4 PIN Diodes 107

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
BAR61E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		COMPLEX	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		3		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G4		1	ANODE AND CATHODE	Not Qualified	.25 W			1 us		e3			SILICON
SMP1345-518	Skyworks Solutions	PIN DIODE	BOTTOM	BUTT	4	YES	RECTANGULAR	PLASTIC/EPOXY		RING, 4 ELEMENTS	C BAND		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		4		GRID ARRAY				ATTENUATOR; SWITCHING			R-PBGA-B4	2 ohm	1	ISOLATED	Not Qualified	.25 W			.1 us			30	260	SILICON
BXY44P-FPH	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	1 mA	COMMON CATHODE, 2 ELEMENTS			.75 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		175 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1200 ohm			Not Qualified	.5 W	.5 pF		.8 us	200 V	e3			SILICON	100 MHz
BAR88-07LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING			R-XBCC-N4	2.5 ohm			Not Qualified	.25 W		LOW DISTORTION	.5 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR90-07L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	150 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm	1		Not Qualified	.25 W			.75 us	80 V				SILICON
BAR90-098LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	150 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm			Not Qualified	.25 W			.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR90-07LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-XBCC-N4	2.3 ohm			Not Qualified	.25 W			.75 us	80 V	e3			SILICON
BAR81WH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	SWITCHING		TIN	R-PDSO-G4	1 ohm	1	CATHODE		.1 W			.08 us	30 V	e3			SILICON
BAR81W	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		TIN	R-PDSO-G4	1 ohm	1	CATHODE	Not Qualified	.1 W	.6 pF		.08 us	30 V	e3			SILICON
BXY44-FPS	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.75 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz
BAR88-098LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING			R-XBCC-N4	2.5 ohm			Not Qualified	.25 W		LOW DISTORTION	.5 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR90-099LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	125 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm			Not Qualified	.25 W			.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR88-099LRH	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		MATTE TIN	R-XBCC-N4	2.5 ohm			Not Qualified	.25 W		LOW DISTORTION	.5 us	80 V	e3			SILICON
BXY43-FPH	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	1.5 ohm			Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY43P-FPP	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	.02 mA	COMMON CATHODE, 2 ELEMENTS			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1.5 ohm			Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BAR88-099L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.9 V	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-XBCC-N4	2.5 ohm			Not Qualified	.25 W		LOW DISTORTION	.5 us	80 V	e3			SILICON
BXY44P-FPP	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	1 mA	COMMON CATHODE, 2 ELEMENTS			.75 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		175 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1200 ohm			Not Qualified	.5 W	.5 pF		.8 us	200 V	e3			SILICON	100 MHz
BAR88-07L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.9 V	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	125 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.5 ohm			Not Qualified	.25 W		LOW DISTORTION	.5 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BXY43-FPES	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	1.5 ohm			Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BAR90-098L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	150 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm	1		Not Qualified	.25 W			.75 us	80 V				SILICON
BAR80	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			1.6 pF			1	3 V	SMALL OUTLINE	PIN Diodes			SWITCHING		TIN LEAD	R-PDSO-G4	.7 ohm		ANODE AND CATHODE	Not Qualified		1.3 pF			35 V	e0			SILICON
BXY44P-FPS	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	1 mA	COMMON CATHODE, 2 ELEMENTS			.75 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		175 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1200 ohm			Not Qualified	.5 W	.5 pF		.8 us	200 V	e3			SILICON	100 MHz
BXY43P-FPES	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	.02 mA	COMMON CATHODE, 2 ELEMENTS			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1.5 ohm			Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44P-FPES	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	1 mA	COMMON CATHODE, 2 ELEMENTS			.75 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		175 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1200 ohm			Not Qualified	.5 W	.5 pF		.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY43-FPS	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	1.5 ohm			Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY43P-FPS	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	.02 mA	COMMON CATHODE, 2 ELEMENTS			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1.5 ohm			Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BAR81	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE						1	1 V	SMALL OUTLINE	PIN Diodes			SWITCHING		TIN LEAD	R-PDSO-G4	.7 ohm		ANODE AND CATHODE	Not Qualified		.6 pF			30 V	e0			SILICON
BXY43-FPP	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	1.5 ohm			Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BAR90-099L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	L BAND	.87 V	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	.05 uA	2	60 V	CHIP CARRIER	Other Diodes	80 V	150 Cel	SWITCHING	-55 Cel		R-XBCC-N4	2.3 ohm	1		Not Qualified	.25 W			.75 us	80 V				SILICON
BXY43P	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	.02 mA	COMMON CATHODE, 2 ELEMENTS			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			S-CDFP-F4	3 ohm			Not Qualified	.5 W	.85 pF		.65 us					SILICON	100 MHz
BXY44-FPES	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.75 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-FP	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-CDSO-F4	5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.8 us	200 V				SILICON		ESA-SCC-5513/030
BXY44-FPP	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.75 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz
BXY43P-FPH	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	.02 mA	COMMON CATHODE, 2 ELEMENTS			.85 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1.5 ohm			Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY44-FPH	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.75 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	FLATPACK	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz
BAR64-07	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SEPARATE, 2 ELEMENTS	MEDIUM FREQUENCY TO C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G4	1.35 ohm	1	CATHODE	Not Qualified	.25 W	.35 pF	LOW DISTORTION	1.55 us	150 V				SILICON
BAR60E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		COMPLEX	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		3		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G4			ANODE AND CATHODE	Not Qualified	.25 W			1 us		e3			SILICON
BAR63-07L4	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS	S BAND	1.2 V	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	.01 uA	2	35 V	CHIP CARRIER	Other Diodes	50 V	150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-XBCC-N4	2 ohm			Not Qualified	.25 W			.075 us	50 V	e3			SILICON
BAR60	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	.01 mA	COMPLEX	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		3		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-55 Cel	TIN LEAD	R-PDSO-G4	1200 ohm		ANODE AND CATHODE	Not Qualified	.25 W	.35 pF		1 us	100 V	e0			SILICON	100 MHz
BAR63-07F	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				SWITCHING			R-PDSO-F4	2 ohm	1		Not Qualified	.25 W			.075 us	50 V				SILICON
BAR61E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	.01 mA	COMPLEX	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		3	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G4	4200 ohm		ANODE AND CATHODE	Not Qualified	.25 W	.2 pF		1 us	100 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BAR60E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		COMPLEX	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		3		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G4			ANODE AND CATHODE	Not Qualified	.25 W			1 us		e3			SILICON
BAR61	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	.01 mA	COMPLEX	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		3		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G4	12 ohm	1	CATHODE	Not Qualified	.25 W	.35 pF	LOW DISTORTION	1 us	100 V				SILICON	100 MHz
BAR65-07E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				SWITCHING			R-PDSO-G4	.95 ohm		CATHODE	Not Qualified					30 V				SILICON
BAR61E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	.01 mA	COMPLEX	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		3	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G4	4200 ohm	1	ANODE AND CATHODE	Not Qualified	.25 W	.2 pF		1 us	100 V	e3		260	SILICON	100 MHz
BAR64-07E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SEPARATE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G4	20 ohm	1	CATHODE	Not Qualified	.25 W	.17 pF	HIGH VOLTAGE	1.55 us	200 V	e3		260	SILICON	100 MHz
BAR65-07E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				SWITCHING			R-PDSO-G4	.95 ohm		CATHODE	Not Qualified					30 V				SILICON
BAR63-07	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SEPARATE, 2 ELEMENTS			.25 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	SMALL OUTLINE	PIN Diodes			SWITCHING			R-PDSO-G4	1 ohm			Not Qualified		.25 pF			35 V				SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.