Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.79 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
150 Cel |
EFFICIENCY |
-65 Cel |
BRIGHT TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-201AD |
100 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||
|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.55 V |
SCHOTTKY |
50 uA |
1 |
60 V |
LONG FORM |
60 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
DO-201 |
220 A |
10 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Good-ark Electronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.79 V |
SCHOTTKY |
500 uA |
1 |
LONG FORM |
100 V |
150 Cel |
EFFICIENCY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
FREEWHEELING DIODE, LOW POWER LOSS |
1 |
DO-201AD |
150 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
.88 V |
.015 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-204AC |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Semikron International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
METAL |
SINGLE |
2 A |
1.2 V |
AVALANCHE |
4 uA |
1 |
LONG FORM |
Rectifier Diodes |
1700 V |
150 Cel |
HIGH VOLTAGE |
-40 Cel |
TIN SILVER |
O-MALF-W2 |
ANODE |
Not Qualified |
LEAKAGE CURRENT IS TYPICAL |
1 |
150 A |
e2 |
SILICON |
|||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
.85 V |
SCHOTTKY |
10 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
125 Cel |
GENERAL PURPOSE |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
REVERSE ENERGY TESTED |
1 |
DO-41 |
50 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
.95 V |
SCHOTTKY |
100 uA |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
O-PALF-W2 |
ISOLATED |
LOW POWER LOSS |
1 |
DO-204AC |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Yangzhou Yangjie Electronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.7 V |
SCHOTTKY |
100 uA |
1 |
LONG FORM |
100 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
TIN |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-201AD |
80 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
.86 V |
SCHOTTKY |
1 uA |
1 |
100 V |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
POWER |
MATTE TIN |
O-PALF-W2 |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
DO-41 |
50 A |
e3 |
SILICON |
UL RECOGNIZED |
||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
60 V |
150 Cel |
-40 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
DO-204AL |
25 A |
SILICON |
||||||||||||||||||||||||||||||||
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.15 us |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
150 Cel |
TIN LEAD |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
30 A |
e0 |
30 |
240 |
SILICON |
|||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
150 Cel |
-65 Cel |
PURE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY, LOW POWER LOSS |
1 |
30 A |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
10 uA |
1 |
800 V |
LONG FORM |
Rectifier Diodes |
800 V |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.2 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
70 V |
175 Cel |
MATTE TIN |
O-XALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
.6 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
National Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.025 uA |
1 |
LONG FORM |
Rectifier Diodes |
70 V |
175 Cel |
Tin/Lead (Sn/Pb) |
O-PALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
4 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 V |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
150 Cel |
GENERAL PURPOSE |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
DO-201AD |
200 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.1 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-201AD |
125 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.2 V |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-201AD |
200 A |
e3 |
SILICON |
||||||||||||||||||||||||||
Central Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
UNSPECIFIED |
SINGLE |
1 A |
1.2 V |
.15 us |
.5 uA |
1 |
400 V |
LONG FORM |
400 V |
55 Cel |
FAST RECOVERY |
TIN LEAD |
E-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
Micross Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
UNSPECIFIED |
SINGLE |
1 A |
1.2 V |
.15 us |
.5 uA |
1 |
400 V |
LONG FORM |
400 V |
55 Cel |
FAST RECOVERY |
TIN LEAD |
E-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.13 A |
.004 us |
1 |
LONG FORM |
90 V |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Not Qualified |
.3 W |
HIGH RELIABILITY |
1 |
DO-35 |
.6 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||
|
ROHM |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.13 A |
1.2 V |
.004 us |
.5 uA |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
175 Cel |
TIN SILVER COPPER |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.3 W |
HIGH RELIABILITY |
1 |
DO-34 |
.6 A |
e1 |
10 |
260 |
SILICON |
|||||||||||||||||||||||
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
30 A |
.55 V |
SCHOTTKY |
500 uA |
1 |
LONG FORM |
45 V |
200 Cel |
GENERAL PURPOSE |
-55 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
380 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
IEC-61215 |
|||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
30 A |
.52 V |
100 uA |
1 |
LONG FORM |
45 V |
150 Cel |
EFFICIENCY |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
1 |
275 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.52 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
HIGH POWER |
-55 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-204AR |
1900 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.95 V |
10 uA |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
125 Cel |
GENERAL PURPOSE |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
400 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.15 A |
.25 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
125 Cel |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
ISOLATED |
Not Qualified |
.15 W |
1 |
DO-35 |
750 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
250 V |
175 Cel |
TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.2 A |
1 |
LONG FORM |
250 V |
175 Cel |
-55 Cel |
TIN |
O-XALF-W2 |
ISOLATED |
LOW POWER LOSS |
1 |
DO-35 |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||||||
National Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.2 A |
1.25 V |
.05 us |
.1 uA |
1 |
LONG FORM |
200 V |
175 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
4 A |
SILICON |
||||||||||||||||||||||||||||||
|
Fairchild Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
250 V |
175 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.25 A |
.3 us |
AVALANCHE |
1 |
LONG FORM |
2000 V |
150 Cel |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
20 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
2.3 A |
.03 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
FAST SOFT RECOVERY |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
45 A |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
2.3 A |
.03 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
FAST SOFT RECOVERY |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
45 A |
SILICON |
|||||||||||||||||||||||||||||||||
|
Fagor Electronica S Coop |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2.3 A |
2.65 V |
.03 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
175 Cel |
VERY FAST SOFT RECOVERY |
TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
45 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1.05 A |
2.65 V |
.03 us |
AVALANCHE |
10 uA |
1 |
LONG FORM |
600 V |
175 Cel |
FAST SOFT RECOVERY |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
45 A |
SILICON |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
.88 V |
.025 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
ULTRA FAST RECOVERY |
-55 Cel |
Tin/Silver (Sn96.5Ag3.5) |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
DO-204AP |
50 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1.9 A |
1.1 V |
.025 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
200 V |
175 Cel |
GENERAL PURPOSE |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
90 A |
SILICON |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3.5 A |
.89 V |
.03 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
ULTRA FAST RECOVERY |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
90 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.075 A |
SCHOTTKY |
1 |
LONG FORM |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-35 |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.95 V |
.035 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
SUPER FAST RECOVERY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
DO-201AD |
150 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.95 V |
.035 us |
1 uA |
1 |
LONG FORM |
200 V |
150 Cel |
SUPER FAST RECOVERY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
150 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.25 A |
3 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
4000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
15 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.25 A |
2 us |
1 |
LONG FORM |
4000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
15 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.25 A |
3 V |
2 us |
5 uA |
1 |
4000 V |
LONG FORM |
4000 V |
175 Cel |
HIGH VOLTAGE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
15 A |
e3 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.25 A |
3 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
4000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
15 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.25 A |
3 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
4000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
15 A |
e3 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.