Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
.47 V |
.004 us |
SCHOTTKY |
2500 uA |
1 |
SMALL OUTLINE |
30 V |
150 Cel |
EFFICIENCY |
-55 Cel |
S-PDSO-N3 |
CATHODE |
.5 W |
FREE WHEELING DIODE |
1 |
17 A |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
.575 V |
.0055 us |
SCHOTTKY |
250 uA |
1 |
SMALL OUTLINE |
60 V |
150 Cel |
EFFICIENCY |
-55 Cel |
S-PDSO-N3 |
CATHODE |
.52 W |
FREE WHEELING DIODE |
1 |
18 A |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
TIN |
R-PBCC-N2 |
1 |
Not Qualified |
.315 W |
1 |
e3 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
1 A |
.54 V |
.003 us |
SCHOTTKY |
100 uA |
2 |
60 V |
SMALL OUTLINE |
60 V |
150 Cel |
EFFICIENCY |
-55 Cel |
S-PDSO-N3 |
CATHODE |
.5 W |
FREE WHEELING DIODE |
1 |
60 V |
9 A |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
20 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-N2 |
1 |
CATHODE |
.41 W |
1 |
e3 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.325 A |
3 us |
1 |
CHIP CARRIER |
85 V |
150 Cel |
-55 Cel |
TIN |
R-PBCC-N2 |
1 |
.335 W |
1 |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.25 V |
.0022 us |
SCHOTTKY |
2000 uA |
1 |
12 V |
CHIP CARRIER |
12 V |
125 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.325 W |
1 |
12 V |
4 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.0024 us |
SCHOTTKY |
1 |
CHIP CARRIER |
60 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
.525 W |
1 |
30 |
260 |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.525 V |
.00125 us |
SCHOTTKY |
80 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.405 W |
1 |
40 V |
3.5 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.82 V |
.00125 us |
SCHOTTKY |
80 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.405 W |
1 |
40 V |
3.5 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
1 A |
.5 V |
.0035 us |
SCHOTTKY |
55 uA |
2 |
40 V |
SMALL OUTLINE |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
S-PDSO-N3 |
CATHODE |
.5 W |
FREE WHEELING DIODE |
1 |
40 V |
9 A |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.0035 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
30 V |
125 Cel |
-40 Cel |
R-PDSO-N2 |
.42 W |
1 |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1.4 A |
.39 V |
.003 us |
SCHOTTKY |
4 uA |
1 |
10 V |
SMALL OUTLINE |
40 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-N2 |
1 |
CATHODE |
.41 W |
1 |
5 A |
e3 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
1 A |
.04 us |
SCHOTTKY |
2 |
SMALL OUTLINE |
60 V |
150 Cel |
TIN |
S-PDSO-N3 |
1 |
CATHODE |
Not Qualified |
.5 W |
e3 |
SILICON |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.12 A |
.37 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
Tin (Sn) |
R-PDSO-N2 |
1 |
Not Qualified |
1 |
.2 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.0035 us |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
.525 W |
1 |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.006 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
30 V |
150 Cel |
TIN |
R-PDSO-N2 |
1 |
.34 W |
1 |
e3 |
SILICON |
|||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.61 V |
.004 us |
SCHOTTKY |
30 uA |
1 |
SMALL OUTLINE |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
R-PDSO-N2 |
1 |
CATHODE |
.415 W |
1 |
5 A |
e3 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.00137 us |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
.405 W |
1 |
30 |
260 |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.6 V |
.0045 us |
SCHOTTKY |
100 uA |
1 |
60 V |
SMALL OUTLINE |
60 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PDSO-N2 |
.37 W |
1 |
3 A |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.0035 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
30 V |
125 Cel |
-40 Cel |
R-PDSO-N2 |
.42 W |
1 |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.006 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
TIN |
R-PDSO-N2 |
1 |
Not Qualified |
.34 W |
1 |
e3 |
SILICON |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.59 V |
.002 us |
SCHOTTKY |
10 uA |
1 |
40 V |
SMALL OUTLINE |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
R-PDSO-N2 |
1 |
CATHODE |
.39 W |
1 |
3 A |
e3 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.49 V |
.0016 us |
SCHOTTKY |
200 uA |
1 |
20 V |
SMALL OUTLINE |
20 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
R-PDSO-N2 |
1 |
.37 W |
1 |
6 A |
