BOTTOM Diodes & Rectifiers 644

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Working Test Current Config Frequency Band Nominal Reference Voltage Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Nominal Regulation Current (Ireg) Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Application Maximum Dynamic Impedance Maximum Limiting Voltage Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases JEDEC-95 Code Diode Cap Tolerance Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

STTH60400SAG

STMicroelectronics

RECTIFIER DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

UNSPECIFIED

SINGLE

60 A

1.35 V

.075 us

20 uA

1

CHIP CARRIER

400 V

175 Cel

FAST RECOVERY

R-XBCC-N3

CATHODE

SOFT FACTOR IS 0.3

1

500 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

EUROPEAN SPACE AGENCY

STPS80A150CSG

STMicroelectronics

RECTIFIER DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

COMMON CATHODE, 2 ELEMENTS

40 A

1.04 V

SCHOTTKY

14 uA

2

150 V

CHIP CARRIER

150 V

175 Cel

GENERAL PURPOSE

-65 Cel

R-CBCC-N3

CATHODE

1

190 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESA/SCC 5106/023

1N5811U01B

STMicroelectronics

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

6 A

.8 V

.035 us

1

CHIP CARRIER

Rectifier Diodes

150 V

175 Cel

POWER ULTRA FAST RECOVERY

R-XBCC-N2

Not Qualified

FREE WHEELING DIODE

1

100 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

STPS1045CSHRB

STMicroelectronics

RECTIFIER DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

UNSPECIFIED

COMMON CATHODE, 2 ELEMENTS

10 A

.57 V

SCHOTTKY

2

CHIP CARRIER

Rectifier Diodes

45 V

GENERAL PURPOSE

R-XBCC-N3

Not Qualified

1

200 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

EUROPEAN SPACE AGENCY

STTH60400SA1

STMicroelectronics

RECTIFIER DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

UNSPECIFIED

SINGLE

60 A

1.35 V

.075 us

20 uA

1

CHIP CARRIER

400 V

175 Cel

FAST RECOVERY

R-XBCC-N3

CATHODE

SOFT FACTOR IS 0.3

1

500 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

STTH60200CSAG

STMicroelectronics

RECTIFIER DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

COMMON CATHODE, 2 ELEMENTS

40 A

1.15 V

.06 us

30 uA

2

200 V

CHIP CARRIER

200 V

175 Cel

FAST RECOVERY

-65 Cel

R-CBCC-N3

CATHODE

SOFT FACTOR IS 0.25

1

300 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESA/SCC 5103/033

STPS1045C2SG

STMicroelectronics

RECTIFIER DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

UNSPECIFIED

COMMON CATHODE, 2 ELEMENTS

10 A

.88 V

SCHOTTKY

100 uA

2

45 V

CHIP CARRIER

45 V

175 Cel

MEDIUM VOLTAGE POWER

-65 Cel

R-XBCC-N3

CATHODE

LOW NOISE

1

200 A

SILICON

MIL-STD-750

STTH60200CSA1

STMicroelectronics

RECTIFIER DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

COMMON CATHODE, 2 ELEMENTS

40 A

1.15 V

.06 us

30 uA

2

200 V

CHIP CARRIER

200 V

175 Cel

FAST RECOVERY

-65 Cel

R-CBCC-N3

CATHODE

SOFT FACTOR IS 0.25

1

300 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

1N5811U02B

STMicroelectronics

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

6 A

.8 V

.035 us

1

CHIP CARRIER

Rectifier Diodes

150 V

175 Cel

POWER ULTRA FAST RECOVERY

R-XBCC-N2

Not Qualified

FREE WHEELING DIODE

1

100 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAV45112

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

WIRE

2

NO

ROUND

METAL

SINGLE

.05 A

1 V

.6 us

.00001 uA

1

CYLINDRICAL

35 V

125 Cel

O-MBCY-W2

CATHODE

Not Qualified

.2 W

1

SILICON

BAV45

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

WIRE

2

NO

ROUND

METAL

SINGLE

.05 A

1 V

.6 us

0 uA

1

CYLINDRICAL

35 V

125 Cel

O-MBCY-W2

Not Qualified

.2 W

1

TO-18

SILICON

934057250315

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.03 A

SCHOTTKY

1

CHIP CARRIER

15 V

150 Cel

R-PBCC-N2

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-60134

IP4306CX2/A,315

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

BALL

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

SCHOTTKY

1

GRID ARRAY

20 V

85 Cel

-35 Cel

R-PBGA-B2

.24 W

1

SILICON

IEC-60134

IP4306CX2/A

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

BALL

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

SCHOTTKY

1

GRID ARRAY

20 V

85 Cel

-35 Cel

R-PBGA-B2

.24 W

1

SILICON

IEC-60134

1PS10SB62

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.02 A

.8 V

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

40 V

150 Cel

TIN

R-PBCC-N2

Not Qualified

1

e3

SILICON

1PS10SB82

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.03 A

.34 V

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

15 V

150 Cel

Tin (Sn)

