4 Microwave Mixer & Detector Diodes 324

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Manufacturers
    • Agilent Technologies
    • Broadcom
    • Cobham Plc
    • Diodes Incorporated
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Microchip Technology
    • NXP Semiconductors
    • Nexperia
    • Onsemi
    • Panasonic
    • ROHM
    • Renesas Electronics
    • STMicroelectronics
    • Skyworks Solutions
    • TE Connectivity
    • Texas Instruments
    • Toshiba
Diode Type
    • MIXER DIODE
    • RECTIFIER DIODE
    • VARIABLE CAPACITANCE DIODE
Terminal Position
    • AXIAL
    • BOTTOM
    • DUAL
    • END
    • QUAD
    • RADIAL
    • SINGLE
    • TRIPLE
    • UNSPECIFIED
    • UPPER
Terminal Form
    • BALL
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • WIRE
    • WRAP AROUND
No. of Terminals (1)
    • 4
    • 1
    • 10
    • 2
    • 3
    • 5
    • 6
    • 8
Surface Mount
    • NO
    • YES
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • GLASS
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Config
    • 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • 2 BANKS, SERIES CONNECTED, CENTRE TAP, 2 ELEMENTS
    • ANTI-PARALLEL CONNECTED, 2 ELEMENTS
    • BRIDGE, 4 ELEMENTS
    • COMMON ANODE, 2 ELEMENTS
    • COMMON ANODE, 4 ELEMENTS
    • COMMON BIPOLAR TERMINAL, 2 ELEMENTS
    • COMMON CATHODE, 2 ELEMENTS
    • COMMON CATHODE, 4 ELEMENTS
    • COMPLEX
    • CROSSOVER RING, 4 ELEMENTS
    • RING, 4 ELEMENTS
    • RING, 8 ELEMENTS
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 3 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SINGLE
Maximum Impedance
    • 1200 ohm
    • 150 ohm
    • 15000 ohm
    • 200 ohm
    • 250 ohm
    • 350 ohm
    • 400 ohm
    • 5.5 ohm
    • 5000 ohm
    • 6000 ohm
    • 7500 ohm
Frequency Band
    • C BAND
    • C BAND TO KU BAND
    • C BAND TO X BAND
    • HIGH FREQUENCY
    • K BAND
    • K BAND TO MILLIMETER WAVE BAND
    • KA BAND
    • KU BAND
    • L BAND
    • L BAND TO K BAND
    • L BAND TO KU BAND
    • MEDIUM FREQUENCY
    • MILLIMETER WAVE BAND
    • S BAND
    • S BAND TO C BAND
    • S BAND TO KA BAND
    • S BAND TO X BAND
    • ULTRA HIGH FREQUENCY
    • ULTRA HIGH FREQUENCY TO C BAND
    • ULTRA HIGH FREQUENCY TO S BAND
    • VERY HIGH FREQUENCY
    • VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND
    • VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • W BAND
    • X BAND
    • X BAND TO KU BAND
Maximum Output Current
    • .001 A
    • .005 A
    • .01 A
    • .015 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .05 A
    • .07 A
    • .09 A
    • .1 A
    • .11 A
    • .13 A
    • .15 A
    • .2 A
    • .5 A
    • 1 A
    • 10 A
    • 100 A
    • 15 A
    • 30 A
    • 50 A
Maximum Forward Voltage (VF)
    • .01 V
    • .12 V
    • .15 V
    • .23 V
    • .24 V
    • .25 V
    • .27 V
    • .3 V
    • .32 V
    • .34 V
    • .35 V
    • .375 V
    • .4 V
    • .41 V
    • .415 V
    • .42 V
    • .44 V
    • .45 V
    • .5 V
    • .52 V
    • .55 V
    • .575 V
    • .58 V
    • .6 V
    • .68 V
    • .7 V
    • .8 V
    • .85 V
    • .9 V
    • 1 V
    • 1.1 V
    • 1.2 V
    • 800 V
Maximum Diode Capacitance
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .12 pF
    • .15 pF
    • .16 pF
    • .18 pF
    • .19 pF
    • .2 pF
    • .21 pF
    • .22 pF
    • .23 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .27 pF
    • .28 pF
    • .3 pF
    • .31 pF
    • .32 pF
    • .35 pF
    • .38 pF
    • .4 pF
    • .41 pF
    • .42 pF
    • .5 pF
    • .6 pF
    • .75 pF
    • .8 pF
    • .85 pF
    • .9 pF
    • .97 pF
    • 1 pF
    • 1.03 pF
    • 1.05 pF
    • 1.1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.4 pF
    • 1.5 pF
    • 1.6 pF
    • 1.72 pF
    • 1.83 pF
    • 1.9 pF
    • 10.77 pF
    • 15 pF
    • 2 pF
    • 2.2 pF
    • 2.5 pF
    • 3 pF
    • 3.5 pF
    • 4 pF
Maximum Reverse Recovery Time
    • .003 us
    • .0035 us
    • .004 us
Technology
    • PLANAR DOPED BARRIER
    • SCHOTTKY
Maximum Reverse Current
    • .001 uA
    • .01 uA
    • .02 uA
    • .05 uA
    • .1 uA
    • .2 uA
    • .25 uA
    • .5 uA
    • .75 uA
    • 1.2 uA
    • 10 uA
    • 100 uA
    • 200 uA
    • 25 uA
    • 5 uA
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 6
    • 8
Reverse Test Voltage
    • .5 V
    • 0 V
    • 1 V
    • 1.5 V
    • 15 V
    • 2 V
    • 20 V
    • 25 V
    • 3 V
    • 30 V
    • 4 V
    • 40 V
    • 50 V
    • 70 V
Minimum Pulsed Input Power
    • 1 W
    • 2 W
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • GRID ARRAY
    • IN-LINE
    • LONG FORM
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • Bridge Rectifier Diodes
    • Microwave Mixer Diodes
    • Other Diodes
    • Rectifier Diodes
    • Signal Diodes
    • Varactors
Maximum Repetitive Peak Reverse Voltage
    • 1 V
    • 10 V
    • 100 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 50 V
    • 60 V
    • 7 V
    • 70 V
    • 8 V
    • 80 V
Schottky Barrier Type
    • HIGH BARRIER
    • LOW BARRIER
    • MEDIUM BARRIER
    • ZERO BARRIER
