Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
3 A |
SCHOTTKY |
1 |
LONG FORM |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
1 |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
GULL WING |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
15 V |
100 Cel |
-55 Cel |
TIN LEAD |
R-PSSO-G1 |
CATHODE |
Not Qualified |
1 |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
2 |
NO |
RECTANGULAR |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
150 A |
SCHOTTKY |
2 |
FLANGE MOUNT |
40 V |
125 Cel |
GENERAL PURPOSE |
-55 Cel |
R-XUFM-X2 |
CATHODE |
Not Qualified |
1 |
2000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1.2 V |
.005 us |
.5 uA |
1 |
75 V |
LONG FORM |
75 V |
175 Cel |
SWITCHING |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AA |
100 V |
2 A |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
2.5 A |
.025 us |
1 |
LONG FORM |
150 V |
ULTRA FAST RECOVERY POWER |
Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
35 A |
e0 |
SILICON |
MIL-19500/477F |
|||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1.2 V |
.005 us |
.5 uA |
1 |
75 V |
LONG FORM |
75 V |
175 Cel |
SWITCHING |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
METALLURGICALLY BONDED |
1 |
DO-213AA |
100 V |
2 A |
e3 |
SILICON |
MIL-19500 |
||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1.2 V |
.005 us |
.5 uA |
1 |
75 V |
LONG FORM |
75 V |
175 Cel |
SWITCHING |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
.5 W |
METALLURGICALLY BONDED |
1 |
DO-213AA |
100 V |
e3 |
SILICON |
MIL-19500 |
||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
16 A |
SCHOTTKY |
1 |
FLANGE MOUNT |
45 V |
175 Cel |
EFFICIENCY |
-55 Cel |
R-PSFM-T2 |
CATHODE |
Not Qualified |
LOW POWER LOSS |
1 |
TO-220AC |
300 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.025 us |
AVALANCHE |
1 |
LONG FORM |
150 V |
175 Cel |
-65 Cel |
TIN LEAD OVER NICKEL |
O-LELF-R2 |
ISOLATED |
HIGH RELIABILITY |
1 |
e0 |
SILICON |
|||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.875 V |
.025 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
ISOLATED |
HIGH RELIABLITY |
1 |
35 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
1 A |
.55 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
-55 Cel |
MATTE TIN |
S-PSSO-G1 |
CATHODE |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-216AA |
50 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
1.2 V |
.005 us |
.5 uA |
1 |
LONG FORM |
75 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-XELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
2.5 A |
e0 |
SILICON |
MIL-19500/578E |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.033 A |
SCHOTTKY |
1 |
LONG FORM |
50 V |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AA |
e0 |
SILICON |
MIL-19500/444 |
|||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
40 V |
125 Cel |
-55 Cel |
MATTE TIN |
S-PSSO-G1 |
CATHODE |
Not Qualified |
1 |
DO-216AA |
e3 |
SILICON |
||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
45 V |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AB |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.03 us |
1 |
LONG FORM |
ULTRA FAST RECOVERY |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY, METALLURGICALLY BONDED |
1 |
125 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
2.5 A |
.025 us |
1 |
LONG FORM |
ULTRA FAST RECOVERY POWER |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
35 A |
e0 |
SILICON |
MIL-19500/477F |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
160 A |
SCHOTTKY |
2 |
FLANGE MOUNT |
45 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
TIN LEAD |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
1 |
2500 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
SCHOTTKY |
1 |
LONG FORM |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
80 A |
e0 |
SILICON |
MIL-19500/620E |
||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
120 A |
.95 V |
.07 us |
SCHOTTKY |
1 |
FLANGE MOUNT |
Rectifier Diodes |
200 V |
150 Cel |
HIGH VOLTAGE ULTRA FAST SOFT RECOVERY |
-55 Cel |
TIN SILVER COPPER |
R-PSFM-T2 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, SNUBBER DIODE, LOW LEAKAGE CURRENT, LOW NOISE, HIGH RELIABILITY |
1 |
TO-247 |
1000 A |
e1 |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.15 us |
1 |
LONG FORM |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/429J |
||||||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
16 A |
SCHOTTKY |
1 |
FLANGE MOUNT |
45 V |
175 Cel |
EFFICIENCY |
-55 Cel |
R-PSFM-T2 |
CATHODE |
Not Qualified |
LOW POWER LOSS |
1 |
TO-220AC |
300 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
5 A |
AVALANCHE |
1 |
LONG FORM |
400 V |
POWER |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
100 A |
e0 |
SILICON |
MIL-19500/420G |
|||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.033 A |
SCHOTTKY |
1 |
LONG FORM |
50 V |
TIN LEAD |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AA |
e0 |
SILICON |
|||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
DUAL |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
1 A |