R-PBCC-N2

1

Not Qualified

1

e3

30

260

SILICON

1PS10SB63

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.02 A

.2 V

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

5 V

150 Cel

TIN

R-PBCC-N2

Not Qualified

1

.55 A

e3

SILICON

1PS10SB62,315

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.02 A

SCHOTTKY

1

CHIP CARRIER

150 Cel

TIN

R-PBCC-N2

Not Qualified

1

e3

SILICON

1PS10SB63,315

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.02 A

SCHOTTKY

1

CHIP CARRIER

150 Cel

TIN

R-PBCC-N2

Not Qualified

1

e3

SILICON

PMEG2002AESF

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.2 A

.42 V

.0019 us

SCHOTTKY

45 uA

1

20 V

CHIP CARRIER

20 V

125 Cel

EFFICIENCY

-55 Cel

R-PBCC-N2

.325 W

1

4.5 A

SILICON

IEC-60134

BAS40L

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.12 A

.38 V

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

40 V

150 Cel

Tin (Sn)

R-PBCC-N2

1

Not Qualified

LOW LEAKAGE CURRENT

1

.2 A

e3

30

260

SILICON

PMEG2002ESF

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.2 A

.49 V

.0019 us

SCHOTTKY

3.5 uA

1

20 V

CHIP CARRIER

20 V

125 Cel

EFFICIENCY

-55 Cel

R-PBCC-N2

.325 W

1

4.5 A

SILICON

IEC-60134

PMEG3010AESB

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.0035 us

SCHOTTKY

1

CHIP CARRIER

30 V

150 Cel

-55 Cel

R-PBCC-N2

.525 W

1

SILICON

IEC-60134

PMEG3010ESB

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1 A

.565 V

.0032 us

SCHOTTKY

45 uA

1

30 V

CHIP CARRIER

30 V

150 Cel

EFFICIENCY

-55 Cel

R-PBCC-N2

.525 W

1

30 V

10 A

SILICON

IEC-60134

BAS116L

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.325 A

1.25 V

3 us

.005 uA

1

75 V

CHIP CARRIER

85 V

150 Cel

GENERAL PURPOSE

-55 Cel

R-PBCC-N2

.335 W

LOW LEAKAGE CURRENT

1

.5 A

SILICON

AEC-Q101; IEC-60134

PMEG3010ESB,314

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1 A

.565 V

.0032 us

SCHOTTKY

45 uA

1

30 V

CHIP CARRIER

30 V

150 Cel

EFFICIENCY

-55 Cel

R-PBCC-N2

.525 W

1

30 V

10 A

SILICON

IEC-60134

RB521CS30L

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.1 A

SCHOTTKY

1

CHIP CARRIER

30 V

150 Cel

TIN

R-PBCC-N2

1

Not Qualified

.315 W

1

e3

SILICON

AEC-Q101; IEC-60134

BAS116L,315

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.325 A

3 us

1

CHIP CARRIER

85 V

150 Cel

-55 Cel

TIN

R-PBCC-N2

1

.335 W

1

e3

30

260

SILICON

AEC-Q101; IEC-60134

PMEG1201AESF,315

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.1 A

.25 V

.0022 us

SCHOTTKY

2000 uA

1

12 V

CHIP CARRIER

12 V

125 Cel

EFFICIENCY

-55 Cel

R-PBCC-N2

.325 W

1

12 V

4 A

SILICON

IEC-60134

PMEG6010ESB,315

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.0024 us

SCHOTTKY

1

CHIP CARRIER

60 V

150 Cel

-55 Cel

R-PBCC-N2

1

.525 W

1

30

260

SILICON

IEC-60134

PMEG4002AESF

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.2 A

.525 V

.00125 us

SCHOTTKY

80 uA

1

40 V

CHIP CARRIER

40 V

150 Cel

EFFICIENCY

-55 Cel

R-PBCC-N2

.405 W

1

40 V

3.5 A

SILICON

IEC-60134

PMEG4005AESF

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.5 A

.82 V

.00125 us

SCHOTTKY

80 uA

1

40 V

CHIP CARRIER

40 V

150 Cel

EFFICIENCY

-55 Cel

R-PBCC-N2

.405 W

1

40 V

3.5 A

SILICON

IEC-60134

PMEG3010AESB,314

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.0035 us

SCHOTTKY

1

CHIP CARRIER

30 V

150 Cel

-55 Cel

R-PBCC-N2

