
50 uA |
4 |
75 V |
SMALL OUTLINE |
Signal Diodes |
75 V |
150 Cel |
-65 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
S-PDSO-N6 |
1 |
ANODE AND CATHODE |
.5 W |
e4 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.18 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
20 V |
150 Cel |
TIN |
R-PDSO-N2 |
1 |
Not Qualified |
1 |
3 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
2100 A |
1.55 V |
60000 uA |
1 |
DISK BUTTON |
400 V |
180 Cel |
HIGH VOLTAGE HIGH POWER |
-40 Cel |
O-CEDB-N2 |
1 |
DO-200AB |
25000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.215 A |
1.25 V |
.004 us |
.5 uA |
1 |
80 V |
SMALL OUTLINE |
100 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
TIN |
R-PDSO-N2 |
1 |
.345 W |
LOW LEAKAGE CURRENT |
1 |
MO-343AA |
4 A |
e3 |
30 |
260 |
SILICON |
IEC-60134 |
|||||||||||||||||||||
Infineon Technologies |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
30 A |
SCHOTTKY |
1 |
CHIP CARRIER |
60 V |
EFFICIENCY |
R-CBCC-N3 |
CATHODE |
HIGH RELIABILITY |
1 |
120 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.07 A |
.41 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
70 V |
150 Cel |
TIN |
R-PBCC-N2 |
1 |
CATHODE |
Not Qualified |
1 |
.1 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.24 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
150 Cel |
TIN |
R-PBCC-N2 |
1 |
Not Qualified |
.25 W |
1 |
.6 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Bourns |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
1 V |
.004 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
90 V |
125 Cel |
-40 Cel |
R-PDSO-N2 |
1 |
Not Qualified |
.15 W |
1 |
1 A |
SILICON |
|||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
NO LEAD |
8 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
8 A |
.89 V |
SCHOTTKY |
30 uA |
1 |
170 V |
SMALL OUTLINE |
170 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN |
S-PDSO-N8 |
1 |
CATHODE |
FREE WHEELING DIODE |
1 |
170 V |
140 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
800 A |
1.86 V |
15000 uA |
1 |
DISK BUTTON |
2000 V |
190 Cel |
HIGH VOLTAGE HIGH POWER |
-40 Cel |
O-CEDB-N2 |
1 |
DO-200AA |
8640 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Comchip Technology |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
1 V |
.004 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
90 V |
125 Cel |
-40 Cel |
GOLD |
R-PDSO-N2 |
.15 W |
HIGH RELIABILITY |
1 |
1 A |
e4 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.15 A |
1 V |
.004 us |
5 uA |
1 |
SMALL OUTLINE |
100 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-N2 |
1 |
.1 W |
1 |
4 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.03 A |
.34 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
15 V |
150 Cel |
TIN |
R-PBCC-N2 |
1 |
Not Qualified |
1 |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||||
Infineon Technologies |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
30 A |
1.34 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
60 V |
150 Cel |
EFFICIENCY |
TIN LEAD |
R-CBCC-N3 |
CATHODE |
Not Qualified |
HIGH RELIABILITY |
1 |
120 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.07 A |
.96 V |
.0016 us |
SCHOTTKY |
10 uA |
1 |
70 V |
CHIP CARRIER |
Rectifier Diodes |
70 V |
150 Cel |
FAST RECOVERY |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
Not Qualified |
.43 W |
1 |
70 V |
.8 A |
e4 |
30 |
260 |
SILICON |
MIL-STD-202 |
|||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.32 A |
3 us |
2 |
CHIP CARRIER |
85 V |
150 Cel |
-55 Cel |
TIN |
R-PBCC-N3 |
1 |
CATHODE |
.325 W |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||
|
Comchip Technology |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.55 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
45 V |
125 Cel |
GOLD |
R-PDSO-N2 |
.15 W |
1 |
2 A |
e4 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
Comchip Technology |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.15 A |
1 V |
.004 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
-55 Cel |
Gold (Au) |
R-PDSO-N2 |
.15 W |
HIGH RELIABILITY |
1 |
1.5 A |
e4 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1240 A |
2.1 V |
40000 uA |
1 |
1800 V |
DISK BUTTON |
1800 V |
180 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
1 |
12800 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Microchip Technology |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.033 A |
SCHOTTKY |
2 |
SMALL OUTLINE |
GOLD OVER NICKEL |
R-CDSO-N3 |
Qualified |
e4 |
SILICON |
MIL-19500/444 |
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|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
2 A |
.42 V |
.055 us |
SCHOTTKY |
1000 uA |
2 |
SMALL OUTLINE |
Rectifier Diodes |
20 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
S-PDSO-N3 |
1 |
CATHODE |
.5 W |
1 |
9 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
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|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
NO LEAD |
5 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.79 V |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PDSO-N5 |
1 |
CATHODE |
Not Qualified |
1 |
32 A |
e4 |
30 |
260 |
SILICON |
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|
Littelfuse |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
642 A |
15 us |
1 |
DISK BUTTON |
2400 V |
GENERAL PURPOSE |
O-CEDB-N2 |
Not Qualified |
1 |
6050 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Infineon Technologies |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.2 A |
.004 us |
1 |
CHIP CARRIER |
85 V |
150 Cel |
GOLD |
R-XBCC-N2 |
1 |
.25 W |
1 |
e4 |
SILICON |
AEC-Q101 |
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|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.215 A |
.004 us |
1 |
SMALL OUTLINE |
100 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-N2 |
1 |
Not Qualified |
.25 W |
1 |
e3 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.