4 PIN Diodes 107

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
HMPP-3862	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED	1 mA	SEPARATE, 2 ELEMENTS		.2 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	UNCASED CHIP	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	Tin (Sn)	R-XUUC-N4	22 ohm	1	Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3865-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.2 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	Tin (Sn)	R-CBCC-N4	22 ohm	1	Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3895-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2	5 V	CHIP CARRIER	PIN Diodes	150 Cel	SWITCHING	Tin (Sn)	R-CBCC-N4	2.5 ohm	1	Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3892-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2	5 V	CHIP CARRIER	PIN Diodes	150 Cel	SWITCHING	Tin (Sn)	R-CBCC-N4	2.5 ohm	1	Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3892	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		UNCASED CHIP		150 Cel	ATTENUATOR; SWITCHING	Tin (Sn)	R-XUUC-N4	3.8 ohm	1	Not Qualified				.2 us	50 V	e3	20	260	SILICON
HSMP-3805#L31	Broadcom	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS			POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	ATTENUATOR		R-PDSO-G4			Not Qualified	.25 W		LOW DISTORTION	1.8 us			NOT SPECIFIED	NOT SPECIFIED	SILICON
HSMP-3805#L30G	Broadcom	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS			POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	ATTENUATOR		R-PDSO-G4			Not Qualified	.25 W		LOW DISTORTION	1.8 us					SILICON
HSMP-3805	Broadcom	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS			POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	ATTENUATOR		R-PDSO-G4			Not Qualified	.25 W		LOW DISTORTION	1.8 us					SILICON
HSMP-3805G	Broadcom	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS			POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	ATTENUATOR		R-PDSO-G4			Not Qualified	.25 W		LOW DISTORTION	1.8 us					SILICON
HSMP-3805#L30	Broadcom	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS			POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	ATTENUATOR		R-PDSO-G4			Not Qualified	.25 W		LOW DISTORTION	1.8 us			NOT SPECIFIED	NOT SPECIFIED	SILICON
HSMP-3805#L31G	Broadcom	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS			POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	ATTENUATOR		R-PDSO-G4			Not Qualified	.25 W		LOW DISTORTION	1.8 us					SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.