Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.05 us |
1 |
LONG FORM |
100 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW POWER LOSS, HIGH RELIABILITY |
1 |
DO-201AD |
200 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
2 us |
1 |
LONG FORM |
400 V |
175 Cel |
-65 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-204AL |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
MIL-19500/228 |
|||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.69 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-201AD |
150 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Sensitron Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.69 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-201AD |
180 A |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
1.35 V |
.075 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
ULTRA FAST RECOVERY POWER |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-41 |
35 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1 V |
.025 us |
10 uA |
1 |
LONG FORM |
100 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
150 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1 V |
.025 us |
10 uA |
1 |
LONG FORM |
100 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
150 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3.5 A |
1.1 V |
.02 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT, FREE WHEELING DIODE |
1 |
DO-201AD |
90 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Renesas Electronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.15 A |
.004 us |
1 |
LONG FORM |
200 Cel |
TIN COPPER |
O-XALF-W2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
HIGH RELIABILITY |
1 |
DO-35 |
e2 |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.2 V |
.2 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
150 Cel |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.2 V |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-201AD |
200 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.2 V |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-201AD |
200 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
200 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.2 V |
.15 us |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AC |
50 A |
e3 |
SILICON |
||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
20 V |
150 Cel |
-55 Cel |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY |
1 |
DO-41 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.9 V |
10 uA |
1 |
400 V |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
400 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.1 A |
.45 V |
.005 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
125 Cel |
Tin/Silver (Sn96.5Ag3.5) |
O-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
.2 W |
1 |
DO-35 |
750 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.1 A |
.45 V |
.005 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
125 Cel |
Tin/Silver (Sn96.5Ag3.5) |
O-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
.2 W |
1 |
DO-35 |
750 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1 A |
1.3 V |
.075 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
-55 Cel |
Tin/Silver (Sn96.5Ag3.5) |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-204AP |
30 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.075 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AC |
30 A |
e3 |
SILICON |
||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.65 A |
.075 us |
AVALANCHE |
1 |
LONG FORM |
1000 V |
175 Cel |
-65 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
IEC-134 |
||||||||||||||||||||||||||||||||
Fagor Electronica S Coop |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
2.5 V |
.075 us |
AVALANCHE |
5 uA |
1 |
1000 V |
LONG FORM |
1000 V |
175 Cel |
FAST SOFT RECOVERY |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
1100 V |
30 A |
SILICON |
|||||||||||||||||||||||||||
|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.02 A |
40 V |
.15 us |
1 |
LONG FORM |
Rectifier Diodes |
6000 V |
150 Cel |
-50 Cel |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
5 A |
260 |
SILICON |
||||||||||||||||||||||||||||
|
IXYS Corporation |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
3.6 A |
1.25 V |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
1600 V |
180 Cel |
GENERAL PURPOSE |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
120 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.25 A |
3 V |
2 us |
5 uA |
1 |
3000 V |
LONG FORM |
3000 V |
175 Cel |
HIGH VOLTAGE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
15 A |
e3 |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
5 A |
1 |
LONG FORM |
POWER |
Tin/Lead (Sn/Pb) |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
100 A |
e0 |
SILICON |
MIL-19500/420G |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
5 A |
1 |
LONG FORM |
POWER |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
100 A |
e0 |
SILICON |
MIL-19500/420G |
|||||||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.05 us |
1 |
LONG FORM |
600 V |
175 Cel |
-55 Cel |
TIN |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
DO-204AC |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1 V |
.025 us |
10 uA |
1 |
LONG FORM |
150 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
1 |
DO-201AD |
150 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.68 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
60 V |
150 Cel |
FAST RECOVERY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
120 A |
e3 |
SILICON |
|||||||||||||||||||||||||
Solid State Devices |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
5 A |
1.6 V |
.04 us |
1 |
LONG FORM |
Rectifier Diodes |
300 V |
175 Cel |
EFFICIENCY |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
100 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.1 V |
5 us |
5 uA |
1 |
LONG FORM |
600 V |
175 Cel |
HIGH VOLTAGE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, SNUBBER DIODE |
1 |
DO-201AD |
125 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Comchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.1 V |
10 uA |
1 |
600 V |
LONG FORM |
600 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-27 |
600 V |
150 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3 A |
1 V |
7.5 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
E-LALF-W2 |
ISOLATED |
1 |
100 A |
SILICON |
||||||||||||||||||||||||||||
Central Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 |
LONG FORM |
400 V |
GENERAL PURPOSE |
TIN LEAD |
E-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
125 A |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3.3 A |
.71 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
150 Cel |
HIGH POWER |
-40 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-201AD |
450 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Sangdest Microelectronics (Nanjing) |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
9 A |
.57 V |
SCHOTTKY |
2000 uA |
1 |
LONG FORM |
45 V |
GENERAL PURPOSE |
-55 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
DO-201AD |
400 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
ROHM |
RECTIFIER DIODE |
AXIAL |
GULL WING |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.1 A |
1.2 V |
.004 us |
.1 uA |
2 |
LONG FORM |
Rectifier Diodes |
80 V |
150 Cel |
TIN SILVER COPPER |
R-PDSO-G3 |
1 |
Not Qualified |
.2 W |
HIGH RELIABILITY |
4 A |
e1 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
1.5 A |
.3 us |
1 |
LONG FORM |
1000 V |
175 Cel |
EFFICIENCY |
-65 Cel |
TIN LEAD |
E-LALF-W2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-204AP |
35 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1.25 A |
1.5 V |
.3 us |
AVALANCHE |
150 uA |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
FAST SOFT RECOVERY |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
LEAKAGE CURRENT IS NOT AT 25 DEG C |
1 |
70 A |
SILICON |
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Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
125 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AB |
e0 |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
1.1 V |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-204AC |
70 A |
e3 |
SILICON |
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|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1.05 V |
.075 us |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
ULTRA FAST RECOVERY POWER |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-201AD |
110 A |
e3 |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
1 V |
2.5 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
400 A |
e3 |
SILICON |
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Multicomp Pro |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
1000 V |
150 Cel |
-55 Cel |
O-PALF-W2 |
ISOLATED |
2.5 W |
1 |
DO-41 |
SILICON |
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Texas Instruments |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
1 A |
1.1 V |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
175 Cel |
-65 Cel |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.