ROUND PIN Diodes 126

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	JEDEC-95 Code	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
BAQ800T/R	NXP Semiconductors	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	LOW FREQUENCY	12 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified			LOW LEAKAGE, LOW DISTORTION	20 us						SILICON
934050600133	NXP Semiconductors	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	LOW FREQUENCY	6 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified				25 us						SILICON
934050600113	NXP Semiconductors	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	LOW FREQUENCY	6 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified				25 us						SILICON
BXY43-TP	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm		ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us		150 V	e3			SILICON	100 MHz
BXY44-T2P	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us		200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY43-TES	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm		ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us		150 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-TES	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm		ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us		200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY42-TS	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm		ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us		50 V	e3			SILICON	100 MHz
BXY43-P1S	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.75 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	1.5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.65 us		150 V	e3			SILICON	100 MHz
BXY42-T1(P)	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	175 Cel	SWITCHING		MATTE TIN	O-CXMW-G2	2.5 ohm			Not Qualified	.35 W	.24 pF	HIGH RELIABILITY	.05 us		50 V	e3			SILICON	100 MHz
BXY42-TH	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm		ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us		50 V	e3			SILICON	100 MHz
BXY44-T1S	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us		200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-T2H	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us		200 V	e3			SILICON		ESA-SCC-5513/030
BXY43-T1S	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	1.5 ohm			Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us		150 V	e3			SILICON	100 MHz
BXY42-TES	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm		ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us		50 V	e3			SILICON	100 MHz	ESA-SCC-5513/017
BXY44-T1ES	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us		200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY42-T1(ES)	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	175 Cel	SWITCHING		MATTE TIN	O-CXMW-G2	2.5 ohm			Not Qualified	.35 W	.24 pF	HIGH RELIABILITY	.05 us		50 V	e3			SILICON	100 MHz	ESA-SCC-5513/017
BXY43-P1ES	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.75 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	1.5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.65 us		150 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-T2ES	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us		200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY42-T1S	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	175 Cel	SWITCHING		MATTE TIN	O-CXMW-G2	2.5 ohm			Not Qualified	.35 W	.24 pF	HIGH RELIABILITY	.05 us		50 V	e3			SILICON	100 MHz
BXY44-T1P	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us		200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-TP	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm		ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us		200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY43-TS	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm		ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us		150 V	e3			SILICON	100 MHz
BXY42-T1H	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	175 Cel	SWITCHING		MATTE TIN	O-CXMW-G2	2.5 ohm			Not Qualified	.35 W	.24 pF	HIGH RELIABILITY	.05 us		50 V	e3			SILICON	100 MHz
BA489	Infineon Technologies	PIN DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	PLASTIC/EPOXY		SINGLE		.8 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CYLINDRICAL						O-PBCY-T3	11 ohm			Not Qualified						50 V				SILICON
BXY43-TH	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm		ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us		150 V	e3			SILICON	100 MHz
BXY43-P1H	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.75 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	1.5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.65 us		150 V	e3			SILICON	100 MHz
BXY43-T1(ES)	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	1.5 ohm			Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us		150 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-T1H	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us		200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY43-T1H	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	1.5 ohm			Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us		150 V	e3			SILICON	100 MHz
BXY43-P1P	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.75 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	1.5 ohm			Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.65 us		150 V	e3			SILICON	100 MHz
BXY43-T1(P)	Infineon Technologies	PIN DIODE	UNSPECIFIED	GULL WING	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CXMW-G2	1.5 ohm			Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us		150 V	e3			SILICON	100 MHz
BXY44-TH	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm		ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us		200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-T2S	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm			Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us		200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY42-TP	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm		ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us		50 V	e3			SILICON	100 MHz
BXY44-TS	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm		ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us		200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
1SV99	Toshiba	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY	10 mA	SINGLE	ULTRA HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	CYLINDRICAL		125 Cel	ATTENUATOR; SWITCHING		Tin/Lead (Sn/Pb)	O-PBCY-T2	10 ohm			Not Qualified						50 V	e0			SILICON	100 MHz
1SV121TE	Renesas Electronics	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	HIGH FREQUENCY	.7 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified	.25 W		HIGH RELIABILITY		DO-34	100 V				SILICON
1SV121TD	Renesas Electronics	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	HIGH FREQUENCY	.7 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified	.25 W		HIGH RELIABILITY		DO-34	100 V				SILICON
1SV121TAX	Renesas Electronics	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	HIGH FREQUENCY	.7 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified	.25 W		HIGH RELIABILITY		DO-34	100 V				SILICON
1SV121TDX	Renesas Electronics	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	HIGH FREQUENCY	.7 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified	.25 W		HIGH RELIABILITY		DO-34	100 V				SILICON
1SV121RX	Renesas Electronics	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	HIGH FREQUENCY	.7 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified	.25 W		HIGH RELIABILITY		DO-34	100 V				SILICON
1SV121RY	Renesas Electronics	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	HIGH FREQUENCY	.7 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified	.25 W		HIGH RELIABILITY		DO-34	100 V				SILICON
1SV121TA	Renesas Electronics	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	HIGH FREQUENCY	.7 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified	.25 W		HIGH RELIABILITY		DO-34	100 V				SILICON
5082-3305	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	KU BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1 ohm			Not Qualified	.7 W					70 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-3304	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	3 W			.1 us		250 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-3080#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	2.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us		100 V	e0			SILICON	100 MHz
5082-3188#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	LONG FORM	PIN Diodes	150 Cel	SWITCHING			O-LALF-W2	.6 ohm		ISOLATED	Not Qualified	.25 W	1 pF	LOW HARMONIC DISTORTION	.07 us		35 V				SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.