ROUND PIN Diodes 126
| Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Diode Resistive Test Current | Config | Frequency Band | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Maximum Diode Forward Resistance | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | Nominal Minority Carrier Lifetime | JEDEC-95 Code | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Diode Resistive Test Frequency | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Gec Plessey Semiconductors |
PIN DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
100 mA |
SINGLE |
HIGH FREQUENCY TO KU BAND |
.4 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
MICROWAVE |
PIN Diodes |
150 Cel |
ATTENUATOR; LIMITER; SWITCHING |
-55 Cel |
O-CEMW-N2 |
1 ohm |
Not Qualified |
.25 W |
.05 us |
100 V |
SILICON |
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|
Gec Plessey Semiconductors |
PIN DIODE |
UPPER |
NO LEAD |
1 |
YES |
ROUND |
UNSPECIFIED |
25 mA |
SINGLE |
HIGH FREQUENCY TO KU BAND |
.12 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
UNCASED CHIP |
PIN Diodes |
150 Cel |
SWITCHING |
-55 Cel |
O-XUUC-N1 |
2 ohm |
Not Qualified |
.25 W |
30 us |
25 V |
SILICON |
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|
Gec Plessey Semiconductors |
PIN DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
20 mA |
SINGLE |
HIGH FREQUENCY TO KU BAND |
.4 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
MICROWAVE |
PIN Diodes |
150 Cel |
ATTENUATOR; LIMITER; SWITCHING |
-55 Cel |
O-CEMW-N2 |
2 ohm |
Not Qualified |
.25 W |
.005 us |
50 V |
SILICON |
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|
Microchip Technology |
PIN DIODE |
RADIAL |
FLAT |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
POST/STUD MOUNT |
ATTENUATOR; SWITCHING |
TIN LEAD |
O-XRPM-F2 |
1 ohm |
Not Qualified |
7.5 W |
LOW DISTORTION, METALLURGICALLY BONDED |
3.5 us |
e0 |
SILICON |
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|
Microchip Technology |
PIN DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
UNSPECIFIED |
100 mA |
SINGLE |
ULTRA HIGH FREQUENCY |
.4 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
100 V |
MICROWAVE |
PIN Diodes |
175 Cel |
ATTENUATOR; SWITCHING |
-65 Cel |
TIN LEAD |
O-XEMW-N2 |
2.5 ohm |
Not Qualified |
6 W |
.4 pF |
1 us |
600 V |
e0 |
SILICON |
100 MHz |
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|
Microchip Technology |
PIN DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
100 mA |
SINGLE |
ULTRA HIGH FREQUENCY |
.4 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
100 V |
LONG FORM |
PIN Diodes |
175 Cel |
ATTENUATOR; SWITCHING |
-65 Cel |
TIN LEAD |
O-XALF-W2 |
2.5 ohm |
ISOLATED |
Not Qualified |
2.5 W |
.4 pF |
1 us |
100 V |
e0 |
SILICON |
100 MHz |
||||||||||||
|
Microchip Technology |
PIN DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
ULTRA HIGH FREQUENCY |
.4 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
LONG FORM |
ATTENUATOR; SWITCHING |
TIN LEAD |
O-XELF-R2 |
2.5 ohm |
ISOLATED |
Not Qualified |
4.5 W |
1 us |
600 V |
e0 |
SILICON |
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|
Gec Plessey Semiconductors |
PIN DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
100 mA |
SINGLE |
HIGH FREQUENCY TO KU BAND |
.4 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
MICROWAVE |
PIN Diodes |
150 Cel |
ATTENUATOR; LIMITER; SWITCHING |
-55 Cel |
O-CEMW-N2 |
1 ohm |
Not Qualified |
.25 W |
.05 us |
100 V |
SILICON |
||||||||||||||||||
|
Microchip Technology |
PIN DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
100 mA |
SINGLE |
ULTRA HIGH FREQUENCY |
.4 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
100 V |
LONG FORM |
PIN Diodes |
175 Cel |
ATTENUATOR; SWITCHING |
-65 Cel |
TIN LEAD |
O-XALF-W2 |
2.5 ohm |
ISOLATED |
Not Qualified |
2.5 W |
.4 pF |
1 us |
1000 V |
e0 |
SILICON |
100 MHz |
||||||||||||
|
Gec Plessey Semiconductors |
PIN DIODE |
UPPER |
NO LEAD |
1 |
YES |
ROUND |
UNSPECIFIED |
100 mA |
SINGLE |
HIGH FREQUENCY TO KU BAND |
.15 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
UNCASED CHIP |
PIN Diodes |
150 Cel |
SWITCHING |
-55 Cel |
O-XUUC-N1 |
1 ohm |
Not Qualified |
.25 W |
500 us |
50 V |
SILICON |
||||||||||||||||||
|
Gec Plessey Semiconductors |
PIN DIODE |
UPPER |
NO LEAD |
1 |
YES |
ROUND |
UNSPECIFIED |
25 mA |
SINGLE |
HIGH FREQUENCY TO KU BAND |
.2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
UNCASED CHIP |
PIN Diodes |
150 Cel |
SWITCHING |
-55 Cel |
O-XUUC-N1 |
3 ohm |
Not Qualified |
.25 W |
2 us |
100 V |
SILICON |
||||||||||||||||||
|
Microchip Technology |
PIN DIODE |
UPPER |
NO LEAD |
1 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
POST/STUD MOUNT |
ATTENUATOR; SWITCHING |
TIN LEAD |
O-XUPM-N1 |
1 ohm |
ANODE |
Not Qualified |
