Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
3 A |
.15 us |
1 |
LONG FORM |
400 V |
175 Cel |
FAST RECOVERY POWER |
-65 Cel |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
80 A |
e0 |
SILICON |
MIL-19500/411L |
|||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
60 A |
.9 V |
.065 us |
SCHOTTKY |
2 |
IN-LINE |
Rectifier Diodes |
200 V |
150 Cel |
HIGH VOLTAGE ULTRA FAST SOFT RECOVERY |
-55 Cel |
TIN SILVER COPPER |
R-PSIP-T3 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, SNUBBER DIODE, HIGH RELIABILITY, LOW NOISE |
1 |
600 A |
e1 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
1 |
LONG FORM |
POWER |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
100 A |
e0 |
SILICON |
MIL-19500/420G |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.15 us |
1 |
LONG FORM |
175 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/429J |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
SCHOTTKY |
1 |
LONG FORM |
40 V |
GENERAL PURPOSE |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
80 A |
e0 |
SILICON |
MIL-19500/620E |
||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
1.2 V |
.005 us |
.5 uA |
1 |
LONG FORM |
75 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-XELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
2.5 A |
e0 |
SILICON |
MIL-19500/578E |
|||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
YES |
.2 A |
.8 V |
.005 us |
Rectifier Diodes |
75 V |
200 Cel |
Gold (Au) - with Nickel (Ni) barrier |
2 A |
e4 |
SILICON |
|||||||||||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.4 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
GENERAL PURPOSE |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
e0 |
SILICON |
|||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
3 |
NO |
RECTANGULAR |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
480 A |
2.5 V |
.572 us |
2 |
FLANGE MOUNT |
Rectifier Diodes |
1700 V |
150 Cel |
ULTRA FAST SOFT RECOVERY POWER |
-40 Cel |
TIN SILVER COPPER |
R-XUFM-X3 |
1 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT, LOW NOISE |
1 |
1500 A |
e1 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AB |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
60 A |
2.5 V |
.4 us |
1 |
FLANGE MOUNT |
Rectifier Diodes |
1200 V |
175 Cel |
ULTRA FAST SOFT RECOVERY |
-55 Cel |
TIN SILVER COPPER |
R-PSFM-T2 |
CATHODE |
Not Qualified |
HIGH RELIABILITY, FREE WHEELING DIODE, SNUBBER DIODE, LOW NOISE |
1 |
TO-247 |
540 A |
e1 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
.15 us |
1 |
LONG FORM |
400 V |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/429J |
|||||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
.9 V |
SCHOTTKY |
50 uA |
2 |
FLANGE MOUNT |
200 V |
175 Cel |
EFFICIENCY |
-65 Cel |
R-PSFM-T3 |
CATHODE |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
TO-220AB |
275 A |
SILICON |
||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
2 |
NO |
RECTANGULAR |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
60 A |
SCHOTTKY |
2 |
FLANGE MOUNT |
45 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
R-XUFM-X2 |
CATHODE |
Not Qualified |
1 |
1000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
35 A |
5 us |
1 |
POST/STUD MOUNT |
200 V |
175 Cel |
POWER |
-65 Cel |
TIN LEAD |
O-MUPM-D1 |
CATHODE |
Qualified |
1 |
DO-203AB |
500 A |
e0 |
SILICON |
MIL-19500/297 |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
3 A |
1.2 V |
2 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Qualified |
HIGH RELIABILITY |
1 |
100 A |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
100 A |
3 V |
.385 us |
500 uA |
2 |
1200 V |
FLANGE MOUNT |
Other Diodes |
1200 V |
175 Cel |
ULTRA FAST SOFT RECOVERY |
-55 Cel |
TIN SILVER COPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW NOISE, SNUBBER DIODE |
1 |
1000 A |
e1 |
SILICON |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30 A |
2.5 V |
.031 us |
1 |
FLANGE MOUNT |
Rectifier Diodes |
1200 V |
175 Cel |
ULTRA FAST SOFT RECOVERY |
-55 Cel |
TIN SILVER COPPER |
R-PSFM-T2 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW NOISE, SNUBBER DIODE |
1 |
TO-247 |
210 A |
e1 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
35 A |
1 |
POST/STUD MOUNT |
200 V |
175 Cel |
POWER |
-65 Cel |
TIN LEAD |
O-MUPM-D1 |
ANODE |
Qualified |
1 |
DO-203AB |
500 A |
e0 |
SILICON |
MIL-19500/297 |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
.25 us |
1 |
LONG FORM |
600 V |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/429J |
|||||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
5 A |
.52 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
500 A |
e0 |
SILICON |
|||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
30 A |
2.5 V |
.37 us |
2 |
FLANGE MOUNT |
Rectifier Diodes |
1200 V |
175 Cel |
ULTRA FAST SOFT RECOVERY |
-55 Cel |
TIN SILVER COPPER |
R-PSFM-T3 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW NOISE, SNUBBER DIODE |
1 |
TO-247AD |
210 A |
e1 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.075 A |
SCHOTTKY |
1 |
LONG FORM |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
DO-35 |
e0 |
SILICON |
MIL-19500/444 |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.005 us |
