Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.55 V |
.053 us |
SCHOTTKY |
150 uA |
1 |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
R-PBCC-N2 |
1 |
.51 W |
LOW LEAKAGE CURRENT |
1 |
19 A |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.495 V |
.063 us |
SCHOTTKY |
150 uA |
1 |
CHIP CARRIER |
30 V |
150 Cel |
EFFICIENCY |
R-PBCC-N2 |
1 |
.51 W |
LOW LEAKAGE CURRENT |
1 |
19 A |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
.56 V |
.053 us |
SCHOTTKY |
75 uA |
1 |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
R-PBCC-N2 |
1 |
1.4 W |
LOW LEAKAGE CURRENT |
1 |
19 A |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.2 A |
.004 us |
2 |
CYLINDRICAL |
135 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.625 W |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.004 us |
2 |
CYLINDRICAL |
135 Cel |
-55 Cel |
TIN LEAD |
O-PBCY-T3 |
Not Qualified |
.625 W |
TO-92 |
e0 |
SILICON |
||||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1 A |
.4 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
20 V |
150 Cel |
R-XBCC-N2 |
1 |
ANODE |
Not Qualified |
1.47 W |
1 |
18 A |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.35 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
150 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
R-PBCC-N2 |
1 |
.18 W |
1 |
2 A |
e4 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.2 A |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
R-XBCC-N2 |
1 |
Not Qualified |
.312 W |
1 |
2 A |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.6 V |
.003 us |
SCHOTTKY |
50 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
125 Cel |
GENERAL PURPOSE |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
.18 W |
LOW LEAKAGE CURRENT |
1 |
2 A |
e4 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.004 us |
1 |
CYLINDRICAL |
Rectifier Diodes |
100 V |
150 Cel |
Tin/Lead (Sn/Pb) |
R-PDSO-G2 |
1 |
Not Qualified |
.425 W |
FAST SWITCHING |
1 |
.5 A |
e0 |
30 |
235 |
SILICON |
||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.005 us |
SCHOTTKY |
2 uA |
1 |
25 V |
CHIP CARRIER |
30 V |
125 Cel |
FAST RECOVERY |
-65 Cel |
R-PBCC-N2 |
.2 W |
1 |
30 V |
.6 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.435 V |
.015 us |
SCHOTTKY |
75 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
85 Cel |
GENERAL PURPOSE |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
R-PBCC-N2 |
.48 W |
LOW LEAKAGE CURRENT |
1 |
2.2 A |
e4 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.63 V |
.013 us |
SCHOTTKY |
85 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
.48 W |
LOW LEAKAGE CURRENT |
1 |
2.5 A |
e4 |
30 |
260 |
SILICON |
||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1.2 V |
.004 us |
SCHOTTKY |
500 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
175 Cel |
EFFICIENCY |
-55 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
LOW LEAKAGE CURRENT |
1 |
2 A |
e4 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.62 V |
SCHOTTKY |
20 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
R-PBCC-N2 |
1 |
.38 W |
LOW LEAKAGE CURRENT |
1 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.1 A |
.37 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
125 Cel |
R-XBCC-N2 |
1 |
Not Qualified |
.312 W |
1 |
4 A |
30 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.8 V |
.011 us |
SCHOTTKY |
100 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
125 Cel |
GENERAL PURPOSE |
-55 Cel |
TIN COPPER SILVER |
R-PBCC-N2 |
1 |
LOW LEAKAGE CURRENT |
1 |
2 A |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.05 A |
.32 V |
SCHOTTKY |
1 |
CHIP CARRIER |
2 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
1 |
e4 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.54 V |
.011 us |
SCHOTTKY |
100 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
125 Cel |
GENERAL PURPOSE |
-55 Cel |
R-PBCC-N2 |
LOW LEAKAGE CURRENT |
1 |
1 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.6 V |
.008 us |
SCHOTTKY |
110 uA |
1 |
20 V |
CHIP CARRIER |
20 V |
125 Cel |
GENERAL PURPOSE |
-55 Cel |
R-PBCC-N2 |
.203 W |
LOW LEAKAGE CURRENT |
1 |
SILICON |
|||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
SCHOTTKY |
1 |
CHIP CARRIER |
40 V |
150 Cel |
-55 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
.3 W |
1 |
e4 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
THROUGH-HOLE |
3 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.7 A |
.01 us |
SCHOTTKY |
1 |
CYLINDRICAL |
30 V |
Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni) |
O-PBCY-T3 |
Not Qualified |
HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
TO-92 |
e2 |
SILICON |
|||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.63 V |
.013 us |
SCHOTTKY |
85 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
R-PBCC-N2 |
.48 W |
LOW LEAKAGE CURRENT |
1 |
2.5 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.36 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
150 Cel |
R-PBCC-N2 |
1.3 W |
1 |
10 A |
SILICON |
||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.5 V |
.008 us |
SCHOTTKY |
20 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
125 Cel |
GENERAL PURPOSE |
-55 Cel |
R-PBCC-N2 |
.552 W |
LOW LEAKAGE CURRENT |
