Microchip Technology Diodes & Rectifiers 349

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Working Test Current Config Frequency Band Nominal Reference Voltage Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Nominal Regulation Current (Ireg) Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Application Maximum Dynamic Impedance Maximum Limiting Voltage Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases JEDEC-95 Code Diode Cap Tolerance Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

1N5822/TR

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 A

SCHOTTKY

1

LONG FORM

40 V

125 Cel

GENERAL PURPOSE

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

1

e0

SILICON

UPS115UE3-TR7

Microchip Technology

RECTIFIER DIODE

SINGLE

GULL WING

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1 A

SCHOTTKY

1

SMALL OUTLINE

15 V

100 Cel

-55 Cel

TIN LEAD

R-PSSO-G1

CATHODE

Not Qualified

1

e0

SILICON

MBR30040CT

Microchip Technology

RECTIFIER DIODE

UPPER

UNSPECIFIED

2

NO

RECTANGULAR

UNSPECIFIED

COMMON CATHODE, 2 ELEMENTS

150 A

SCHOTTKY

2

FLANGE MOUNT

40 V

125 Cel

GENERAL PURPOSE

-55 Cel

R-XUFM-X2

CATHODE

Not Qualified

1

2000 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

1N4148UR-1-TR

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1.2 V

.005 us

.5 uA

1

75 V

LONG FORM

75 V

175 Cel

SWITCHING

-65 Cel

TIN LEAD

O-LELF-R2

Not Qualified

METALLURGICALLY BONDED

1

DO-213AA

100 V

2 A

e0

SILICON

MIL-19500

JAN1N5806US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

2.5 A

.025 us

1

LONG FORM

150 V

ULTRA FAST RECOVERY POWER

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

O-LELF-R2

ISOLATED

Qualified

1

35 A

e0

SILICON

MIL-19500/477F

1N4148UR-1E3

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1.2 V

.005 us

.5 uA

1

75 V

LONG FORM

75 V

175 Cel

SWITCHING

-65 Cel

MATTE TIN

O-LELF-R2

METALLURGICALLY BONDED

1

DO-213AA

100 V

2 A

e3

SILICON

MIL-19500

1N4148UR-1-E3/TR

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.2 A

1.2 V

.005 us

.5 uA

1

75 V

LONG FORM

75 V

175 Cel

SWITCHING

-65 Cel

MATTE TIN

O-LELF-R2

.5 W

METALLURGICALLY BONDED

1

DO-213AA

100 V

e3

SILICON

MIL-19500

MBR1545

Microchip Technology

RECTIFIER DIODE

SINGLE

THROUGH-HOLE

2

NO

RECTANGULAR

PLASTIC/EPOXY

SINGLE

16 A

SCHOTTKY

1

FLANGE MOUNT

45 V

175 Cel

EFFICIENCY

-55 Cel

R-PSFM-T2

CATHODE

Not Qualified

LOW POWER LOSS

1

TO-220AC

300 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

1N5806US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

.025 us

AVALANCHE

1

LONG FORM

150 V

175 Cel

-65 Cel

TIN LEAD OVER NICKEL

O-LELF-R2

ISOLATED

HIGH RELIABILITY

1

e0

SILICON

1N5806USE3

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

.875 V

.025 us

AVALANCHE

1

LONG FORM

Rectifier Diodes

150 V

175 Cel

ULTRA FAST RECOVERY

-65 Cel

MATTE TIN

O-LELF-R2

ISOLATED

HIGH RELIABLITY

1

35 A

e3

SILICON

UPS5819E3/TR13

Microchip Technology

RECTIFIER DIODE

SINGLE

GULL WING

1

YES

SQUARE

PLASTIC/EPOXY

SINGLE

1 A

.55 V

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

40 V

150 Cel

-55 Cel

MATTE TIN

S-PSSO-G1

CATHODE

FREE WHEELING DIODE, LOW POWER LOSS

1

DO-216AA

50 A

e3

30

260

SILICON

JANS1N6642US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

UNSPECIFIED

SINGLE

.3 A

1.2 V

.005 us

.5 uA

1

LONG FORM

75 V

175 Cel

-65 Cel

TIN LEAD

O-XELF-R2

ISOLATED

Qualified

METALLURGICALLY BONDED

1

2.5 A

e0

SILICON

MIL-19500/578E

JANTXV1N5711UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.033 A

SCHOTTKY

1

LONG FORM

50 V

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

METALLURGICALLY BONDED

1

DO-213AA

e0

SILICON

MIL-19500/444

UPS140E3/TR13

Microchip Technology

RECTIFIER DIODE

SINGLE

GULL WING

1

YES

SQUARE

PLASTIC/EPOXY

SINGLE

1 A

SCHOTTKY

1

SMALL OUTLINE

40 V

125 Cel

-55 Cel

MATTE TIN

S-PSSO-G1

CATHODE

Not Qualified

1

DO-216AA

e3

SILICON

1N5819UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

SCHOTTKY

1

LONG FORM

45 V

TIN LEAD

O-LELF-R2

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

DO-213AB

e0

SILICON

1N5811US-TR

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

.03 us

1

LONG FORM

ULTRA FAST RECOVERY

TIN LEAD

O-LELF-R2

ISOLATED

Not Qualified

HIGH RELIABILITY, METALLURGICALLY BONDED

1

125 A

e0

SILICON

JANTXV1N5806US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

2.5 A

.025 us

1

LONG FORM

ULTRA FAST RECOVERY POWER

Tin/Lead (Sn/Pb)

