Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.15 A |
1 |
LONG FORM |
175 Cel |
-55 Cel |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/240J |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
1.2 V |
.004 us |
.1 uA |
1 |
LONG FORM |
175 Cel |
-65 Cel |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
DO-35 |
2.5 A |
e0 |
SILICON |
MIL-19500/609D |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
1.2 V |
.004 us |
.1 uA |
1 |
LONG FORM |
175 Cel |
-65 Cel |
TIN LEAD |
O-XELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
2.5 A |
e0 |
SILICON |
MIL-19500/609D |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.004 us |
1 |
LONG FORM |
TIN LEAD |
O-LELF-R2 |
1 |
ISOLATED |
Qualified |
1 |
DO-213AA |
e0 |
SILICON |
MIL-19500/231H |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
5 A |
1 |
LONG FORM |
175 Cel |
POWER |
-65 Cel |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
100 A |
e0 |
SILICON |
MIL-19500/420G |
|||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
2 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
200 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Qualified |
HIGH RELIABILITY |
1 |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
DUAL |
THROUGH-HOLE |
16 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 8 ELEMENTS |
.3 A |
.02 us |
8 |
IN-LINE |
TIN LEAD |
R-PDIP-T16 |
Qualified |
.6 W |
e0 |
SILICON |
MIL-19500/474E |
|||||||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
100 A |
1.8 V |
AVALANCHE |
400 uA |
2 |
700 V |
FLANGE MOUNT |
700 V |
175 Cel |
HIGH VOLTAGE |
-55 Cel |
R-PUFM-X4 |
ISOLATED |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW NOISE, SNUBBER DIODE |
1 |
SILICON CARBIDE |
|||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
50 A |
1.8 V |
SCHOTTKY |
200 uA |
2 |
1700 V |
FLANGE MOUNT |
1700 V |
175 Cel |
HIGH VOLTAGE |
-55 Cel |
R-PUFM-X4 |
ISOLATED |
FREE WHEELING DIODE, SNUBBER DIODE, LOW LEAKAGE CURRENT |
1 |
SILICON CARBIDE |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
70 A |
5 us |
POST/STUD MOUNT |
GENERAL PURPOSE |
TIN LEAD |
O-MUPM-D1 |
Not Qualified |
1 |
DO-5 |
1050 A |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
DUAL |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
2.5 A |
.025 us |
1 |
SMALL OUTLINE |
50 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
S-PDSO-G1 |
CATHODE |
1 |
DO-216AA |
25 A |
e3 |
SILICON |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
1.4 V |
5 us |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
100 V |
200 Cel |
POWER |
-65 Cel |
TIN LEAD |
O-MUPM-D1 |
CATHODE |
Not Qualified |
1 |
DO-203AB |
1050 A |
e0 |
SILICON |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
5 A |
SCHOTTKY |
1 |
LONG FORM |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
O-XALF-W2 |
ISOLATED |
1 |
500 A |
SILICON |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.4 A |
1 |
LONG FORM |
225 V |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
METALLURGICALLY BONDED |
1 |
DO-35 |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.08 us |
AVALANCHE |
1 |
LONG FORM |
1000 V |
150 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
e0 |
SILICON |
||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
30 A |
2.3 V |
.029 us |
2 |
FLANGE MOUNT |
Rectifier Diodes |
1000 V |
175 Cel |
ULTRA FAST SOFT RECOVERY |
-55 Cel |
TIN SILVER COPPER |
R-PSFM-T3 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE, SNUBBER DIODE |
1 |
TO-247 |
210 A |
e1 |
SILICON |
|||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
75 A |
.031 us |
1 |
FLANGE MOUNT |
600 V |
175 Cel |
ULTRA FAST SOFT RECOVERY |
-55 Cel |
TIN SILVER COPPER |
R-PSFM-T3 |
CATHODE |
Not Qualified |
HIGH RELIABILITY, FREE WHEELING DIODE, SNUBBER DIODE |
1 |
TO-247 |
600 A |
e1 |
SILICON |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.033 A |
SCHOTTKY |
1 |
LONG FORM |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AA |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
30 A |
.43 V |
SCHOTTKY |
2 |
FLANGE MOUNT |
Rectifier Diodes |
20 V |
125 Cel |
GENERAL PURPOSE |
-55 Cel |
R-PSFM-T3 |
CATHODE |
Not Qualified |
1 |
600 A |
SILICON |
|||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
30 A |
.31 V |
SCHOTTKY |
2 |
FLANGE MOUNT |
Rectifier Diodes |
20 V |
125 Cel |
GENERAL PURPOSE |
-55 Cel |
R-PSFM-T3 |
ANODE |
Not Qualified |
1 |
600 A |
SILICON |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
1 A |
.25 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
O-XALF-W2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
SILICON |
MIL-19500/359F |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.15 us |
1 |
LONG FORM |
FAST RECOVERY POWER |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
80 A |
SILICON |
MIL-19500/411L |
||||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
DUAL |
THROUGH-HOLE |
14 |
NO |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
COMPLEX |
.5 A |
.02 us |
16 |
IN-LINE |
TIN LEAD |
R-CDIP-T14 |
Qualified |
.6 W |
HIGH RELIABILITY |
TO-116 |
e0 |
SILICON |
MIL-19500/474 |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
.0045 us |
1 |
LONG FORM |
125 V |
TIN LEAD |
O-XELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
e0 |
SILICON |
MIL-19500/578E |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 A |
2 us |
LONG FORM |
GENERAL PURPOSE |
Tin/Lead (Sn/Pb) |
