Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
1.25 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
150 A |
e3 |
SILICON |
||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.125 A |
.004 us |
1 |
LONG FORM |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-34 |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1.28 V |
.05 us |
10 uA |
1 |
600 V |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
EFFICIENCY |
-55 Cel |
BRIGHT TIN |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
110 A |
e3 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
Vishay Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.5 us |
1 |
LONG FORM |
1000 V |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3.5 A |
1.1 V |
.02 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT, FREE WHEELING DIODE |
1 |
DO-201AD |
90 A |
e3 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 A |
.05 us |
LONG FORM |
ULTRA FAST RECOVERY |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
70 A |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.58 V |
SCHOTTKY |
1200 uA |
1 |
LONG FORM |
45 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
250 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.9 V |
2.5 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
400 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.9 V |
2.5 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
400 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
.8 V |
.03 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
ULTRA FAST RECOVERY |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-15 |
60 A |
e3 |
SILICON |
||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
2 us |
1 |
LONG FORM |
200 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-PALF-W2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-204AL |
e0 |
SILICON |
MIL-19500/427 |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
1.6 V |
20 us |
1 |
LONG FORM |
Rectifier Diodes |
1650 V |
175 Cel |
HIGH VOLTAGE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AC |
40 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.9 V |
2.5 us |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
400 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.44 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
150 Cel |
EFFICIENCY |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-201AD |
150 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3 A |
1 V |
6 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
100 A |
e2 |
SILICON |
||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.12 A |
1.3 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
35 V |
175 Cel |
Tin/Lead (Sn/Pb) |
O-XALF-W2 |
ISOLATED |
Not Qualified |
.3 W |
1 |
DO-35 |
e0 |
SILICON |
|||||||||||||||||||||||||||||
|
ROHM |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.13 A |
1.2 V |
.004 us |
.5 uA |
1 |
LONG FORM |
Rectifier Diodes |
90 V |
175 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.3 W |
HIGH RELIABILITY |
1 |
DO-35 |
.4 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.9 V |
10 uA |
1 |
800 V |
LONG FORM |
Rectifier Diodes |
800 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
400 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
.39 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.9 V |
2.5 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
400 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.6 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
150 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-201AD |
80 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
.95 V |
.015 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AC |
80 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
10 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
600 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
1 A |
1.2 V |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
150 Cel |
-40 Cel |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-15 |
60 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.9 V |
10 uA |
1 |
200 V |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
400 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1.25 A |
.82 V |
.05 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
GENERAL PURPOSE |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
50 A |
225 |
SILICON |
||||||||||||||||||||||||||||
|
IXYS Corporation |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
3.6 A |
1.25 V |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
1200 V |
180 Cel |
GENERAL PURPOSE |
NICKEL |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
120 A |
SILICON |
|||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.065 us |
1 |
LONG FORM |
600 V |
150 Cel |
ULTRA FAST SOFT RECOVERY POWER |
TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-201AD |
110 A |
e3 |
SILICON |
||||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.55 V |
SCHOTTKY |
500 uA |
1 |
40 V |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
EFFICIENCY |
-65 Cel |
Matte Tin (Sn) |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-201AD |
150 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.7 V |
.075 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
-65 Cel |
PURE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY, LOW POWER LOSS |
1 |
DO-41 |
50 A |
260 |
SILICON |
||||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
1 A |
1.2 V |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
150 Cel |
-40 Cel |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-15 |
60 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
Kyocera |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.55 A |
.98 V |
.03 us |
10 uA |
1 |
LONG FORM |
200 V |
150 Cel |
HIGH VOLTAGE FAST RECOVERY |
-40 Cel |
O-PALF-W2 |
ISOLATED |
LOW NOISE |
1 |
60 A |
SILICON |
||||||||||||||||||||||||||||||
Kyocera |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.9 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
-40 Cel |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
45 A |
SILICON |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
3 A |
1 |
LONG FORM |
GENERAL PURPOSE |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-27 |
SILICON |
||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3 A |
1 V |
6 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
100 A |
e2 |
SILICON |
||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.75 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
20 V |
125 Cel |
TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-41 |
25 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
5 A |
.47 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
20 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
500 A |
e0 |
SILICON |
|||||||||||||||||||||||||||
Texas Instruments |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
SINGLE |
.02 A |
1.5 V |
1 us |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
150 Cel |
O-GALF-W2 |
ISOLATED |
Not Qualified |
.2 W |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
ROHM |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.11 A |
1.2 V |
.004 us |
.5 uA |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
175 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.3 W |
HIGH RELIABILITY |
1 |
DO-35 |
.3 A |
e0 |
SILICON |
||||||||||||||||||||||||||
|
ROHM |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
40 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
ROHM |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
1.1 V |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-41 |
30 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.2 A |
1.5 V |
.075 us |
10 uA |
1 |
LONG FORM |
250 V |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Not Qualified |
.3 W |
HIGH RELIABILITY |
1 |
DO-34 |
1 A |
e0 |
30 |
240 |
SILICON |
||||||||||||||||||||||||||
Eupec & Kg |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 |
LONG FORM |
600 V |
150 Cel |
GENERAL PURPOSE |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
160 A |
SILICON |
||||||||||||||||||||||||||||||||||
|
ROHM |
RECTIFIER DIODE |
AXIAL |
GULL WING |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, 2 ELEMENTS |
.1 A |
1 V |
.1 uA |
2 |
LONG FORM |
Rectifier Diodes |
20 V |
150 Cel |
TIN SILVER COPPER |
R-PDSO-G3 |
1 |
Not Qualified |
.2 W |
.3 A |
e1 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
ROHM |
RECTIFIER DIODE |
AXIAL |
GULL WING |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.1 A |
1.2 V |
.004 us |
.1 uA |
2 |
LONG FORM |
Rectifier Diodes |
80 V |
150 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
R-PDSO-G3 |
1 |
CATHODE |
Not Qualified |
.15 W |
HIGH RELIABILITY |
4 A |
e1 |
10 |
260 |
SILICON |
||||||||||||||||||||||||
|
IXYS Corporation |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
3.6 A |
1.25 V |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
1200 V |
180 Cel |
GENERAL PURPOSE |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
120 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.