Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Nexperia |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.00125 us |
SCHOTTKY |
1 |
CHIP CARRIER |
40 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
.405 W |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.125 A |
.009 us |
1 |
CHIP CARRIER |
100 V |
125 Cel |
-40 Cel |
MATTE TIN |
R-PBCC-N2 |
1 |
.15 W |
HIGH RELIABILITY |
1 |
e3 |
SILICON |
||||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.215 A |
.715 V |
.004 us |
1 |
CHIP CARRIER |
Rectifier Diodes |
100 V |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
Not Qualified |
.25 W |
HIGH RELIABILITY |
1 |
4 A |
e4 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
ROHM |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1 A |
SCHOTTKY |
1 |
CHIP CARRIER |
40 V |
150 Cel |
NICKEL PALLADIUM GOLD |
R-XBCC-N2 |
1 |
e4 |
SILICON |
||||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
15 A |
.7 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
100 V |
150 Cel |
EFFICIENCY |
R-CBCC-N3 |
ISOLATED |
Qualified |
HIGH RELIABILITY |
1 |
250 A |
SILICON |
MIL-19500/679 |
|||||||||||||||||||||||||||||
|
ROHM |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.2 A |
.43 V |
SCHOTTKY |
.3 uA |
1 |
10 V |
CHIP CARRIER |
30 V |
150 Cel |
GENERAL PURPOSE |
NICKEL PALLADIUM GOLD |
R-XBCC-N2 |
1 |
1 |
1.5 A |
e4 |
SILICON |
||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.1 A |
.5 V |
SCHOTTKY |
50 uA |
1 |
30 V |
CHIP CARRIER |
35 V |
125 Cel |
GENERAL PURPOSE |
R-XBCC-N2 |
.1 W |
1 |
1 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.5 A |
.5 V |
.0086 us |
SCHOTTKY |
100 uA |
2 |
20 V |
CHIP CARRIER |
20 V |
150 Cel |
EFFICIENCY |
-55 Cel |
NICKEL GOLD |
R-PBCC-N2 |
1 |
LOW LEAKAGE CURRENT |
1 |
10 A |
e4 |
260 |
SILICON |
||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.35 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
125 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
Not Qualified |
.25 W |
HIGH RELIABILITY |
1 |
1 A |
e4 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
2 A |
.53 V |
SCHOTTKY |
150 uA |
1 |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
NICKEL GOLD |
R-XBCC-N2 |
1 |
ANODE |
LOW LEAKAGE CURRENT |
1 |
28 A |
e4 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.325 A |
3 us |
1 |
CHIP CARRIER |
85 V |
150 Cel |
-55 Cel |
TIN |
R-PBCC-N2 |
1 |
.335 W |
1 |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
4 A |
.55 V |
SCHOTTKY |
150 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
NICKEL GOLD |
R-PBCC-N2 |
ANODE |
LOW LEAKAGE CURRENT |
1 |
28 A |
e4 |
SILICON |
MIL-STD-202 |
|||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.5 A |
SCHOTTKY |
1 |
CHIP CARRIER |
40 V |
125 Cel |
R-XBCC-N2 |
1 |
1 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||||||||
Motorola |
RECTIFIER DIODE |
BOTTOM |
PIN/PEG |
2 |
NO |
ROUND |
METAL |
COMMON ANODE, 2 ELEMENTS |
15 A |
1.2 V |
1000 uA |
2 |
FLANGE MOUNT |
Rectifier Diodes |
100 V |
150 Cel |
SOFT RECOVERY POWER |
-65 Cel |
TIN LEAD |
O-MBFM-P2 |
ANODE |
Not Qualified |
1 |
400 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
|
ROHM |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.37 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
150 Cel |
R-PBCC-N2 |
HIGH RELIABILITY |
1 |
500 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
|
ROHM |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.1 A |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
NICKEL PALLADIUM GOLD |
R-XBCC-N2 |
1 |
e4 |
SILICON |
||||||||||||||||||||||||||||||||||
Texas Instruments |
RECTIFIER DIODE |
BOTTOM |
WIRE |
4 |
NO |
ROUND |
METAL |
SINGLE |
.05 A |
1 |
CYLINDRICAL |
O-MBCY-W4 |
Not Qualified |
1 |
TO-72 |
SILICON |
||||||||||||||||||||||||||||||||||||||
Texas Instruments |
RECTIFIER DIODE |
BOTTOM |
WIRE |
3 |
NO |
ROUND |
METAL |
COMMON ANODE, 2 ELEMENTS |
.025 us |
2 |
CYLINDRICAL |
O-MBCY-W3 |
ANODE |
Not Qualified |
TO-18 |
SILICON |
||||||||||||||||||||||||||||||||||||||
Texas Instruments |
RECTIFIER DIODE |
BOTTOM |
WIRE |
3 |
NO |
ROUND |
METAL |
COMMON ANODE, 2 ELEMENTS |
.025 us |
2 |
CYLINDRICAL |
O-MBCY-W3 |
ANODE |
Not Qualified |
TO-18 |
SILICON |
||||||||||||||||||||||||||||||||||||||
Texas Instruments |
RECTIFIER DIODE |
BOTTOM |
WIRE |
3 |
NO |
ROUND |
METAL |
COMMON CATHODE, 2 ELEMENTS |
.025 us |
2 |
CYLINDRICAL |
O-MBCY-W3 |
CATHODE |
Not Qualified |
TO-18 |
SILICON |
||||||||||||||||||||||||||||||||||||||
Texas Instruments |
RECTIFIER DIODE |
BOTTOM |
WIRE |
3 |
NO |
ROUND |
METAL |
COMMON CATHODE, 2 ELEMENTS |
.025 us |
2 |
CYLINDRICAL |
O-MBCY-W3 |
CATHODE |
Not Qualified |
TO-18 |
SILICON |
||||||||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.6 V |
.028 us |
SCHOTTKY |
80 uA |
1 |
CHIP CARRIER |
20 V |
150 Cel |
EFFICIENCY |
R-PBCC-N2 |
1 |
1.25 W |
LOW LEAKAGE CURRENT |