O-LELF-R2

ISOLATED

Qualified

1

35 A

e0

SILICON

MIL-19500/477F

DSS2X121-0045B

Microchip Technology

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

160 A

SCHOTTKY

2

FLANGE MOUNT

45 V

150 Cel

GENERAL PURPOSE

-55 Cel

TIN LEAD

R-PUFM-X4

ISOLATED

Not Qualified

1

2500 A

e0

SILICON

JANTX1N5822US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

SCHOTTKY

1

LONG FORM

40 V

125 Cel

GENERAL PURPOSE

-65 Cel

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

METALLURGICALLY BONDED

1

80 A

e0

SILICON

MIL-19500/620E

APT100S20BG

Microchip Technology

RECTIFIER DIODE

SINGLE

THROUGH-HOLE

2

NO

RECTANGULAR

PLASTIC/EPOXY

SINGLE

120 A

.95 V

.07 us

SCHOTTKY

1

FLANGE MOUNT

Rectifier Diodes

200 V

150 Cel

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

-55 Cel

TIN SILVER COPPER

R-PSFM-T2

CATHODE

Not Qualified

FREE WHEELING DIODE, SNUBBER DIODE, LOW LEAKAGE CURRENT, LOW NOISE, HIGH RELIABILITY

1

TO-247

1000 A

e1

SILICON

JANTX1N5615US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

1 A

.15 us

1

LONG FORM

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

1

e0

SILICON

MIL-19500/429J

MBR1540

Microchip Technology

RECTIFIER DIODE

SINGLE

THROUGH-HOLE

2

NO

RECTANGULAR

PLASTIC/EPOXY

SINGLE

16 A

SCHOTTKY

1

FLANGE MOUNT

45 V

175 Cel

EFFICIENCY

-55 Cel

R-PSFM-T2

CATHODE

Not Qualified

LOW POWER LOSS

1

TO-220AC

300 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

JANTX1N5551

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

UNSPECIFIED

SINGLE

5 A

AVALANCHE

1

LONG FORM

400 V

POWER

TIN LEAD

O-XALF-W2

ISOLATED

Qualified

1

100 A

e0

SILICON

MIL-19500/420G

1N5711UR-1

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.033 A

SCHOTTKY

1

LONG FORM

50 V

TIN LEAD

O-LELF-R2

1

ISOLATED

Not Qualified

METALLURGICALLY BONDED

1

DO-213AA

e0

SILICON

UPS140E3

Microchip Technology

RECTIFIER DIODE

DUAL

GULL WING

1

YES

SQUARE

PLASTIC/EPOXY

SINGLE

1 A

.36 V

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

40 V

125 Cel

-55 Cel

MATTE TIN

S-PDSO-G1

CATHODE

Not Qualified

1

DO-216AA

50 A

e3

SILICON

UPS120E3/TR7

Microchip Technology

RECTIFIER DIODE

SINGLE

GULL WING

1

YES

SQUARE

PLASTIC/EPOXY

SINGLE

1 A

SCHOTTKY

1

SMALL OUTLINE

20 V

125 Cel

-55 Cel

MATTE TIN

S-PSSO-G1

CATHODE

Not Qualified

1

DO-216AA

e3

SILICON

MBRS130T3

Microchip Technology

RECTIFIER DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1 A

SCHOTTKY

1

SMALL OUTLINE

30 V

150 Cel

-55 Cel

TIN LEAD

R-PDSO-C2

Not Qualified

1

e0

SILICON

JANTX1N5551US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

AVALANCHE

1

LONG FORM

400 V

POWER

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

1

100 A

e0

SILICON

MIL-19500/420G

JANTX1N5822USTR

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

.7 V

SCHOTTKY

.1 uA

1

40 V

LONG FORM

40 V

125 Cel

GENERAL PURPOSE

-65 Cel

O-LELF-R2

ISOLATED

HIGH RELIABILITY

1

80 A

SILICON

MIL-19500

JANTX1N6642US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

UNSPECIFIED

SINGLE

.3 A

1.2 V

.005 us

.5 uA

1

LONG FORM

75 V

175 Cel

-65 Cel

TIN LEAD

O-XELF-R2

ISOLATED

Qualified

METALLURGICALLY BONDED

1

2.5 A

e0

SILICON

MIL-19500/578E

UPS140/TR7

Microchip Technology

RECTIFIER DIODE

SINGLE

GULL WING

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1 A

SCHOTTKY

1

SMALL OUTLINE

40 V

125 Cel

-55 Cel

R-PSSO-G1

CATHODE

1

SILICON

APT2X101S20J

Microchip Technology

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

120 A

.07 us

SCHOTTKY

2

FLANGE MOUNT

200 V

150 Cel

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

-55 Cel

R-PUFM-X4

ISOLATED

Not Qualified

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW NOISE, HIGH RELIABILITY

1

1000 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

MBR30100CTE3/TU

Microchip Technology

RECTIFIER DIODE

SINGLE

THROUGH-HOLE

3

NO

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

15 A

.8 V

SCHOTTKY

50 uA

2

FLANGE MOUNT

100 V

175 Cel

EFFICIENCY

-65 Cel

R-PSFM-T3

CATHODE

FREE WHEELING DIODE, LOW POWER LOSS

1

TO-220AB

275 A

SILICON

JAN1N649-1

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.4 A

1

LONG FORM

600 V

150 Cel

-65 Cel

Tin/Lead (Sn63Pb37)