e3 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.0035 us |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
.69 W |
1 |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.25 V |
.0022 us |
SCHOTTKY |
2000 uA |
1 |
12 V |
CHIP CARRIER |
12 V |
125 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.325 W |
1 |
12 V |
4 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.72 V |
.00142 us |
SCHOTTKY |
9 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.405 W |
1 |
30 V |
3.5 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.00137 us |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
.405 W |
1 |
30 |
260 |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.525 V |
.00125 us |
SCHOTTKY |
80 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.405 W |
1 |
40 V |
3.5 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
2 A |
.055 us |
SCHOTTKY |
2 |
SMALL OUTLINE |
20 V |
150 Cel |
EFFICIENCY |
TIN |
S-PDSO-N3 |
1 |
CATHODE |
Not Qualified |
.5 W |
1 |
9 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.15 A |
.001 V |
.004 us |
2 |
CHIP CARRIER |
Rectifier Diodes |
90 V |
150 Cel |
TIN |
R-PBCC-N3 |
1 |
ANODE |
Not Qualified |
.25 W |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.88 V |
.00128 us |
SCHOTTKY |
6.5 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.405 W |
1 |
40 V |
3.5 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.0024 us |
SCHOTTKY |
1 |
CHIP CARRIER |
60 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
.525 W |
1 |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.42 V |
.055 us |
SCHOTTKY |
1000 uA |
2 |
SMALL OUTLINE |
20 V |
150 Cel |
EFFICIENCY |
-55 Cel |
S-PDSO-N3 |
CATHODE |
.5 W |
FREE WHEELING DIODE |
1 |
9 A |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.0024 us |
SCHOTTKY |
1 |
CHIP CARRIER |
60 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
.525 W |
1 |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
1 A |
.375 V |
.05 us |
SCHOTTKY |
1900 uA |
1 |
20 V |
SMALL OUTLINE |
20 V |
150 Cel |
EFFICIENCY |
-55 Cel |
S-PDSO-N3 |
CATHODE |
.5 W |
FREE WHEELING DIODE |
1 |
20 V |
17 A |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
-65 Cel |
TIN |
R-PBCC-N2 |
1 |
Not Qualified |
.315 W |
1 |
e3 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.15 A |
.001 V |
.004 us |
2 |
SMALL OUTLINE |
Rectifier Diodes |
90 V |
150 Cel |
Tin (Sn) |
R-PBCC-N3 |
1 |
ANODE |
Not Qualified |
.25 W |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.72 V |
.00142 us |
SCHOTTKY |
9 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.405 W |
1 |
30 V |
3.5 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.05 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
150 Cel |
EFFICIENCY |
R-PDSO-N3 |
CATHODE |
.5 W |
1 |
17 A |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.32 A |
1.25 V |
3 us |
.005 uA |
2 |
75 V |
CHIP CARRIER |
85 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
R-PBCC-N3 |
CATHODE |
.325 W |
LOW LEAKAGE CURRENT |
1 |
.5 A |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.07 A |
.41 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
70 V |
150 Cel |
Tin (Sn) |
R-PBCC-N2 |
1 |
CATHODE |
Not Qualified |
1 |
.1 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
1 A |
.375 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
20 V |
150 Cel |
TIN |
S-PDSO-N3 |
1 |
CATHODE |
.96 W |
1 |
17 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.88 V |
.00128 us |
SCHOTTKY |
6.5 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.405 W |
1 |
40 V |
3.5 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, 2 ELEMENTS |
.17 A |
1.25 V |
.004 us |
.5 uA |
2 |
80 V |
SMALL OUTLINE |
90 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-N3 |
1 |
.305 W |
4 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.3 A |
.004 us |
2 |
SMALL OUTLINE |
100 V |
150 Cel |
-55 Cel |
R-PDSO-N3 |
CATHODE |
.325 W |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.32 A |
1.25 V |
3 us |
.005 uA |
2 |
75 V |
CHIP CARRIER |
85 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
R-PBCC-N3 |
CATHODE |
.325 W |
LOW LEAKAGE CURRENT |
1 |
.5 A |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.505 V |
.0031 us |
SCHOTTKY |
115 uA |
1 |
20 V |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.525 W |
1 |
40 V |
10 A |
SILICON |
IEC-60134 |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.