Microchip Technology Diodes & Rectifiers 349

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Working Test Current Config Frequency Band Nominal Reference Voltage Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Nominal Regulation Current (Ireg) Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Application Maximum Dynamic Impedance Maximum Limiting Voltage Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases JEDEC-95 Code Diode Cap Tolerance Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

MBRS140T3

Microchip Technology

RECTIFIER DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1 A

SCHOTTKY

1

SMALL OUTLINE

40 V

150 Cel

-55 Cel

R-PDSO-C2

Not Qualified

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

JANTX1N4148UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.005 us

1

LONG FORM

200 Cel

-65 Cel

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

1

e0

SILICON

MIL-19500/116L

MBRS1100T3

Microchip Technology

RECTIFIER DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1 A

.84 V

SCHOTTKY

100 uA

1

100 V

SMALL OUTLINE

100 V

175 Cel

-55 Cel

TIN LEAD

R-PDSO-C2

Not Qualified

1

DO-214BA

40 A

e0

SILICON

CDLL4148E3

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.005 us

1

LONG FORM

O-LELF-R2

ISOLATED

METALLURGICALLY BONDED

1

DO-213AA

SILICON

B560C-13-F

Microchip Technology

RECTIFIER DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5 A

SCHOTTKY

1

SMALL OUTLINE

60 V

175 Cel

GENERAL PURPOSE

-55 Cel

R-PDSO-C2

1

DO-214AB

250 A

SILICON

MBR30045CT

Microchip Technology

RECTIFIER DIODE

UPPER

UNSPECIFIED

2

NO

RECTANGULAR

UNSPECIFIED

COMMON CATHODE, 2 ELEMENTS

150 A

SCHOTTKY

2

FLANGE MOUNT

45 V

125 Cel

GENERAL PURPOSE

-55 Cel

R-XUFM-X2

CATHODE

Not Qualified

1

2000 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

MBRS360T3

Microchip Technology

RECTIFIER DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

3 A

.62 V

SCHOTTKY

100 uA

1

60 V

SMALL OUTLINE

60 V

175 Cel

GENERAL PURPOSE

-55 Cel

TIN LEAD

R-PDSO-C2

Not Qualified

FREE WHEELING DIODE

1

DO-214AB

150 A

e0

SILICON

MBR300100CT

Microchip Technology

RECTIFIER DIODE

UPPER

UNSPECIFIED

2

NO

RECTANGULAR

UNSPECIFIED

COMMON CATHODE, 2 ELEMENTS

150 A

SCHOTTKY

2

FLANGE MOUNT

100 V

175 Cel

GENERAL PURPOSE

-55 Cel

R-XUFM-X2

CATHODE

Not Qualified

1

2000 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

MURS120T3

Microchip Technology

RECTIFIER DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1 A

.03 us

1

SMALL OUTLINE

200 V

175 Cel

-55 Cel

R-PDSO-C2

Not Qualified

1

DO-214BA

NOT SPECIFIED

NOT SPECIFIED

SILICON

JANTX1N5811US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

.03 us

1

LONG FORM

150 V

175 Cel

ULTRA FAST RECOVERY

-65 Cel

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

5 W

HIGH RELIABILITY, METALLURGICALLY BONDED

1

125 A

e0

SILICON

MIL-19500

JANTX1N5806US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

2.5 A

.025 us

1

LONG FORM

150 V

ULTRA FAST RECOVERY POWER

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

1

35 A

e0

SILICON

MIL-19500/477F

MURS320T3

Microchip Technology

RECTIFIER DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

3 A

.03 us

1

SMALL OUTLINE

200 V

175 Cel

ULTRA FAST RECOVERY

-55 Cel

R-PDSO-C2

Not Qualified

1

DO-214AB

100 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

MBR20200CT

Microchip Technology

RECTIFIER DIODE

SINGLE

THROUGH-HOLE

3

NO

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

10 A

SCHOTTKY

2

FLANGE MOUNT

200 V

GENERAL PURPOSE

TIN LEAD

R-PSFM-T3

CATHODE

Not Qualified

1

TO-220AB

225 A

e0

SILICON

JANTX1N4148-1

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

UNSPECIFIED

SINGLE

.2 A

.005 us

1

LONG FORM

75 V

TIN LEAD

O-XALF-W2

ISOLATED

Qualified

1

DO-35

e0

SILICON

MIL-19500/116L

MBR30035CT

Microchip Technology

RECTIFIER DIODE

UPPER

UNSPECIFIED

2

NO

RECTANGULAR

UNSPECIFIED

COMMON CATHODE, 2 ELEMENTS

150 A

SCHOTTKY

2

FLANGE MOUNT

35 V

125 Cel

GENERAL PURPOSE

-55 Cel

R-XUFM-X2

CATHODE

Not Qualified

1