O-LALF-W2 |
ISOLATED |
Qualified |
1 |
100 A |
e0 |
SILICON |
MIL |
||||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
COMMON CATHODE, 2 ELEMENTS |
.3 A |
.8 V |
.005 us |
2 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
175 Cel |
TIN LEAD |
R-CDSO-N3 |
Qualified |
METALLURGICALLY BONDED |
2.5 A |
e0 |
SILICON |
MIL-19500/578E |
||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
2 us |
1 |
LONG FORM |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
e0 |
SILICON |
MIL-19500/427K |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
.025 us |
AVALANCHE |
1 |
LONG FORM |
100 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Qualified |
HIGH RELIABILITY |
1 |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
DUAL |
THROUGH-HOLE |
14 |
NO |
RECTANGULAR |
UNSPECIFIED |
COMPLEX |
.3 A |
.02 us |
16 |
IN-LINE |
TIN LEAD |
R-XDIP-T14 |
Qualified |
.6 W |
HIGH RELIABILITY |
TO-116 |
e0 |
SILICON |
MIL-19500/474 |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
1.1 V |
.0045 us |
.5 uA |
1 |
LONG FORM |
125 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-XELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
2.5 A |
e0 |
SILICON |
MIL-19500/578E |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
1 |
LONG FORM |
POWER |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
100 A |
e0 |
SILICON |
MIL-19500/420G |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.033 A |
SCHOTTKY |
2 |
SMALL OUTLINE |
TIN LEAD |
R-CDSO-N3 |
Qualified |
e0 |
SILICON |
MIL-19500/444 |
||||||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
3 A |
.03 us |
1 |
LONG FORM |
ULTRA FAST RECOVERY POWER |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
35 A |
e0 |
SILICON |
MIL-19500/503B |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
.975 V |
.05 us |
25 uA |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
150 V |
175 Cel |
EFFICIENCY |
-65 Cel |
TIN LEAD |
O-MUPM-D1 |
CATHODE |
Qualified |
1 |
DO-203AB |
800 A |
e0 |
SILICON |
MIL-19500/550B |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
DUAL |
THROUGH-HOLE |
14 |
NO |
RECTANGULAR |
UNSPECIFIED |
COMPLEX |
.3 A |
.02 us |
16 |
IN-LINE |
60 V |
TIN LEAD |
R-XDIP-T14 |
Qualified |
.6 W |
HIGH RELIABILITY |
TO-116 |
e0 |
SILICON |
MIL-19500/474 |
||||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.58 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
-55 Cel |
R-PDSO-C2 |
1 |
DO-214BA |
75 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
.7 V |
SCHOTTKY |
50 uA |
2 |
FLANGE MOUNT |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PSFM-T3 |
ISOLATED |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
TO-220AB |
275 A |
SILICON |
||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
.8 V |
SCHOTTKY |
50 uA |
2 |
FLANGE MOUNT |
80 V |
175 Cel |
EFFICIENCY |
-65 Cel |
R-PSFM-T3 |
ISOLATED |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
TO-220AB |
275 A |
SILICON |
||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
.8 V |
SCHOTTKY |
50 uA |
2 |
FLANGE MOUNT |
90 V |
175 Cel |
EFFICIENCY |
-65 Cel |
R-PSFM-T3 |
CATHODE |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
TO-220AB |
275 A |
SILICON |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
100 A |
1 |
POST/STUD MOUNT |
200 V |
200 Cel |
POWER |
-65 Cel |
TIN LEAD |
O-MUPM-D1 |
ANODE |
Not Qualified |
1 |
DO-203AB |
1800 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.125 A |
.004 us |
1 |
LONG FORM |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-34 |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 A |
.05 us |
LONG FORM |
ULTRA FAST RECOVERY |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
70 A |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30 A |
1.8 V |
.085 us |
250 uA |
1 |
600 V |
FLANGE MOUNT |
Rectifier Diodes |
600 V |
175 Cel |
FAST SOFT RECOVERY |
-55 Cel |
TIN SILVER COPPER |
R-PSFM-T2 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW NOISE, SNUBBER DIODE |
1 |
TO-247 |
320 A |
e1 |
SILICON |
|||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
27 A |
1.8 V |
SCHOTTKY |
200 uA |
1 |
1200 V |
FLANGE MOUNT |
1200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
R-PSFM-T2 |
CATHODE |
136 W |
HIGH RELIABILITY, LOW LEAKAGE CURRENT, PD-CASE |
1 |
TO-220AC |
75 A |
SILICON CARBIDE |
||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
15 A |
.7 V |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
100 V |
150 Cel |
EFFICIENCY |
R-CBCC-N3 |
ISOLATED |
Qualified |
HIGH RELIABILITY |
1 |
250 A |
SILICON |
MIL-19500/679 |
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|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
1 A |
.36 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
20 V |
125 Cel |
-55 Cel |
Matte Tin (Sn) - annealed |
S-PSSO-G1 |
CATHODE |
Not Qualified |
1 |
DO-216AA |
50 A |
e3 |
SILICON |
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Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
40 A |
SCHOTTKY |
1 |
POST/STUD MOUNT |
24 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN LEAD |
O-MUPM-D1 |
CATHODE |
Not Qualified |
1 |
DO-203AB |
800 A |
e0 |
SILICON |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
40 A |
5 us |
1 |
POST/STUD MOUNT |
200 V |
200 Cel |
POWER |
-65 Cel |
TIN LEAD |
O-MUPM-D1 |
CATHODE |
Not Qualified |
1 |
DO-203AB |
800 A |
e0 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.