Maximum Operating Temperature
    • 100 Cel
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 60 Cel
    • 70 Cel
    • 85 Cel
Application
    • EFFICIENCY
    • GENERAL PURPOSE
Maximum Pulsed Input Power
    • .075 W
    • .1 W
    • .125 W
    • .15 W
    • .2 W
    • .25 W
    • .3 W
    • .6 W
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
    • -60 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL PALLADIUM GOLD
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
JESD-30 Code
    • O-CELF-R2
    • O-CEMW-N2
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CXMW-G2
    • O-GALF-W2
    • O-LALF-W2
    • O-LELF-N2
    • O-LELF-R2
    • O-LXMW-G2
    • O-PALF-W2
    • O-PBCY-T2
    • O-PBCY-W2
    • O-PELF-N2
    • O-PRDB-F2
    • O-PRDB-F4
    • R-CBCC-N4
    • R-CDMW-F2
    • R-CDSO-C2
    • R-CDSO-G3
    • R-CTMW-F3
    • R-LDMW-F2
    • R-LTMW-F3
    • R-MTMW-F3
    • R-PBCC-N2
    • R-PBCC-N4
    • R-PBGA-B4
    • R-PBGA-B6
    • R-PDSO-F2
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-F5
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PSIP-W2
    • R-PSSO-G2
    • R-XBCC-N2
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDMW-F2
    • R-XDSO-N2
    • R-XQMW-F4
    • R-XUUC-N1
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N6
    • S-CDMW-F2
    • S-CQMW-F4
    • S-CXMW-F2
    • S-CXMW-F4
    • S-LQMW-F4
    • S-PDMW-F2
    • S-PDSO-F2
    • S-PXMW-F2
    • S-PXMW-F4
    • S-XUUC-N1
    • S-XUUC-N3
    • S-XUUC-N4
    • X-LXMW-F3
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • NOT APPLICABLE
Maximum Noise Figure
    • 5 dB
    • 5.5 dB
    • 6 dB
    • 6.2 dB
    • 6.5 dB
    • 7 dB
    • 7.2 dB
    • 7.5 dB
    • 8 dB
    • 9 dB
Case Connection
    • ANODE
    • ANODE AND CATHODE
    • CATHODE
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .02 W
    • .05 W
    • .075 W
    • .1 W
    • .12 W
    • .125 W
    • .15 W
    • .2 W
    • .21 W
    • .225 W
    • .25 W
    • .26 W
    • .28 W
    • .29 W
    • .3 W
    • .315 W
    • .33 W
    • .43 W
    • .5 W
    • .715 W
    • .75 W
Nominal Diode Capacitance
    • .8 pF
    • .92 pF
    • 1.7 pF
Additional Features
    • FORMED LEADS
    • HIGH RELIABILITY
    • HIGH SPEED
    • LOW NOISE
    • LOW REVERSE LEAKAGE
    • MATCHED BATCH AVAILABLE
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2202
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2207
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2765
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2774
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2785
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2794
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5310
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5312
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5320
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5334
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5338
    • STANDARD BATCH MATCH SIZE 100 UNITS
    • TR, 7 INCH : 3000
No. of Phases
    • 1
Minimum Impedance
    • 100 ohm
    • 150 ohm
    • 1800 ohm
    • 200 ohm
    • 2000 ohm
    • 250 ohm
    • 50 ohm
    • 5000 ohm
    • 800 ohm
Minimum Tangential Signal Sensitivity
    • -40 dBm
    • -50 dBm
    • -56 dBm
    • 52 dBm
    • 53 dBm
    • 55 dBm
    • 57 dBm
    • 59 dBm
JEDEC-95 Code
    • DO-34
    • DO-35
    • TO-226AC
    • TO-236
    • TO-236AA
    • TO-236AB
    • TO-253AA
    • TO-92
Minimum Breakdown Voltage
    • 10 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 6 V
    • 60 V
    • 70 V
    • 8 V
Maximum Non Repetitive Peak Forward Current
    • .05 A
    • .06 A
    • .08 A
    • .1 A
    • 1 A
    • 3 A
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e4
    • e6
Minimum Operating Frequency
    • .0001 GHz
    • .3 GHz
    • .915 GHz
    • 0 GHz
    • 10 GHz
    • 11 GHz
    • 12 GHz
    • 12.4 GHz
    • 2 GHz
    • 20 GHz
    • 25 GHz
    • 27 GHz
    • 3.9 GHz
    • 4 GHz
    • 8 GHz
    • 8.2 GHz
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 220
    • 235
    • 245
    • 260
    • NOT SPECIFIED
Diode Element Material
    • GALLIUM ARSENIDE
    • SILICON
Maximum Operating Frequency
    • 1 GHz
    • 10 GHz
    • 100 GHz
    • 11 GHz
    • 12 GHz
    • 14 GHz
    • 150 GHz
    • 18 GHz
    • 4 GHz
    • 40 GHz
    • 5.8 GHz
    • 6 GHz
    • 6000 GHz
    • 8 GHz
    • 80 GHz
    • 85 GHz
Reference Standard
    • AEC-Q101
    • EUROPEAN SPACE AGENCY
    • IEC-60134
    • MIL-19500
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Maximum Impedance Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Minimum Pulsed Input Power Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Schottky Barrier Type Maximum Operating Temperature Application Maximum Pulsed Input Power Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases Minimum Impedance Minimum Tangential Signal Sensitivity JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Minimum Operating Frequency Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Operating Frequency Reference Standard