1 |
13 A |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.2 A |
1 V |
.1 us |
2 |
CYLINDRICAL |
Rectifier Diodes |
70 V |
135 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.625 W |
TO-92 |
.5 A |
e0 |
30 |
235 |
SILICON |
||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
.58 V |
.025 us |
SCHOTTKY |
80 uA |
1 |
CHIP CARRIER |
30 V |
150 Cel |
EFFICIENCY |
R-PBCC-N2 |
1 |
1.25 W |
LOW LEAKAGE CURRENT |
1 |
12 A |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.2 A |
.82 V |
.004 us |
2 |
CYLINDRICAL |
Rectifier Diodes |
100 V |
135 Cel |
TIN SILVER COPPER |
O-PBCY-T3 |
Not Qualified |
.625 W |
TO-92 |
.5 A |
e1 |
260 |
SILICON |
||||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.2 A |
.004 us |
2 |
CYLINDRICAL |
135 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.625 W |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.2 A |
.1 us |
2 |
CYLINDRICAL |
135 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.625 W |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.55 V |
.02 us |
SCHOTTKY |
40 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
GENERAL PURPOSE |
R-PBCC-N2 |
1 |
1.25 W |
LOW LEAKAGE CURRENT |
1 |
12 A |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
2 A |
.65 V |
.025 us |
SCHOTTKY |
20 uA |
2 |
30 V |
CHIP CARRIER |
30 V |
150 Cel |
FAST RECOVERY |
R-PBCC-N4 |
CATHODE |
.634 W |
1 |
30 V |
55 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.55 V |
SCHOTTKY |
150 uA |
1 |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
R-PBCC-N2 |
ANODE |
1.91 W |
LOW LEAKAGE CURRENT |
1 |
28 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.2 A |
.1 us |
2 |
CYLINDRICAL |
135 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.625 W |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.2 A |
.1 us |
2 |
CYLINDRICAL |
135 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.625 W |
TO-92 |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1 A |
.42 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
125 Cel |
R-XBCC-N2 |
1 |
ANODE |
Not Qualified |
1.47 W |
1 |
18 A |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.4 V |
.01 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
125 Cel |
1 |
2 A |
SILICON |
||||||||||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.1 us |
2 |
CYLINDRICAL |
135 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.625 W |
TO-92 |
e0 |
SILICON |
||||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.48 V |
.02189 us |
SCHOTTKY |
150 uA |
1 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
150 Cel |
EFFICIENCY |
R-PBCC-N2 |
1 |
ANODE |
1.56 W |
LOW LEAKAGE CURRENT |
1 |
28 A |
260 |
SILICON |
|||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.2 A |
.1 us |
2 |
CYLINDRICAL |
135 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.625 W |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.2 A |
.004 us |
2 |
CYLINDRICAL |
135 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.625 W |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.2 A |
.1 us |
2 |
CYLINDRICAL |
135 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.625 W |
TO-92 |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.42 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
1 |
CATHODE |
1 |
18 A |
260 |
SILICON |
|||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.01 us |
SCHOTTKY |
1 |
CYLINDRICAL |
50 V |
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
O-PBCY-T3 |
Not Qualified |
HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.6 V |
.04 us |
SCHOTTKY |
100 uA |
1 |
CHIP CARRIER |
30 V |
150 Cel |
EFFICIENCY |
R-PBCC-N2 |
1 |
1.32 W |
LOW LEAKAGE CURRENT |
1 |
14 A |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.2 A |
.004 us |
2 |
CYLINDRICAL |
135 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.625 W |
TO-92 |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.2 A |
.1 us |
2 |
CYLINDRICAL |
135 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.625 W |
TO-92 |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.2 A |
.004 us |
2 |
CYLINDRICAL |
135 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.625 W |
TO-92 |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.2 A |
.82 V |
.004 us |
2 |
CYLINDRICAL |
Rectifier Diodes |
100 V |
135 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.625 W |
TO-92 |
.5 A |
e0 |
235 |
SILICON |
|||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.49 V |
.075 us |
SCHOTTKY |
150 uA |
1 |
CHIP CARRIER |
20 V |
150 Cel |
EFFICIENCY |
R-PBCC-N2 |
1 |
.51 W |
LOW LEAKAGE CURRENT |
1 |
19 A |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
.59 V |
.033 us |
SCHOTTKY |
75 uA |
1 |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
R-PBCC-N2 |
1 |
1.32 W |
LOW LEAKAGE CURRENT |
1 |
13 A |
30 |
260 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.