.525 W

1

SILICON

IEC-60134

PMEG3005AESF

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.00137 us

SCHOTTKY

1

CHIP CARRIER

30 V

150 Cel

-55 Cel

R-PBCC-N2

1

.405 W

1

30

260

SILICON

IEC-60134

PMEG3010AESA

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.0035 us

SCHOTTKY

1

CHIP CARRIER

30 V

150 Cel

-55 Cel

R-PBCC-N2

.69 W

1

SILICON

IEC-60134

PMEG1201AESF

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.1 A

.25 V

.0022 us

SCHOTTKY

2000 uA

1

12 V

CHIP CARRIER

12 V

125 Cel

EFFICIENCY

-55 Cel

R-PBCC-N2

.325 W

1

12 V

4 A

SILICON

IEC-60134

PMEG3005ESF

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.5 A

.72 V

.00142 us

SCHOTTKY

9 uA

1

30 V

CHIP CARRIER

30 V

150 Cel

EFFICIENCY

-55 Cel

R-PBCC-N2

.405 W

1

30 V

3.5 A

SILICON

IEC-60134

PMEG3005AESF,315

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.00137 us

SCHOTTKY

1

CHIP CARRIER

30 V

150 Cel

-55 Cel

R-PBCC-N2

1

.405 W

1

30

260

SILICON

IEC-60134

PMEG4002AESF,315

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.2 A

.525 V

.00125 us

SCHOTTKY

80 uA

1

40 V

CHIP CARRIER

40 V

150 Cel

EFFICIENCY

-55 Cel

R-PBCC-N2

.405 W

1

40 V

3.5 A

SILICON

IEC-60134

BAW56M,315

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

.15 A

.001 V

.004 us

2

CHIP CARRIER

Rectifier Diodes

90 V

150 Cel

TIN

R-PBCC-N3

1

ANODE

Not Qualified

.25 W

4 A

e3

30

260

SILICON

PMEG4005ESF

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.5 A

.88 V

.00128 us

SCHOTTKY

6.5 uA

1

40 V

CHIP CARRIER

40 V

150 Cel

EFFICIENCY

-55 Cel

R-PBCC-N2

.405 W

1

40 V

3.5 A

SILICON

IEC-60134

PMEG6010AESB

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.0024 us

SCHOTTKY

1

CHIP CARRIER

60 V

150 Cel

-55 Cel

R-PBCC-N2

.525 W

1

SILICON

IEC-60134

PMEG6010AESB,315

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.0024 us

SCHOTTKY

1

CHIP CARRIER

60 V

150 Cel

-55 Cel

R-PBCC-N2

.525 W

1

SILICON

IEC-60134

RB520CS30L

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

SCHOTTKY

1

CHIP CARRIER

30 V

150 Cel

-65 Cel

TIN

R-PBCC-N2

1

Not Qualified

.315 W

1

e3

SILICON

AEC-Q101; IEC-60134

PMEG3005ESF,315

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.5 A

.72 V

.00142 us

SCHOTTKY

9 uA

1

30 V

CHIP CARRIER

30 V

150 Cel

EFFICIENCY

-55 Cel

R-PBCC-N2

.405 W

1

30 V

3.5 A

SILICON

IEC-60134

BAV170M

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

.32 A

1.25 V

3 us

.005 uA

2

75 V

CHIP CARRIER

85 V

150 Cel

GENERAL PURPOSE

-55 Cel

R-PBCC-N3

CATHODE

.325 W

LOW LEAKAGE CURRENT

1

.5 A

SILICON

AEC-Q101; IEC-60134

BAS70L

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.07 A

.41 V

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

70 V

150 Cel

Tin (Sn)

R-PBCC-N2

1

CATHODE

Not Qualified

1

.1 A

e3

30

260

SILICON

PMEG4005ESF,315

NXP Semiconductors

RECTIFIER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.5 A

.88 V

.00128 us

SCHOTTKY

6.5 uA

1

40 V

CHIP CARRIER

40 V

150 Cel

EFFICIENCY

-55 Cel

R-PBCC-N2

.405 W

1

40 V

3.5 A

SILICON

IEC-60134

Diodes & Rectifiers

Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.

A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.

Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.

Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.

Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.