1 |
SILICON |
||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.6 V |
SCHOTTKY |
5 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
.3 W |
LOW LEAKAGE CURRENT |
1 |
3 A |
e4 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1.2 V |
.04 us |
AVALANCHE |
20 uA |
1 |
CHIP CARRIER |
200 V |
150 Cel |
MEDIUM VOLTAGE FAST RECOVERY |
R-XBCC-N3 |
CATHODE |
1 |
250 A |
SILICON |
EUROPEAN SPACE AGENCY |
|||||||||||||||||||||||||||||||
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1.2 V |
.04 us |
AVALANCHE |
20 uA |
1 |
CHIP CARRIER |
200 V |
150 Cel |
MEDIUM VOLTAGE FAST RECOVERY |
R-XBCC-N3 |
CATHODE |
1 |
250 A |
SILICON |
||||||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
BALL |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 V |
SCHOTTKY |
1 |
GRID ARRAY |
Rectifier Diodes |
20 V |
85 Cel |
-30 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
R-PBGA-B2 |
Not Qualified |
1 |
e1 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
15 A |
1.2 V |
.04 us |
AVALANCHE |
20 uA |
1 |
CHIP CARRIER |
200 V |
150 Cel |
FAST RECOVERY |
-55 Cel |
R-XBCC-N3 |
CATHODE |
1 |
250 A |
SILICON |
EUROPEAN SPACE AGENCY |
||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
METAL |
SINGLE |
15 A |
1.2 V |
.04 us |
20 uA |
1 |
CHIP CARRIER |
Rectifier Diodes |
200 V |
150 Cel |
FAST RECOVERY |
-55 Cel |
R-MBCC-N3 |
1 |
250 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
6 A |
.035 us |
1 |
CHIP CARRIER |
150 V |
175 Cel |
POWER ULTRA FAST RECOVERY |
R-XBCC-N2 |
Not Qualified |
FREE WHEELING DIODE |
1 |
100 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
20 A |
1.035 V |
SCHOTTKY |
10 uA |
2 |
200 V |
CHIP CARRIER |
200 V |
175 Cel |
POWER |
R-XBCC-N3 |
CATHODE |
1 |
220 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
COMMON CATHODE, 2 ELEMENTS |
40 A |
1.04 V |
SCHOTTKY |
14 uA |
2 |
150 V |
CHIP CARRIER |
150 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
R-CBCC-N3 |
CATHODE |
1 |
190 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
40 A |
.82 V |
SCHOTTKY |
25 uA |
2 |
CHIP CARRIER |
45 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
Gold (Au) |
R-XBCC-N3 |
CATHODE |
1 |
200 A |
e4 |
SILICON |
||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
20 A |
1 V |
SCHOTTKY |
30 uA |
1 |
100 V |
CHIP CARRIER |
100 V |
175 Cel |
MEDIUM VOLTAGE POWER |
-65 Cel |
R-XBCC-N3 |
CATHODE |
LOW NOISE |
1 |
250 A |
SILICON |
MIL-STD-750 |
|||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
2.5 A |
.8 V |
.03 us |
1 |
CHIP CARRIER |
Rectifier Diodes |
150 V |
175 Cel |
POWER ULTRA FAST RECOVERY |
R-XBCC-N2 |
Not Qualified |
FREE WHEELING DIODE |
1 |
35 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
2.5 A |
.8 V |
.03 us |
1 |
CHIP CARRIER |
Rectifier Diodes |
150 V |
175 Cel |
POWER ULTRA FAST RECOVERY |
R-XBCC-N2 |
Not Qualified |
FREE WHEELING DIODE |
1 |
35 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
40 A |
.82 V |
SCHOTTKY |
25 uA |
2 |
CHIP CARRIER |
45 V |
GENERAL PURPOSE |
-65 Cel |
Gold (Au) |
R-XBCC-N3 |
CATHODE |
1 |
200 A |
e4 |
SILICON |
|||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
SCHOTTKY |
1 |
CHIP CARRIER |
100 V |
175 Cel |
POWER |
R-XBCC-N3 |
CATHODE |
Not Qualified |
LOW NOISE |
1 |
250 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
20 A |
1.035 V |
SCHOTTKY |
10 uA |
2 |
200 V |
CHIP CARRIER |
200 V |
175 Cel |
POWER |
R-XBCC-N3 |
CATHODE |
1 |
220 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
2.5 A |
.8 V |
.03 us |
1 |
CHIP CARRIER |
Rectifier Diodes |
150 V |
175 Cel |
POWER ULTRA FAST RECOVERY |
R-XBCC-N2 |
Not Qualified |
FREE WHEELING DIODE |
1 |
35 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
20 A |
.78 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
100 V |
175 Cel |
POWER |
GOLD |
R-XBCC-N3 |
CATHODE |
Not Qualified |
LOW NOISE |
1 |
250 A |
e4 |
SILICON |
||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
COMMON CATHODE, 2 ELEMENTS |
30 A |
.99 V |
SCHOTTKY |
14 uA |
2 |
150 V |
CHIP CARRIER |
150 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
R-CBCC-N3 |
CATHODE |
1 |
190 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
ESA/SCC 5106/023 |
||||||||||||||||||||||||||
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
10 A |
SCHOTTKY |
2 |
CHIP CARRIER |
45 V |
GENERAL PURPOSE |
GOLD |
R-XBCC-N3 |
Not Qualified |
1 |
200 A |
e4 |
SILICON |
|||||||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
COMMON CATHODE, 2 ELEMENTS |
30 A |
.99 V |
SCHOTTKY |
14 uA |
2 |
150 V |
CHIP CARRIER |
150 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
R-CBCC-N3 |
CATHODE |
1 |
190 A |
SILICON |
ESA/SCC 5106/023 |
||||||||||||||||||||||||||||
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
10 A |
.88 V |
SCHOTTKY |
100 uA |
2 |
45 V |
CHIP CARRIER |
45 V |
175 Cel |
MEDIUM VOLTAGE POWER |
-65 Cel |
R-XBCC-N3 |
CATHODE |
LOW NOISE |
1 |
200 A |
SILICON |
MIL-STD-750 |
||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
COMMON CATHODE, 2 ELEMENTS |
30 A |
.99 V |
SCHOTTKY |
14 uA |
2 |
150 V |
CHIP CARRIER |
150 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
R-CBCC-N3 |
CATHODE |
1 |
190 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.