1 |
LONG FORM |
200 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AA |
e0 |
SILICON |
|||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1.2 A |
1.6 V |
.045 us |
AVALANCHE |
.5 uA |
1 |
LONG FORM |
400 V |
150 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
HIGH RELIABILITY |
1 |
20 A |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
.025 us |
AVALANCHE |
1 |
LONG FORM |
150 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Qualified |
HIGH RELIABILITY |
1 |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
DUAL |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
20 V |
150 Cel |
-55 Cel |
MATTE TIN |
S-PDSO-G1 |
CATHODE |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-216AA |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
PIN/PEG |
3 |
NO |
SQUARE |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
12 A |
1.35 V |
.06 us |
2 |
FLANGE MOUNT |
Rectifier Diodes |
600 V |
POWER ULTRA FAST RECOVERY |
TIN LEAD |
S-XSFM-P3 |
Not Qualified |
1 |
TO-254AA |
125 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
3 us |
.001 uA |
1 |
LONG FORM |
150 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
4 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
PIN/PEG |
3 |
NO |
SQUARE |
UNSPECIFIED |
COMMON ANODE, 2 ELEMENTS |
12 A |
1.35 V |
.06 us |
2 |
FLANGE MOUNT |
Rectifier Diodes |
400 V |
POWER ULTRA FAST RECOVERY |
TIN LEAD |
S-XSFM-P3 |
Not Qualified |
1 |
TO-254AA |
125 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
PIN/PEG |
3 |
NO |
SQUARE |
UNSPECIFIED |
COMMON ANODE, 2 ELEMENTS |
12 A |
1.35 V |
.06 us |
2 |
FLANGE MOUNT |
Rectifier Diodes |
600 V |
POWER ULTRA FAST RECOVERY |
TIN LEAD |
S-XSFM-P3 |
Not Qualified |
1 |
TO-254AA |
125 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
75 A |
.8 V |
.055 us |
SCHOTTKY |
25000 uA |
2 |
200 V |
FLANGE MOUNT |
Other Diodes |
200 V |
150 Cel |
HIGH VOLTAGE ULTRA FAST SOFT RECOVERY |
-55 Cel |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, SNUBBER DIODE, LOW NOISE, LOW LEAKAGE CURRENT |
1 |
600 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.3 A |
.005 us |
1 |
LONG FORM |
75 V |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
TIN LEAD |
O-XELF-R2 |
1 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AB |
e0 |
SILICON |
MIL-19500/586F |
|||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.03 us |
1 |
LONG FORM |
100 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
5 W |
HIGH RELIABILITY, METALLURGICALLY BONDED |
1 |
125 A |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
3 A |
.15 us |
1 |
LONG FORM |
FAST RECOVERY POWER |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
80 A |
e0 |
SILICON |
MIL-19500/411L |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.004 us |
1 |
LONG FORM |
50 V |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
DO-213AA |
e0 |
SILICON |
MIL-19500/231H |
||||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
32.5 A |
1.8 V |
SCHOTTKY |
200 uA |
2 |
1200 V |
FLANGE MOUNT |
1200 V |
175 Cel |
HIGH VOLTAGE POWER |
-55 Cel |
R-PSFM-T3 |
CATHODE |
259 W |
HIGH RELIABILITY, FREE WHEELING DIODE, LOW NOISE, LOW LEAKAGE CURRENT, SNUBBER DIODE |
1 |
TO-247 |
165 A |
SILICON CARBIDE |
||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
3 A |
.15 us |
1 |
LONG FORM |
FAST RECOVERY POWER |
O-XALF-W2 |
ISOLATED |
1 |
80 A |
SILICON |
MIL-19500/411L |
|||||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.15 us |
AVALANCHE |
1 |
LONG FORM |
175 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
e0 |
SILICON |
|||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.34 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
45 V |
125 Cel |
O-LELF-R2 |
ISOLATED |
METALLURGICALLY BONDED |
1 |
DO-213AB |
25 A |
30 |
250 |
SILICON |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1.2 A |
1.6 V |
.045 us |
AVALANCHE |
.5 uA |
1 |
LONG FORM |
400 V |
150 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
20 A |
e0 |
SILICON |
||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
SCHOTTKY |
1 |
LONG FORM |
GENERAL PURPOSE |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
80 A |
e0 |
SILICON |
MIL-19500/620E |
|||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.033 A |
SCHOTTKY |
2 |
SMALL OUTLINE |
TIN LEAD |
R-CDSO-N3 |
Qualified |
e0 |
SILICON |
MIL-19500/444 |
||||||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
1 |
LONG FORM |
TIN LEAD |
O-LELF-R2 |
1 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/240J |
||||||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
2 |
NO |
RECTANGULAR |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
150 A |
SCHOTTKY |
2 |
FLANGE MOUNT |
60 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
R-XUFM-X2 |
CATHODE |
Not Qualified |
REVERSE ENERGY TESTED |
1 |
2000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
6 A |
.875 V |
.03 us |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
ULTRA FAST RECOVERY POWER |
-65 Cel |
TIN LEAD OVER NICKEL |
O-XALF-W2 |
ISOLATED |
Qualified |
5 W |
HIGH RELIABILITY, METALLURGICALLY BONDED |
1 |
125 A |
e0 |
SILICON |
MIL-19500 |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.