10 W |
LOW DISTORTION, METALLURGICALLY BONDED |
3.5 us |
e0 |
SILICON |
||||||||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
10 mA |
SINGLE |
KA BAND |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
MICROWAVE |
PIN Diodes |
175 Cel |
LIMITER |
-65 Cel |
O-CDMW-N2 |
2 ohm |
Not Qualified |
.2 pF |
.005 us |
20 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
500 MHz |
||||||||||||||
|
Microchip Technology |
PIN DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
50 mA |
SINGLE |
4 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
50 V |
LONG FORM |
PIN Diodes |
175 Cel |
SWITCHING |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
1 ohm |
ISOLATED |
Not Qualified |
2.5 W |
4 pF |
LOW DISTORTION |
5 us |
50 V |
e0 |
SILICON |
100 MHz |
||||||||||||
|
Microchip Technology |
PIN DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
50 mA |
SINGLE |
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
4 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
LONG FORM |
PIN Diodes |
SWITCHING |
TIN LEAD |
O-XALF-W2 |
1 ohm |
ISOLATED |
Not Qualified |
2.5 W |
4 pF |
LOW DISTORTION |
5 us |
50 V |
e0 |
SILICON |
100 MHz |
|||||||||||||
|
Microchip Technology |
PIN DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
50 mA |
SINGLE |
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
4 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
LONG FORM |
PIN Diodes |
SWITCHING |
TIN LEAD |
O-LELF-R2 |
1 ohm |
ISOLATED |
Not Qualified |
2.5 W |
4 pF |
LOW DISTORTION |
5 us |
50 V |
e0 |
SILICON |
100 MHz |
|||||||||||||
|
Microchip Technology |
PIN DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
50 mA |
SINGLE |
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
1.5 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
LONG FORM |
PIN Diodes |
SWITCHING |
TIN LEAD |
O-LELF-R2 |
1 ohm |
ISOLATED |
Not Qualified |
1.5 W |
1.5 pF |
LOW DISTORTION |
2 us |
50 V |
e0 |
SILICON |
100 MHz |
|||||||||||||
|
|
Skyworks Solutions |
PIN DIODE |
DUAL |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
10 mA |
SINGLE |
KA BAND |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
MICROWAVE |
PIN Diodes |
175 Cel |
LIMITER |
-65 Cel |
O-CDMW-N2 |
2 ohm |
Not Qualified |
.2 pF |
.05 us |
120 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
500 MHz |
||||||||||||||
|
Gec Plessey Semiconductors |
PIN DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
100 mA |
SINGLE |
HIGH FREQUENCY TO KU BAND |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
MICROWAVE |
PIN Diodes |
150 Cel |
ATTENUATOR; LIMITER; SWITCHING |
-55 Cel |
O-CEMW-N2 |
1.2 ohm |
Not Qualified |
.25 W |
AVAILABLE IN BOTH POLARITIES |
2 us |
500 V |
SILICON |
|||||||||||||||||
|
Microchip Technology |
PIN DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
100 mA |
SINGLE |
HIGH FREQUENCY TO S BAND |
3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
100 V |
LONG FORM |
PIN Diodes |
ATTENUATOR; SWITCHING |
TIN LEAD |
O-XALF-W2 |
.5 ohm |
ISOLATED |
Not Qualified |
2.5 W |
2.4 pF |
LOW DISTORTION |
10 us |
e0 |
SILICON |
100 MHz |
||||||||||||||
|
|
Microchip Technology |
PIN DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
MEDIUM FREQUENCY TO VERY HIGH FREQUENCY |
1 V |
5 pF |
1 |
0 V |
LONG FORM |
Rectifier Diodes |
75 V |
150 Cel |
LIMITER |
-65 Cel |
O-LELF-R2 |
ISOLATED |
1.2 pF |
75 V |
2.5 A |
SILICON |
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|
Broadcom |
PIN DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
100 mA |
SINGLE |
.4 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
50 V |
LONG FORM |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
TIN LEAD |
O-LALF-W2 |
2.5 ohm |
1 |
ISOLATED |
Not Qualified |
.25 W |
.4 pF |
LOW HARMONIC DISTORTION |
1.3 us |
100 V |
e0 |
SILICON |
100 MHz |
||||||||||||
|
|
Skyworks Solutions |
PIN DIODE |
DUAL |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
10 mA |
SINGLE |
KA BAND |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
MICROWAVE |
PIN Diodes |
175 Cel |
LIMITER |
-65 Cel |
O-CDMW-N2 |
2.5 ohm |
Not Qualified |
.12 pF |
.005 us |
15 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
500 MHz |
||||||||||||||
|
|
Skyworks Solutions |
PIN DIODE |
DUAL |
FLAT |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
10 mA |
SINGLE |
KA BAND |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
MICROWAVE |
PIN Diodes |
175 Cel |
LIMITER |
-65 Cel |
O-CDMW-F2 |
1.5 ohm |
Not Qualified |
.26 pF |
1.17 us |
250 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
500 MHz |
||||||||||||||
|
Broadcom |
PIN DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
100 mA |
SINGLE |
.4 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
50 V |
LONG FORM |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
