| Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
1 A |
.04 us |
SCHOTTKY |
2 |
SMALL OUTLINE |
60 V |
150 Cel |
TIN |
S-PDSO-N3 |
1 |
CATHODE |
Not Qualified |
.5 W |
e3 |
SILICON |
||||||||||||||||||||||||||||||
|
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.12 A |
.37 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
Tin (Sn) |
R-PDSO-N2 |
1 |
Not Qualified |
1 |
.2 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.0035 us |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
.525 W |
1 |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||||||
|
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.006 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
30 V |
150 Cel |
TIN |
R-PDSO-N2 |
1 |
.34 W |
1 |
e3 |
SILICON |
|||||||||||||||||||||||||||||||
|
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.61 V |
.004 us |
SCHOTTKY |
30 uA |
1 |
SMALL OUTLINE |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
R-PDSO-N2 |
1 |
CATHODE |
.415 W |
1 |
5 A |
e3 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.00137 us |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
.405 W |
1 |
30 |
260 |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.6 V |
.0045 us |
SCHOTTKY |
100 uA |
1 |
60 V |
SMALL OUTLINE |
60 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PDSO-N2 |
.37 W |
1 |
3 A |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.0035 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
30 V |
125 Cel |
-40 Cel |
R-PDSO-N2 |
.42 W |
1 |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||||||
|
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.006 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
TIN |
R-PDSO-N2 |
1 |
Not Qualified |
.34 W |
1 |
e3 |
SILICON |
|||||||||||||||||||||||||||||||||
|
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.59 V |
.002 us |
SCHOTTKY |
10 uA |
1 |
40 V |
SMALL OUTLINE |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
R-PDSO-N2 |
1 |
CATHODE |
.39 W |
1 |
3 A |
e3 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
|
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.49 V |
.0016 us |
SCHOTTKY |
200 uA |
1 |
20 V |
SMALL OUTLINE |
20 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
R-PDSO-N2 |
1 |
.37 W |
1 |
6 A |
e3 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.0035 us |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
.69 W |
1 |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.25 V |
.0022 us |
SCHOTTKY |
2000 uA |
1 |
12 V |
CHIP CARRIER |
12 V |
125 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.325 W |
1 |
12 V |
4 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.72 V |
.00142 us |
SCHOTTKY |
9 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.405 W |
1 |
30 V |
3.5 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.00137 us |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
.405 W |
1 |
30 |
260 |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.525 V |
.00125 us |
SCHOTTKY |
80 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.405 W |
1 |
40 V |
3.5 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
|
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
2 A |
.055 us |
SCHOTTKY |
2 |
SMALL OUTLINE |
20 V |
150 Cel |
EFFICIENCY |
TIN |
S-PDSO-N3 |
1 |
CATHODE |
Not Qualified |
.5 W |
1 |
9 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.15 A |
.001 V |
.004 us |
2 |
CHIP CARRIER |
Rectifier Diodes |
90 V |
150 Cel |
TIN |
R-PBCC-N3 |
1 |
ANODE |
Not Qualified |
.25 W |
4 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.88 V |
.00128 us |
SCHOTTKY |
6.5 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.405 W |
1 |
40 V |
3.5 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
|
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.42 V |
.005 us |
SCHOTTKY |
900 uA |
1 |
SMALL OUTLINE |
20 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
R-PDSO-N2 |
1 |
CATHODE |
.415 W |
1 |
5 A |
e3 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.0035 us |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
.69 W |
1 |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||||||
|
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.45 V |
.005 us |
SCHOTTKY |
350 uA |
1 |
SMALL OUTLINE |
20 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
R-PDSO-N2 |
1 |
CATHODE |
.415 W |
1 |
5 A |
e3 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||
|
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
2 A |
.078 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
60 V |
150 Cel |
EFFICIENCY |
PURE TIN |
S-PDSO-N3 |
1 |
CATHODE |
Not Qualified |
.52 W |
1 |
18 A |
SILICON |
||||||||||||||||||||||||||||
|
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.085 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
150 Cel |
EFFICIENCY |
TIN |
R-PDSO-N3 |
1 |
CATHODE |