HSMS-2825-TR1G

Broadcom

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

C BAND

.34 V

.2 pF

SCHOTTKY

.1 uA

2

1 V

SMALL OUTLINE

Other Diodes

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G4

1

CATHODE

Not Qualified

.25 W

e4

20

260

SILICON

BAT15099E6327HTSA1

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

X BAND

.35 pF

SCHOTTKY

2

SMALL OUTLINE

LOW BARRIER

150 Cel

TIN

R-PDSO-G4

1

CATHODE

.1 W

LOW NOISE

e3

SILICON

SMS7621-092

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

COMMON BIPOLAR TERMINAL, 2 ELEMENTS

K BAND

.05 A

.32 V

SCHOTTKY

2

CHIP CARRIER

LOW BARRIER

150 Cel

-65 Cel

R-XBCC-N4

.075 W

2 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAT15099RE6327HTSA1

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

CROSSOVER RING, 4 ELEMENTS

X BAND

.11 A

.41 V

.5 pF

SCHOTTKY

5 uA

4

1 V

SMALL OUTLINE

LOW BARRIER

150 Cel

-55 Cel

TIN

R-PDSO-G4

1

.1 W

4 V

e3

SILICON

BAT1707E6327HTSA1

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.75 pF

SCHOTTKY

2

SMALL OUTLINE

150 Cel

TIN

R-PDSO-G4

1

CATHODE

.15 W

e3

SILICON

BAT15099E6433HTMA1

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

X BAND

.35 pF

SCHOTTKY

2

SMALL OUTLINE

LOW BARRIER

150 Cel

R-PDSO-G4

CATHODE

.1 W

LOW NOISE

SILICON

HSMS-2825-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

C BAND

.34 V

.2 pF

SCHOTTKY

.1 uA

2

1 V

SMALL OUTLINE

Other Diodes

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G4

1

CATHODE

Not Qualified

e4

20

260

SILICON

SMS3922-015LF

Skyworks Solutions

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

1.03 pF

SCHOTTKY

2

SMALL OUTLINE

Microwave Mixer Diodes

150 Cel

Matte Tin (Sn)