2000 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

STPS24045TV

Microchip Technology

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

160 A

SCHOTTKY

2

FLANGE MOUNT

45 V

150 Cel

GENERAL PURPOSE

-55 Cel

R-PUFM-X4

ISOLATED

Not Qualified

1

2500 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

1N5824

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

UNSPECIFIED

SINGLE

5 A

.49 V

SCHOTTKY

1

LONG FORM

Rectifier Diodes

30 V

125 Cel

GENERAL PURPOSE

-65 Cel

O-XALF-W2

ISOLATED

Not Qualified

1

500 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

UPS5819E3/TR7

Microchip Technology

RECTIFIER DIODE

SINGLE

GULL WING

1

YES

SQUARE

PLASTIC/EPOXY

SINGLE

1 A

.55 V

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

40 V

150 Cel

-55 Cel

MATTE TIN

S-PSSO-G1

CATHODE

FREE WHEELING DIODE, LOW POWER LOSS

1

DO-216AA

50 A

e3

30

260

SILICON

UPS140E3/TR7

Microchip Technology

RECTIFIER DIODE

DUAL

GULL WING

1

YES

SQUARE

PLASTIC/EPOXY

SINGLE

1 A

SCHOTTKY

1

SMALL OUTLINE

40 V

125 Cel

-55 Cel

MATTE TIN

S-PDSO-G1

ANODE AND CATHODE

Not Qualified

1

DO-216AA

e3

SILICON

JANTX1N5811

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 A

.03 us

1

LONG FORM

150 V

175 Cel

ULTRA FAST RECOVERY

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Qualified

HIGH RELIABILITY, METALLURGICALLY BONDED

1

125 A

e0

SILICON

MIL-19500

MBR30030CT

Microchip Technology

RECTIFIER DIODE

UPPER

UNSPECIFIED

2

NO

RECTANGULAR

UNSPECIFIED

COMMON CATHODE, 2 ELEMENTS

150 A

SCHOTTKY

2

FLANGE MOUNT

35 V

125 Cel

GENERAL PURPOSE

-55 Cel

R-XUFM-X2

CATHODE

Not Qualified

1

2000 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

JAN1N4148UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.005 us

1

LONG FORM

200 Cel

-65 Cel

TIN LEAD

O-LELF-R2

1

ISOLATED

Qualified

1

e0

SILICON

MIL-19500/116L

JANTX1N5819UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

UNSPECIFIED

SINGLE

1 A

SCHOTTKY

1

LONG FORM

45 V

TIN LEAD

O-XELF-R2

1

ISOLATED

Qualified

METALLURGICALLY BONDED

1

DO-213AB

e0

SILICON

MIL-19500/586F

JAN1N4148-1

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

UNSPECIFIED

SINGLE

.2 A

.8 V

.005 us

1

LONG FORM

Rectifier Diodes

75 V

200 Cel

-65 Cel

TIN LEAD

O-XALF-W2

ISOLATED

Qualified

1

DO-35

2 A

e0

SILICON

MIL-19500/116L

JAN1N5811US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

.875 V

.03 us

1

LONG FORM

Rectifier Diodes

150 V

175 Cel

ULTRA FAST RECOVERY

-65 Cel

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

5 W

HIGH RELIABILITY

1

125 A

e0

SILICON

MIL-19500/477

JANTX1N5552US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

1

LONG FORM

175 Cel

POWER

-65 Cel

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

1

100 A

e0

SILICON

MIL-19500/420G

MBR20100CTP

Microchip Technology

RECTIFIER DIODE

SINGLE

THROUGH-HOLE

3

NO

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

10 A

SCHOTTKY

2

FLANGE MOUNT

100 V

EFFICIENCY

TIN LEAD

R-PSFM-T3

CATHODE

Not Qualified

LOW POWER LOSS

1

TO-220AB

225 A

e0

SILICON

JANS1N5811US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

.03 us

1

LONG FORM

150 V

175 Cel

ULTRA FAST RECOVERY

-65 Cel

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

5 W

HIGH RELIABILITY, METALLURGICALLY BONDED

1

125 A

e0

SILICON

MIL-19500

MBR20100CTE3/TU

Microchip Technology

RECTIFIER DIODE

SINGLE

THROUGH-HOLE

3

NO

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

10 A

.85 V

SCHOTTKY

250 uA

2

FLANGE MOUNT

100 V

175 Cel

EFFICIENCY

-55 Cel

MATTE TIN

R-PSFM-T3

CATHODE

LOW POWER LOSS

1

TO-220AB

225 A

e3

SILICON

JANTXV1N5811US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

.03 us

1

LONG FORM

150 V

175 Cel

ULTRA FAST RECOVERY

-65 Cel

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

5 W

HIGH RELIABILITY, METALLURGICALLY BONDED

1

125 A

e0

SILICON

MIL-19500

JAN1N645-1

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.4 A

1

LONG FORM

225 V

150 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Qualified

.5 W

METALLURGICALLY BONDED

