4 PIN Diodes 107

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
BAR65-07	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SEPARATE, 2 ELEMENTS			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		2	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		TIN LEAD	R-PDSO-G4	.9 ohm		CATHODE	Not Qualified	.25 W	.6 pF		.08 us	30 V	e0			SILICON
BAR64-07E6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SEPARATE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR; SWITCHING		Matte Tin (Sn)	R-PDSO-G4	20 ohm		CATHODE	Not Qualified	.25 W	.17 pF	HIGH VOLTAGE	1.55 us	200 V	e3			SILICON	100 MHz
BAR65-07F	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				SWITCHING			R-PDSO-F4	.9 ohm	1		Not Qualified	.25 W			.08 us	30 V				SILICON
JDP4P02AT	Toshiba	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		TIN LEAD	R-PDSO-F4	1.5 ohm			Not Qualified		.3 pF			30 V	e0			SILICON	100 MHz
JDP4L08CTC	Toshiba	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED	10 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2	1 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING			R-XBCC-N4	1.5 ohm			Not Qualified		.21 pF			30 V				SILICON	100 MHz
1SV312	Toshiba	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY				1 V		POSITIVE-INTRINSIC-NEGATIVE	.1 uA		50 V	SMALL OUTLINE	Other Diodes	50 V	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)	R-PDSO-G4				Not Qualified						e0			SILICON
JDP4P02U	Toshiba	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		TIN LEAD	R-PDSO-G4				Not Qualified		.3 pF			30 V	e0			SILICON
JDP4P08CTC	Toshiba	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED	10 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2	1 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING			R-XBCC-N4	1.5 ohm			Not Qualified		.21 pF			30 V				SILICON	100 MHz
1SV237TE85R	Toshiba	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR			R-PDSO-G4				Not Qualified					50 V				SILICON
1SV237	Toshiba	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE	Varactors	50 V	125 Cel	ATTENUATOR		Tin/Lead (Sn/Pb)	R-PDSO-G4			CATHODE	Not Qualified		.25 pF			50 V	e0			SILICON
1SV237TE85L	Toshiba	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE	Varactors	50 V	125 Cel	ATTENUATOR			R-PDSO-G4				Not Qualified		.25 pF			50 V				SILICON
1SV237(TE85L,F)	Toshiba	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR			R-PDSO-G4			CATHODE			.25 pF			50 V				SILICON
HVB187YP	Renesas Electronics	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SEPARATE, 2 ELEMENTS	VERY HIGH FREQUENCY	1 V	2.4 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	2	60 V	SMALL OUTLINE	Other Diodes	60 V	125 Cel	ATTENUATOR			R-PDSO-G4	5.5 ohm			Not Qualified	.1 W				60 V				SILICON	100 MHz
HMPP-3864-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified				.5 us	50 V	e3			SILICON
HMPP-389T-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3895-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3864-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified				.5 us	50 V	e3			SILICON
HMPP-3893-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified				.2 us	100 V	e3			SILICON
HMPP-3865	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED	1 mA	SEPARATE, 2 ELEMENTS			.2 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	UNCASED CHIP	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-XUUC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3863-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified				.5 us	50 V	e3			SILICON
HMPP-3860-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3864-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified				.5 us	50 V	e3			SILICON
HMPP-389T	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED						POSITIVE-INTRINSIC-NEGATIVE				UNCASED CHIP			150 Cel			Tin (Sn)	R-XUUC-N4		1		Not Qualified						e3	20	260	SILICON
HMPP-3895	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		UNCASED CHIP			150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-XUUC-N4	3.8 ohm	1		Not Qualified				.2 us	50 V	e3	20	260	SILICON
HMPP-3893-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified				.2 us	100 V	e3			SILICON
HMPP-3894-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified				.2 us	100 V	e3			SILICON
HMPP-3894-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified				.2 us	100 V	e3			SILICON
HMPP-3892-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3890-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-389T-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3893-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified				.2 us	100 V	e3			SILICON
HMPP-3890-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3860-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3862-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3890-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3860	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED	1 mA	SINGLE			.2 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	UNCASED CHIP	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-XUUC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3863-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified				.5 us	50 V	e3			SILICON
HMPP-3862-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3865-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-389T-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3865-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3860-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3890	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1		UNCASED CHIP			150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-XUUC-N4	3.8 ohm	1		Not Qualified				.2 us	50 V	e3	20	260	SILICON
HMPP-3892-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3894-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified				.2 us	100 V	e3			SILICON
HMPP-3863-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified				.5 us	50 V	e3			SILICON
HMPP-3862-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3895-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.