R-PDSO-G4

1

Not Qualified

.125 W

e3

40

260

SILICON

DB4J310K0R

Panasonic

MIXER DIODE

DUAL

FLAT

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

VERY HIGH FREQUENCY

.27 V

200 uA

2

30 V

SMALL OUTLINE

Other Diodes

30 V

85 Cel

-40 Cel

R-PDSO-F4

1

SILICON

DA4X106U0R

Panasonic

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

BRIDGE, 4 ELEMENTS

VERY HIGH FREQUENCY

15 pF

4

SMALL OUTLINE

150 Cel

R-PDSO-G4

TO-253AA

NOT SPECIFIED

NOT SPECIFIED

SILICON

HSMS-2815-TR1G

Broadcom

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.41 V

.2 pF

SCHOTTKY

.2 uA

2

15 V

SMALL OUTLINE

Other Diodes

20 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G4

1

CATHODE

Not Qualified

e4

20

260

SILICON

HSMS-2828-TR1G

Broadcom

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

BRIDGE, 4 ELEMENTS

C BAND

.34 V

.2 pF

SCHOTTKY

.1 uA

4

1 V

SMALL OUTLINE

Other Diodes

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G4

1

CATHODE

Not Qualified

.25 W

e4

20

260

SILICON

HSMS-2808-TR2G

Broadcom

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

RING, 4 ELEMENTS

.41 V

2 pF

SCHOTTKY

4

SMALL OUTLINE

Bridge Rectifier Diodes

70 V

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G4

1

CATHODE

Not Qualified

e4

20

260

SILICON

HSMS-2855-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

L BAND

SCHOTTKY

2

SMALL OUTLINE

Other Diodes

ZERO BARRIER

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G4

1

Not Qualified

e4

.915 GHz

20

260

SILICON

4 GHz

HSMS-2855-TR1G

Broadcom

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

L BAND

SCHOTTKY

2

SMALL OUTLINE

Other Diodes

ZERO BARRIER

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G4

1

Not Qualified

e4

.915 GHz

20

260

SILICON

4 GHz

BAT17-07E6327

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.35 V

.75 pF

SCHOTTKY

10 uA

2

4 V

SMALL OUTLINE

Other Diodes

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G4

1

CATHODE

Not Qualified

.15 W

e3

260

SILICON

BAT1707E6327XT

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.75 pF

SCHOTTKY

2

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G4

.15 W

NOT SPECIFIED

NOT SPECIFIED

SILICON

HSMS-2829-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

CROSSOVER RING, 4 ELEMENTS

C BAND

.34 V

.2 pF

SCHOTTKY

.1 uA

4

1 V

SMALL OUTLINE

Other Diodes

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G4

1

ANODE AND CATHODE

Not Qualified

e4

20

260

SILICON

BAT62E6327HTSA1

Infineon Technologies

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

ANTI-PARALLEL CONNECTED, 2 ELEMENTS

C BAND

.02 A

1 V

.6 pF

SCHOTTKY

10 uA

2

40 V

SMALL OUTLINE

Other Diodes

LOW BARRIER

125 Cel

-55 Cel

TIN

R-PDSO-G4

1

ANODE

Not Qualified

.1 W

40 V

e3

SILICON

6 GHz

SMS7630-517

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

X BAND

.24 V

.3 pF

SCHOTTKY

2

CHIP CARRIER

Other Diodes

1 V

ZERO BARRIER

150 Cel

-65 Cel

R-PBCC-N4

1

Not Qualified

.075 W

LOW NOISE

30

260

SILICON

DME3943-000

Skyworks Solutions

MIXER DIODE

UPPER

NO LEAD

4

YES

SQUARE

UNSPECIFIED

BRIDGE, 4 ELEMENTS

X BAND

.3 pF

SCHOTTKY

4