1

DO-35

e0

SILICON

MIL-19500

JANS1N5806US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

.025 us

1

LONG FORM

150 V

175 Cel

-65 Cel

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

3 W

HIGH RELIABILITY

1

e0

SILICON

MIL-19500

JANTX1N5552

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

UNSPECIFIED

SINGLE

5 A

AVALANCHE

1

LONG FORM

600 V

POWER

TIN LEAD

O-XALF-W2

ISOLATED

Qualified

1

100 A

e0

SILICON

MIL-19500/420G

1N4148-1

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.2 A

.005 us

1

LONG FORM

75 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.5 W

METALLURGICALLY BONDED

1

DO-35

e0

SILICON

ESA/SCC 5101/023

LSM115JE3/TR13

Microchip Technology

RECTIFIER DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1 A

SCHOTTKY

1

SMALL OUTLINE

15 V

100 Cel

-55 Cel

MATTE TIN

R-PDSO-C2

1

LOW POWER LOSS

1

DO-214BA

e3

SILICON

MBR15100CT

Microchip Technology

RECTIFIER DIODE

SINGLE

THROUGH-HOLE

3

NO

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

10 A

.66 V

SCHOTTKY

2

FLANGE MOUNT

Rectifier Diodes

100 V

175 Cel

EFFICIENCY

-55 Cel

R-PSFM-T3

CATHODE

Not Qualified

LOW POWER LOSS

1

TO-220AB

225 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

JANTXV1N4148UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

.005 us

1

LONG FORM

75 V

TIN LEAD

O-LELF-R2

1

ISOLATED

Qualified

1

DO-213AA

e0

SILICON

MIL-19500/116L

JANS1N5819UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

UNSPECIFIED

SINGLE

1 A

SCHOTTKY

1

LONG FORM

45 V

TIN LEAD

O-XELF-R2

1

ISOLATED

Qualified

METALLURGICALLY BONDED

1

DO-213AB

e0

SILICON

MIL-19500/586F

1N4148UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1.2 V

.005 us

.5 uA

1

75 V

LONG FORM

75 V

175 Cel

SWITCHING

-65 Cel

TIN LEAD

O-LELF-R2

METALLURGICALLY BONDED

1

DO-213AA

100 V

2 A

e0

20

235

SILICON

MIL-19500

JANTX1N5711UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.033 A

SCHOTTKY

1

LONG FORM

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

METALLURGICALLY BONDED

1

DO-213AA

e0

SILICON

MIL-19500/444

1N5811US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

.03 us

1

LONG FORM

150 V

175 Cel

ULTRA FAST RECOVERY

-65 Cel

TIN LEAD OVER NICKEL

O-LELF-R2

ISOLATED

HIGH RELIABILITY, METALLURGICALLY BONDED

1

125 A

e0

SILICON

JANTXV1N4148-1

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

UNSPECIFIED

SINGLE

.2 A

.005 us

1

LONG FORM

75 V

TIN LEAD

O-XALF-W2

ISOLATED

Qualified

1

DO-35

e0

SILICON

MIL-19500/116L

JANTX1N5618US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

2 us

1

LONG FORM

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

METALLURGICALLY BONDED

1

e0

SILICON

MIL-19500/427K

JAN1N914

Microchip Technology

RECTIFIER DIODE

NO

.075 A

1

LONG FORM

75 V

TIN LEAD

Qualified

1

DO-35

e0

SILICON

JANTX1N4148-1/TR

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.2 A

1.2 V

.005 us

.5 uA

1

75 V

LONG FORM

75 V

175 Cel

VERY FAST RECOVERY

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

1

DO-204AH

2 A

e0

SILICON

MIL-19500

JANTX1N645-1

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.4 A

1

LONG FORM

225 V

150 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Qualified

.5 W

METALLURGICALLY BONDED

1

DO-35

e0

SILICON

MIL-19500

JANTXV1N5819UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

UNSPECIFIED

SINGLE

1 A

SCHOTTKY

1

LONG FORM

45 V

TIN LEAD

O-XELF-R2

1

ISOLATED

Qualified

METALLURGICALLY BONDED

1

DO-213AB

e0

SILICON

MIL-19500/586F

1N5819UR-1E3

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

.34 V

SCHOTTKY

1

LONG FORM

Rectifier Diodes

45 V

125 Cel

-65 Cel

O-LELF-R2

ISOLATED

METALLURGICALLY BONDED

1

DO-213AB

25 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

Diodes & Rectifiers

Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.

A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.

Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.

Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.

Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.