Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.7 V |
.075 us |
5 uA |
1 |
LONG FORM |
1000 V |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.7 V |
.075 us |
5 uA |
1 |
LONG FORM |
1000 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
DO-204AL |
30 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.7 V |
.075 us |
5 uA |
1 |
LONG FORM |
1000 V |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.7 V |
.075 us |
5 uA |
1 |
LONG FORM |
1000 V |
150 Cel |
EFFICIENCY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
DO-204AL |
30 A |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.075 us |
1 |
LONG FORM |
1000 V |
150 Cel |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
1 |
DO-204AL |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.1 A |
.96 V |
SCHOTTKY |
500 uA |
1 |
LONG FORM |
100 V |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
DO-204AL |
85 A |
SILICON |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
3 A |
.4 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
FAST RECOVERY POWER |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
80 A |
e0 |
SILICON |
MIL-19500/411L |
||||||||||||||||||||||||||||||
Microsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
40 V |
125 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
LOW POWER LOSS |
1 |
DO-41 |
e0 |
SILICON |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.3 us |
1 |
LONG FORM |
2000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
SNUBBER DIODE |
1 |
DO-204AL |
e3 |
SILICON |
|||||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
5 A |
.67 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
150 Cel |
EFFICIENCY |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
150 A |
SILICON |
||||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.15 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
75 V |
175 Cel |
MATTE TIN |
O-XALF-W2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
HIGH RELIABILITY, METALLURGICALLY BONDED |
1 |
DO-35 |
2 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.1 V |
3 us |
1 |
LONG FORM |
Rectifier Diodes |
1300 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-201AD |
100 A |
e3 |
SILICON |
|||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
2 us |
1 |
LONG FORM |
600 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-PALF-W2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-204AL |
e0 |
SILICON |
MIL-19500/228 |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.15 A |
3 us |
1 |
LONG FORM |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/241H |
||||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
45 V |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
DO-41 |
e0 |
SILICON |
MIL-19500/586 |
|||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
45 V |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
DO-41 |
e0 |
SILICON |
MIL-19500/586 |
|||||||||||||||||||||||||||||||
|
ROHM |
RECTIFIER DIODE |
AXIAL |
GULL WING |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.03 A |
.37 V |
SCHOTTKY |
1 uA |
2 |
LONG FORM |
Rectifier Diodes |
25 V |
125 Cel |
TIN SILVER COPPER |
R-PDSO-G3 |
1 |
Not Qualified |
HIGH RELIABILITY |
.2 A |
e1 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
.55 V |
SCHOTTKY |
150 uA |
1 |
LONG FORM |
40 V |
125 Cel |
GENERAL PURPOSE |
-40 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
DO-41 |
60 A |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
1.3 V |
.2 us |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
125 Cel |
EFFICIENCY |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
300 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Rectron |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
10 A |
1 |
LONG FORM |
1000 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
Matte Tin (Sn) |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
400 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.2 A |
.005 us |
1 |
LONG FORM |
75 V |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
METALLURGICALLY BONDED |
1 |
DO-35 |
e0 |
SILICON |
ESA/SCC 5101/023 |
||||||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 V |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
150 Cel |
GENERAL PURPOSE |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
DO-201AD |
200 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.033 A |
SCHOTTKY |
1 |
LONG FORM |
150 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
METALLURGICALLY BONDED |
1 |
DO-35 |
SILICON |
||||||||||||||||||||||||||||||||||
Master Instrument |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
40 V |
125 Cel |
-55 Cel |
O-PALF-W2 |
ISOLATED |
LOW POWER LOSS |
1 |
DO-41 |
SILICON |
|||||||||||||||||||||||||||||||||
Fairchild Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
40 V |
125 Cel |
-65 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1.25 W |
FREE WHEELING DIODE |
1 |
DO-41 |
SILICON |
|||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
40 V |
125 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
Frontier Electronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
125 Cel |
-65 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.55 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
150 Cel |
-40 Cel |
TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
35 A |
e3 |
SILICON |
||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.4 A |
1 |
LONG FORM |
600 V |
Tin/Lead (Sn/Pb) |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
METALLURGICALLY BONDED |
1 |
DO-35 |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
PURE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
30 A |
260 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
3 A |
.15 us |
1 |
LONG FORM |
400 V |
FAST RECOVERY POWER |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
80 A |
e0 |
SILICON |
MIL-19500/411L |
|||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
3 A |
1.2 V |
2 us |
1 uA |
1 |
400 V |
LONG FORM |
400 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
HIGH RELIABILITY |
1 |
440 V |
100 A |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
.55 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
.88 V |
.015 us |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-204AC |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
10 A |
.77 V |
SCHOTTKY |
50 uA |
1 |
100 V |
LONG FORM |
100 V |
150 Cel |
SUPER FAST RECOVERY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
100 V |
130 A |
SILICON |
IEC-61249; MIL-STD-750 |
||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
2 us |
1 |
LONG FORM |
800 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-201AD |
125 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Sensitron Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 |
LONG FORM |
800 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-201AD |
200 A |
SILICON |
|||||||||||||||||||||||||||||
|
Formosa Microsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.1 V |
5 uA |
1 |
LONG FORM |
1000 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
125 A |
SILICON |
||||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 V |
5 uA |
1 |
LONG FORM |
1000 V |
150 Cel |
EFFICIENCY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY, LOW POWER LOSS |
1 |
DO-201AD |
125 A |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.52 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
HIGH POWER |
-55 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-204AR |
1900 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
|
International Rectifier |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
8 A |
.44 V |
SCHOTTKY |
15000 uA |
1 |
LONG FORM |
45 V |
175 Cel |
GENERAL PURPOSE |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AR |
2400 A |
40 |
260 |
SILICON |
||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.4 A |
.05 us |
AVALANCHE |
1 |
LONG FORM |
90 V |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.45 W |
1 |
DO-35 |
SILICON |
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Vishay Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.75 A |
2 us |
1 |
LONG FORM |
1250 V |
175 Cel |
HIGH VOLTAGE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-204AC |
50 A |
e3 |
SILICON |
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Vishay Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.75 A |
2 us |
1 |
LONG FORM |
1250 V |
175 Cel |
HIGH VOLTAGE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-204AC |
50 A |
e3 |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3 A |
1.5 V |
20 us |
AVALANCHE |
140 uA |
1 |
1500 V |
LONG FORM |
Rectifier Diodes |
1650 V |
140 Cel |
EFFICIENCY |
TIN SILVER |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
e2 |
30 |
260 |
SILICON |
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NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1.05 A |
2.65 V |
.03 us |
AVALANCHE |
10 uA |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
FAST SOFT RECOVERY |
O-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
45 A |
225 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.