UNCASED CHIP

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

S-XUUC-N4

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

SILICON

DMJ3940-000

Skyworks Solutions

MIXER DIODE

UPPER

NO LEAD

4

YES

SQUARE

UNSPECIFIED

COMPLEX

S BAND TO X BAND

.3 pF

SCHOTTKY

8

UNCASED CHIP

Microwave Mixer Diodes

HIGH BARRIER

150 Cel

S-XUUC-N4

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

SILICON

HMPS-2822-BLK

Broadcom

MIXER DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

C BAND

.34 V

1 pF

SCHOTTKY

.1 uA

2

1 V

CHIP CARRIER

Other Diodes

150 Cel

-65 Cel

Tin (Sn)

R-XBCC-N4

1

Not Qualified

e3

20

260

SILICON

HSMS-2808-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

RING, 4 ELEMENTS

.41 V

2 pF

SCHOTTKY

4

SMALL OUTLINE

Bridge Rectifier Diodes

70 V

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G4

1

CATHODE

Not Qualified

e4

20

260

SILICON

HSMS-2808-TR1G

Broadcom

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

RING, 4 ELEMENTS

.41 V

2 pF

SCHOTTKY

4

SMALL OUTLINE

Bridge Rectifier Diodes

70 V

150 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G4

1

CATHODE

Not Qualified

e4

20

260

SILICON

HSMS-2828-BLKG

Broadcom

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

BRIDGE, 4 ELEMENTS

C BAND

.34 V

.2 pF

SCHOTTKY

.1 uA

4

1 V

SMALL OUTLINE

Other Diodes

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G4

1

CATHODE

Not Qualified

e4

20

260

SILICON

SMS3926-099

Skyworks Solutions

MIXER DIODE

UPPER

NO LEAD

4

YES

SQUARE

UNSPECIFIED

RING, 4 ELEMENTS

.5 pF

SCHOTTKY

4

UNCASED CHIP

LOW BARRIER

S-XUUC-N4

Not Qualified

.075 W

NOT SPECIFIED

NOT SPECIFIED

SILICON

DMF2865-000

Skyworks Solutions

MIXER DIODE

QUAD

FLAT

4

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

RING, 4 ELEMENTS

S BAND

.5 pF

SCHOTTKY

4

MICROWAVE

Microwave Mixer Diodes

LOW BARRIER

175 Cel

S-CQMW-F4

1

Not Qualified

2 GHz

40

260

SILICON

4 GHz

DMJ3940-257

Skyworks Solutions

MIXER DIODE

RADIAL

FLAT

4

YES

ROUND

PLASTIC/EPOXY

RING, 8 ELEMENTS

S BAND TO X BAND

SCHOTTKY

8

DISK BUTTON

HIGH BARRIER

O-PRDB-F4

1

Not Qualified

40

260

SILICON

SMS3929-021LF

Skyworks Solutions

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

BRIDGE, 4 ELEMENTS

C BAND

.5 pF

SCHOTTKY

4

SMALL OUTLINE

LOW BARRIER

150 Cel

Matte Tin (Sn)

R-PDSO-G4

1

CATHODE

Not Qualified

.075 W

e3

40

260

SILICON

MSS30,442-E45

M/a-com Technology Solutions

MIXER DIODE

UNSPECIFIED

FLAT

4

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

RING, 4 ELEMENTS

MILLIMETER WAVE BAND

.05 A

.21 pF

SCHOTTKY

4

MICROWAVE

LOW BARRIER

150 Cel

-65 Cel

S-CXMW-F4

.1 W

2 V

SILICON

MSS30-442-E45

M/a-com Technology Solutions

MIXER DIODE

UNSPECIFIED

FLAT

4

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

RING, 4 ELEMENTS

MILLIMETER WAVE BAND

.21 pF

SCHOTTKY

4

MICROWAVE

LOW BARRIER

150 Cel

-65 Cel

GOLD

S-CXMW-F4

Not Qualified

.1 W

HIGH RELIABILITY

e4

SILICON

MIL-19500

BAS70-07

NXP Semiconductors

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.41 V

2 pF

SCHOTTKY

.1 uA

2

50 V

SMALL OUTLINE

Other Diodes

70 V

150 Cel

-65 Cel

Tin (Sn)

