ROUND PIN Diodes 126

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
5082-3039	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us	150 V	e0			SILICON	100 MHz
5082-3188#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	LONG FORM	PIN Diodes	150 Cel	SWITCHING			O-LALF-W2	.6 ohm		ISOLATED	Not Qualified	.25 W	1 pF	LOW HARMONIC DISTORTION	.07 us	35 V				SILICON	100 MHz
1N5767#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	2.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us	100 V	e0			SILICON	100 MHz
5082-3039#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us	150 V	e0			SILICON	100 MHz
5082-3306	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	KU BAND	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1 ohm			Not Qualified	1.25 W				70 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-3001#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			O-LALF-W2	1 ohm		ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us	200 V				SILICON	100 MHz
5082-3379#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2		1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us	50 V	e0			SILICON
5082-3077#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.5 ohm	1	ISOLATED	Not Qualified	.25 W	.3 pF	LOW HARMONIC DISTORTION	.1 us	200 V	e0			SILICON	100 MHz
5082-3303	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	3 W			.1 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HPND-4166	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM		150 Cel	ATTENUATOR	-65 Cel		O-LALF-W2	1.5 ohm		ISOLATED	Not Qualified	.25 W			.1 us	100 V				SILICON
1N5767	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-LALF-W2	2.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us	100 V	e0			SILICON	100 MHz
5082-3379#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2		1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us	50 V	e0			SILICON
HPND-4166G	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM		150 Cel	ATTENUATOR	-65 Cel		O-LALF-W2	1.5 ohm		ISOLATED	Not Qualified	.25 W			.1 us	100 V				SILICON
5082-3077	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.5 ohm	1	ISOLATED	Not Qualified	.25 W	.3 pF	LOW HARMONIC DISTORTION	.1 us	200 V	e0			SILICON	100 MHz
5082-3081#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	3.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	2.5 us	100 V	e0			SILICON	100 MHz
5082-3080#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	2.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us	100 V	e0			SILICON	100 MHz
5082-3379	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	8 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us	50 V	e0			SILICON	100 MHz
5082-3201	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	3 W			.1 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-3081#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	3.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	2.5 us	100 V	e0			SILICON	100 MHz
5082-3188	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	LONG FORM	PIN Diodes	150 Cel	SWITCHING	-65 Cel	TIN LEAD	O-LALF-W2	.6 ohm		ISOLATED	Not Qualified	.25 W	1 pF	LOW HARMONIC DISTORTION	.07 us	35 V	e0			SILICON	100 MHz
5082-3001#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			O-LALF-W2	1 ohm		ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us	200 V				SILICON	100 MHz
1N5719	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us	150 V	e0			SILICON	100 MHz
5082-3077#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.5 ohm	1	ISOLATED	Not Qualified	.25 W	.3 pF	LOW HARMONIC DISTORTION	.1 us	200 V	e0			SILICON	100 MHz
1N5719#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.3 pF	LOW HARMONIC DISTORTION	.1 us	150 V	e0			SILICON	100 MHz
5082-3039#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us	150 V	e0			SILICON	100 MHz
1N5719#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.3 pF	LOW HARMONIC DISTORTION	.1 us	150 V	e0			SILICON	100 MHz
1N5767#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR; SWITCHING			O-LALF-W2	2.5 ohm		ISOLATED	Not Qualified	.25 W		LOW HARMONIC DISTORTION	1.3 us	100 V				SILICON
5082-3101	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	1 W			.1 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-3202	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	3 W			.1 us	300 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-3001	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1 ohm		ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us	200 V	e0			SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.