.36 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
125 Cel |
-55 Cel |
MATTE TIN |
S-PDSO-G1 |
CATHODE |
Not Qualified |
1 |
DO-216AA |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
20 V |
125 Cel |
-55 Cel |
MATTE TIN |
S-PSSO-G1 |
CATHODE |
Not Qualified |
1 |
DO-216AA |
e3 |
SILICON |
||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
30 V |
150 Cel |
-55 Cel |
TIN LEAD |
R-PDSO-C2 |
Not Qualified |
1 |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
AVALANCHE |
1 |
LONG FORM |
400 V |
POWER |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
100 A |
e0 |
SILICON |
MIL-19500/420G |
|||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.7 V |
SCHOTTKY |
.1 uA |
1 |
40 V |
LONG FORM |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
O-LELF-R2 |
ISOLATED |
HIGH RELIABILITY |
1 |
80 A |
SILICON |
MIL-19500 |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
1.2 V |
.005 us |
.5 uA |
1 |
LONG FORM |
75 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-XELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
2.5 A |
e0 |
SILICON |
MIL-19500/578E |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
GULL WING |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
40 V |
125 Cel |
-55 Cel |
R-PSSO-G1 |
CATHODE |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
120 A |
.07 us |
SCHOTTKY |
2 |
FLANGE MOUNT |
200 V |
150 Cel |
HIGH VOLTAGE ULTRA FAST SOFT RECOVERY |
-55 Cel |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW NOISE, HIGH RELIABILITY |
1 |
1000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
.8 V |
SCHOTTKY |
50 uA |
2 |
FLANGE MOUNT |
100 V |
175 Cel |
EFFICIENCY |
-65 Cel |
R-PSFM-T3 |
CATHODE |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
TO-220AB |
275 A |
SILICON |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.4 A |
1 |
LONG FORM |
600 V |
150 Cel |
-65 Cel |
Tin/Lead (Sn63Pb37) |
O-LALF-W2 |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
1 |
DO-35 |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
1.3 V |
2 us |
.5 uA |
1 |
600 V |
LONG FORM |
600 V |
200 Cel |
GENERAL PURPOSE |
-65 Cel |
O-LALF-W2 |
ISOLATED |
METALLURGICALLY BONDED |
1 |
660 V |
30 A |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
3 A |
.875 V |
.03 us |
5 uA |
1 |
150 V |
LONG FORM |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
O-LALF-W2 |
ISOLATED |
HIGH RELIABILITY |
1 |
160 V |
125 A |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.033 A |
.41 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
70 V |
150 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
METALLURGICALLY BONDED |
1 |
DO-213AA |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
20 V |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY |
1 |
DO-41 |
SILICON |
|||||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.2 A |
1 |
LONG FORM |
Tin/Lead (Sn/Pb) |
O-LALF-W2 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/118F |
|||||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
.15 us |
AVALANCHE |
1 |
LONG FORM |
200 V |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/429J |
||||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
100 A |
1.5 V |
.05 us |
500 uA |
2 |
400 V |
FLANGE MOUNT |
Other Diodes |
400 V |
150 Cel |
ULTRA FAST SOFT RECOVERY |
-55 Cel |
TIN SILVER COPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW NOISE, SNUBBER DIODE |
1 |
1000 A |
e1 |
SILICON |
UL RECOGNIZED |
|||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
5 A |
SCHOTTKY |
1 |
LONG FORM |
30 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
O-XALF-W2 |
ISOLATED |
1 |
500 A |
SILICON |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
60 V |
GENERAL PURPOSE |
TIN LEAD |
R-PDSO-C2 |
Not Qualified |
1 |
DO-214AB |
150 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
5 A |
1 |
LONG FORM |
175 Cel |
POWER |
-65 Cel |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
100 A |
e0 |
SILICON |
MIL-19500/420G |
|||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
95 A |
2.5 V |
.3 us |
250 uA |
2 |
1000 V |
FLANGE MOUNT |
Other Diodes |
1000 V |
175 Cel |
ULTRA FAST SOFT RECOVERY |
-55 Cel |
TIN SILVER COPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW NOISE, SNUBBER DIODE |
1 |
1000 A |
e1 |
SILICON |
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Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.03 us |
1 |
LONG FORM |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
HIGH RELIABILITY, METALLURGICALLY BONDED |
1 |
125 A |
e0 |
SILICON |
MIL-19500 |
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Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
2.5 A |
.025 us |
1 |
LONG FORM |
ULTRA FAST RECOVERY POWER |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
35 A |
SILICON |
MIL-19500/477F |
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Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
SCHOTTKY |
1 |
LONG FORM |
40 V |
GENERAL PURPOSE |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
80 A |
e0 |
SILICON |
MIL-19500/620E |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.