R-PDSO-G4

1

CATHODE

Not Qualified

e3

30

260

SILICON

BAR80E6327

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1.6 pF

1

SMALL OUTLINE

MATTE TIN

R-PDSO-G4

ANODE AND CATHODE

Not Qualified

e3

SILICON

BAR80E6433

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1.6 pF

1

SMALL OUTLINE

MATTE TIN

R-PDSO-G4

ANODE AND CATHODE

Not Qualified

e3

SILICON

BAT6207WH6327XTSA1

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.02 A

1 V

.6 pF

SCHOTTKY

10 uA

2

40 V

SMALL OUTLINE

LOW BARRIER

150 Cel

R-PDSO-G4

.1 W

TR, 7 INCH : 3000

SILICON

BAT15-025D

Infineon Technologies

MIXER DIODE

UNSPECIFIED

FLAT

4

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

400 ohm

S BAND

100 A

.42 pF

SCHOTTKY

2

MICROWAVE

Other Diodes

LOW BARRIER

150 Cel

Tin/Lead (Sn/Pb)

S-CXMW-F4

Not Qualified

250 ohm

53 dBm

4 V

e0

0 GHz

SILICON

4 GHz

BAT15-099R

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

CROSSOVER RING, 4 ELEMENTS

X BAND

.5 pF

SCHOTTKY

4

SMALL OUTLINE

Microwave Mixer Diodes

LOW BARRIER

150 Cel

TIN

R-PDSO-G4

1

CATHODE

Not Qualified

.1 W

LOW NOISE

e3

SILICON

BAT15-020R

Infineon Technologies

MIXER DIODE

QUAD

FLAT

4

YES

SQUARE

GLASS

RING, 4 ELEMENTS

400 ohm

S BAND

100 A

.35 pF

SCHOTTKY

4

MICROWAVE

Other Diodes

LOW BARRIER

150 Cel

S-LQMW-F4

Not Qualified

250 ohm

53 dBm

4 V

0 GHz

SILICON

4 GHz

BAT63

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.85 pF

SCHOTTKY

2

SMALL OUTLINE

Microwave Mixer Diodes

LOW BARRIER

150 Cel

TIN LEAD

R-PDSO-G4

CATHODE

Not Qualified

e0

SILICON

BAT15-115R

Infineon Technologies

MIXER DIODE

UNSPECIFIED

FLAT

4

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

RING, 4 ELEMENTS

400 ohm

KA BAND

50 A

.19 pF

SCHOTTKY

4

MICROWAVE

Other Diodes

LOW BARRIER

150 Cel

Tin/Lead (Sn/Pb)

S-CXMW-F4

Not Qualified

250 ohm

53 dBm

4 V

e0

0 GHz

SILICON

40 GHz

BAT63-07WE6811

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.3 V

.85 pF

SCHOTTKY

2

SMALL OUTLINE

Other Diodes

8 V

LOW BARRIER

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G4

Not Qualified

.1 W

e3

SILICON

BAT6307WH6327XTSA1

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.85 pF

SCHOTTKY

2

SMALL OUTLINE

LOW BARRIER

150 Cel

R-PDSO-G4

CATHODE

.1 W

HIGH SPEED

SILICON

BAT15-099RE6327

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

CROSSOVER RING, 4 ELEMENTS

X BAND

.11 A

.41 V

.35 pF

SCHOTTKY

4

SMALL OUTLINE

Microwave Mixer Diodes

LOW BARRIER

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G4

1

ANODE AND CATHODE

Not Qualified

.1 W

4 V

e3

260

SILICON

BAT15-099E6433

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

X BAND

.11 A

.41 V

.35 pF

SCHOTTKY

2

SMALL OUTLINE

Other Diodes

4 V

LOW BARRIER

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G4

1

CATHODE

Not Qualified

.1 W

4 V

e3

260

SILICON

BAT17-07

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.75 pF

SCHOTTKY

2

SMALL OUTLINE

Microwave Mixer Diodes

150 Cel

R-PDSO-G4

1

7 dB

CATHODE

Not Qualified

.15 W

SILICON

BAT14-099RE6327

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

CROSSOVER RING, 4 ELEMENTS

SCHOTTKY

4

SMALL OUTLINE

MEDIUM BARRIER

R-PDSO-G4

ANODE AND CATHODE

Not Qualified

.1 W

SILICON

BAT114-099RE6327

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

CROSSOVER RING, 4 ELEMENTS

SCHOTTKY

4

SMALL OUTLINE

HIGH BARRIER

R-PDSO-G4

ANODE AND CATHODE

Not Qualified

.1 W

SILICON

Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84