O-LALF-W2

ISOLATED

Qualified

.5 W

METALLURGICALLY BONDED

1

DO-35

e0

SILICON

MIL-19500

JANTX1N5618/TR

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1 A

1.3 V

2 us

.5 uA

1

600 V

LONG FORM

600 V

200 Cel

GENERAL PURPOSE

-65 Cel

O-LALF-W2

ISOLATED

METALLURGICALLY BONDED

1

660 V

30 A

SILICON

MIL-19500

JANTX1N5811/TR

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 A

.875 V

.03 us

5 uA

1

150 V

LONG FORM

150 V

175 Cel

ULTRA FAST RECOVERY

-65 Cel

O-LALF-W2

ISOLATED

HIGH RELIABILITY

1

160 V

125 A

SILICON

MIL-19500

1N5711UR-1E3

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.033 A

.41 V

SCHOTTKY

1

LONG FORM

Rectifier Diodes

70 V

150 Cel

-65 Cel

O-LELF-R2

ISOLATED

METALLURGICALLY BONDED

1

DO-213AA

NOT SPECIFIED

NOT SPECIFIED

SILICON

1N5817E3

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

1 A

SCHOTTKY

1

LONG FORM

20 V

O-PALF-W2

ISOLATED

HIGH RELIABILITY

1

DO-41

SILICON

JAN1N483B

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.2 A

1

LONG FORM

Tin/Lead (Sn/Pb)

O-LALF-W2

ISOLATED

Qualified

1

e0

SILICON

MIL-19500/118F

JANTX1N5615

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1 A

.15 us

AVALANCHE

1

LONG FORM

200 V

TIN LEAD

O-LALF-W2

ISOLATED

Qualified

1

e0

SILICON

MIL-19500/429J

APT2X101D40J

Microchip Technology

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

100 A

1.5 V

.05 us

500 uA

2

400 V

FLANGE MOUNT

Other Diodes

400 V

150 Cel

ULTRA FAST SOFT RECOVERY

-55 Cel

TIN SILVER COPPER

R-PUFM-X4

ISOLATED

Not Qualified

FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW NOISE, SNUBBER DIODE

1

1000 A

e1

SILICON

UL RECOGNIZED

1N5824E3

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

UNSPECIFIED

SINGLE

5 A

SCHOTTKY

1

LONG FORM

30 V

125 Cel

GENERAL PURPOSE

-65 Cel

O-XALF-W2

ISOLATED

1

500 A

SILICON

SK36

Microchip Technology

RECTIFIER DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

3 A

SCHOTTKY

1

SMALL OUTLINE

60 V

GENERAL PURPOSE

TIN LEAD

R-PDSO-C2

Not Qualified

1

DO-214AB

150 A

e0

SILICON

JANTX1N5550

Microchip Technology

RECTIFIER DIODE

AXIAL

WIRE

2

NO

ROUND

UNSPECIFIED

SINGLE

5 A

1

LONG FORM

175 Cel

POWER

-65 Cel

TIN LEAD

O-XALF-W2

ISOLATED

Qualified

1

100 A

e0

SILICON

MIL-19500/420G

APT2X101D100J

Microchip Technology

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

95 A

2.5 V

.3 us

250 uA

2

1000 V

FLANGE MOUNT

Other Diodes

1000 V

175 Cel

ULTRA FAST SOFT RECOVERY

-55 Cel

TIN SILVER COPPER

R-PUFM-X4

ISOLATED

Not Qualified

FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW NOISE, SNUBBER DIODE

1

1000 A

e1

SILICON

JANTX1N5811URS

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

.03 us

1

LONG FORM

150 V

175 Cel

ULTRA FAST RECOVERY

-65 Cel

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

HIGH RELIABILITY, METALLURGICALLY BONDED

1

125 A

e0

SILICON

MIL-19500

JANTXV1N5804US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

2.5 A

.025 us

1

LONG FORM

ULTRA FAST RECOVERY POWER

O-LELF-R2

ISOLATED

Qualified

1

35 A

SILICON

MIL-19500/477F

JANS1N5822US

Microchip Technology

RECTIFIER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

3 A

SCHOTTKY

1

LONG FORM

40 V

GENERAL PURPOSE

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

METALLURGICALLY BONDED

1

80 A

e0

SILICON

MIL-19500/620E

Diodes & Rectifiers

Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.

A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.

Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.

Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.

Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.