Not Qualified |
.52 W |
1 |
18 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
1 A |
.045 us |
SCHOTTKY |
2 |
SMALL OUTLINE |
40 V |
150 Cel |
TIN |
S-PDSO-N3 |
1 |
CATHODE |
Not Qualified |
.5 W |
e3 |
SILICON |
||||||||||||||||||||||||||||||
|
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.19 V |
.006 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
TIN |
R-PDSO-N2 |
1 |
Not Qualified |
.34 W |
1 |
3 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.55 V |
.0019 us |
SCHOTTKY |
45 uA |
1 |
20 V |
CHIP CARRIER |
20 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.405 W |
1 |
20 V |
4.5 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.47 V |
.00137 us |
SCHOTTKY |
80 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.405 W |
1 |
30 V |
4 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.32 A |
1.25 V |
3 us |
.005 uA |
2 |
75 V |
SMALL OUTLINE |
85 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
R-PDSO-N3 |
CATHODE |
.325 W |
LOW LEAKAGE CURRENT |
1 |
.5 A |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
620 A |
2.25 V |
5.3 us |
20000 uA |
1 |
DISK BUTTON |
1200 V |
150 Cel |
FAST RECOVERY |
-40 Cel |
O-CEDB-N2 |
1 |
10100 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
COMMON CATHODE, 2 ELEMENTS |
80 A |
.95 V |
SCHOTTKY |
2 |
CHIP CARRIER |
Rectifier Diodes |
60 V |
150 Cel |
EFFICIENCY |
TIN LEAD |
R-CBCC-N3 |
CATHODE |
Not Qualified |
HIGH RELIABILITY |
1 |
400 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
2.05 V |
14 uA |
1 |
1200 V |
UNCASED CHIP |
1200 V |
175 Cel |
FAST SOFT RECOVERY MEDIUM POWER |
-40 Cel |
S-XUUC-N1 |
1 |
1200 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
YES |
UNSPECIFIED |
UNSPECIFIED |
SINGLE |
16 A |
.2 us |
1 |
UNCASED CHIP |
200 V |
FAST RECOVERY |
X-XUUC-N |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
YES |
UNSPECIFIED |
UNSPECIFIED |
SINGLE |
16 A |
.5 us |
1 |
UNCASED CHIP |
800 V |
FAST RECOVERY |
X-XUUC-N |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
YES |
UNSPECIFIED |
UNSPECIFIED |
SINGLE |
120 A |
1 |
UNCASED CHIP |
800 V |
GENERAL PURPOSE |
X-XUUC-N |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
2200 A |
1 |
DISK BUTTON |
Rectifier Diodes |
2400 V |
160 Cel |
GENERAL PURPOSE |
-40 Cel |
MATTE TIN |
O-CEDB-N2 |
Not Qualified |
1 |
35000 A |
e3 |
SILICON |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
YES |
UNSPECIFIED |
UNSPECIFIED |
SINGLE |
40 A |
.2 us |
1 |
UNCASED CHIP |
400 V |
FAST RECOVERY |
X-XUUC-N |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
COMMON CATHODE, 2 ELEMENTS |
35 A |
SCHOTTKY |
2 |
CHIP CARRIER |
45 V |
GENERAL PURPOSE |
R-CBCC-N3 |
CATHODE |
HIGH RELIABILITY |
1 |
300 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
YES |
UNSPECIFIED |
UNSPECIFIED |
SINGLE |
70 A |
.5 us |
1 |
UNCASED CHIP |
100 V |
FAST RECOVERY |
X-XUUC-N |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
465 A |
3.45 us |
1 |
DISK BUTTON |
1000 V |
FAST RECOVERY |
O-CEDB-N2 |
Not Qualified |
1 |
13290 A |
SILICON |
|||||||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
100 A |
1 |
UNCASED CHIP |
1200 V |
175 Cel |
FAST SOFT RECOVERY |
-40 Cel |
R-XUUC-N1 |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
2.25 V |
14 uA |
1 |
1200 V |
UNCASED CHIP |
1200 V |
175 Cel |
FAST SOFT RECOVERY HIGH POWER |
-40 Cel |
S-XUUC-N1 |
1 |
1200 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
35 A |
2.05 V |
7.7 uA |
1 |
UNCASED CHIP |
1200 V |
175 Cel |
FAST SOFT RECOVERY MEDIUM POWER |
-40 Cel |
R-XUUC-N1 |
1 |
SILICON |
||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
YES |
UNSPECIFIED |
UNSPECIFIED |
SINGLE |
45 A |
1 |
UNCASED CHIP |
1000 V |
GENERAL PURPOSE |
X-XUUC-N |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Infineon Technologies |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
900 A |
4.5 us |
1 |
DISK BUTTON |
1200 V |
FAST RECOVERY |
O-CEDB-N2 |
Not Qualified |
1 |
25750 A |
SILICON |
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|
|
Infineon Technologies |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
3840 A |
1 |
DISK BUTTON |
6800 V |
160 Cel |
GENERAL PURPOSE |
O-CEDB-N2 |
Not Qualified |
1 |
44000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
|
Infineon Technologies |
RECTIFIER DIODE |
SINGLE |
NO LEAD |
4 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
1.7 V |
SCHOTTKY |
70 uA |
1 |
SMALL OUTLINE |
650 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
S-PSSO-N4 |
3 |
CATHODE |
62 W |
HIGH RELIABILITY, PD-CASE |
1 |
21 A |
e3 |
SILICON CARBIDE |
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|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
1.15 V |
1 |
UNCASED CHIP |
Rectifier Diodes |
1200 V |
25 Cel |
GENERAL PURPOSE |
O-XUUC-N |
Not Qualified |
1 |
40 |
260 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.