3.5 ohm |
1 |
ISOLATED |
Not Qualified |
.25 W |
.4 pF |
LOW HARMONIC DISTORTION |
2.5 us |
100 V |
e0 |
SILICON |
100 MHz |
|||||||||||
|
|
Skyworks Solutions |
PIN DIODE |
DUAL |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
10 mA |
SINGLE |
KA BAND |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
MICROWAVE |
PIN Diodes |
175 Cel |
LIMITER |
-65 Cel |
O-CDMW-N2 |
2.5 ohm |
Not Qualified |
.12 pF |
.007 us |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
500 MHz |
||||||||||||||
|
|
Microchip Technology |
PIN DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SERIES CONNECTED, 2 ELEMENTS |
VERY HIGH FREQUENCY |
.4 V |
8 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
LONG FORM |
Other Diodes |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
O-XELF-R2 |
ISOLATED |
4 pF |
2 A |
SILICON |
|||||||||||||||||||
|
Microchip Technology |
PIN DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
KU BAND |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
MICROWAVE |
LIMITER |
O-XEMW-N2 |
Not Qualified |
250 V |
SILICON |
||||||||||||||||||||||||||
|
|
M/a-com Technology Solutions |
PIN DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
HIGH FREQUENCY TO KU BAND |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
MICROWAVE |
175 Cel |
LIMITER |
O-CEMW-N2 |
Not Qualified |
LOW LEAKAGE |
35 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
TO-92 |
200 V |
e0 |
SILICON |
|||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
TO-92 |
20 V |
e0 |
SILICON |
|||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
10 mA |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
15 V |
CYLINDRICAL |
PIN Diodes |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
1.3 pF |
TO-92 |
20 V |
e0 |
235 |
SILICON |
||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
EUROPEAN PART NUMBER |
TO-92 |
200 V |
e0 |
SILICON |
||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
TO-92 |
200 V |
e0 |
SILICON |
|||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
EUROPEAN PART NUMBER |
TO-92 |
200 V |
e0 |
SILICON |
||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
10 mA |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
15 V |
CYLINDRICAL |
PIN Diodes |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
1.3 pF |
HIGH VOLTAGE |
TO-92 |
20 V |
e0 |
235 |
SILICON |
|||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
TO-92 |
20 V |
e0 |
SILICON |
|||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
EUROPEAN PART NUMBER |
TO-92 |
200 V |
e0 |
SILICON |
||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
TO-92 |
20 V |
e0 |
SILICON |
|||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
EUROPEAN PART NUMBER |
TO-92 |
20 V |
e0 |
SILICON |
||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
TO-92 |
200 V |
e0 |
SILICON |
|||||||||||||||||||
|
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
10 mA |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
20 V |
CYLINDRICAL |
PIN Diodes |
125 Cel |
SWITCHING |
TIN SILVER COPPER |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
1 pF |
HIGH VOLTAGE |
TO-92 |
200 V |
e1 |
260 |
SILICON |
||||||||||||
|
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
10 mA |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
15 V |
CYLINDRICAL |
PIN Diodes |
125 Cel |
SWITCHING |
TIN SILVER COPPER |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
1.3 pF |
HIGH VOLTAGE |
TO-92 |
20 V |
e1 |
260 |
SILICON |
||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
EUROPEAN PART NUMBER |
TO-92 |
20 V |
e0 |
SILICON |
||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
10 mA |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
20 V |
CYLINDRICAL |
PIN Diodes |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
1 pF |
HIGH VOLTAGE |
TO-92 |
200 V |
e0 |
235 |
SILICON |
|||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
1 ohm |
Not Qualified |
.28 W |
TO-92 |
200 V |
e0 |
SILICON |
|||||||||||||||||||
|
Onsemi |
PIN DIODE |
BOTTOM |
THROUGH-HOLE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CYLINDRICAL |
125 Cel |
SWITCHING |
TIN LEAD |
O-PBCY-T2 |
.85 ohm |
Not Qualified |
.4 W |
EUROPEAN PART NUMBER |
TO-92 |
20 V |
e0 |
SILICON |
||||||||||||||||||
|
NXP Semiconductors |
PIN DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
LOW FREQUENCY |
12 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
LONG FORM |
ATTENUATOR |
O-LALF-W2 |
10 ohm |
ISOLATED |
Not Qualified |
LOW LEAKAGE, LOW DISTORTION |
20 us |
SILICON |
PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.
PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.
PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.
PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.