FLAT PIN Diodes 225

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
BAP51-02	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	Tin (Sn)	R-PDSO-F2	2.5 ohm	1	Not Qualified	.715 W	.55 pF			60 V	e3	30	260	SILICON	100 MHz
BAP63-02T/R	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.5 ohm		Not Qualified	.715 W	.36 pF		.31 us	50 V	e3			SILICON	100 MHz
BAP50-02T/R	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	TIN	R-PDSO-F2	5 ohm		Not Qualified	.715 W	.4 pF	HIGH VOLTAGE	1.05 us	50 V	e3			SILICON	100 MHz
BAP51-02T/R	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	TIN	R-PDSO-F2	2.5 ohm		Not Qualified	.715 W	.4 pF			60 V	e3			SILICON	100 MHz
BAP64-02T/R	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.35 ohm		Not Qualified	.715 W	.48 pF	HIGH VOLTAGE	1.55 us	175 V	e3			SILICON	100 MHz
BAP64-02	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-F2	1.35 ohm	1	Not Qualified	.715 W	.52 pF	HIGH VOLTAGE	1.55 us	175 V	e3	30	260	SILICON	100 MHz
BAP65-02T/R	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	.9 ohm	1	Not Qualified	.715 W	.65 pF	HIGH VOLTAGE	.17 us	30 V	e3	30	260	SILICON	100 MHz
BAP65-02	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	.9 ohm	1	Not Qualified	.715 W	.65 pF	HIGH VOLTAGE	.17 us	30 V	e3	30	260	SILICON	100 MHz
BAP65-01	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			R-PDSO-F2	.9 ohm		Not Qualified	.315 W	.375 pF		.17 us	30 V				SILICON	100 MHz
BAP50-02	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	Tin (Sn)	R-PDSO-F2	5 ohm	1	Not Qualified	.715 W	.4 pF	HIGH VOLTAGE	1.05 us	50 V	e3	30	260	SILICON	100 MHz
BAP63-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.5 ohm		Not Qualified	.715 W	.36 pF		.31 us	50 V	e3	30	260	SILICON	100 MHz
BAP63-02	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-F2	1.5 ohm	1	Not Qualified	.715 W	.36 pF		.31 us	50 V	e3	30	260	SILICON	100 MHz
BXY44P-FPH	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	1 mA	COMMON CATHODE, 2 ELEMENTS		.75 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	FLATPACK	PIN Diodes	175 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1200 ohm		Not Qualified	.5 W	.5 pF		.8 us	200 V	e3			SILICON	100 MHz
BA895	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	10 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			R-PDSO-F2	7 ohm	1	Not Qualified		.23 pF		1.6 us	50 V				SILICON
BAR50-02V	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO C BAND	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		Matte Tin (Sn)	R-PDSO-F2	4.5 ohm	1	Not Qualified	.25 W	.3 pF	LOW DISTORTION	1.1 us	50 V	e3			SILICON
BAR88-02VH6327	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm	1		.25 W	.25 pF		.5 us	80 V	e3		260	SILICON	100 MHz
BXY44-FPS	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.75 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	FLATPACK	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	5 ohm		Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz
BA895E6433	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1.5 mA	SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			R-PDSO-F2	7 ohm		Not Qualified		.26 pF		1.6 us			NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
BXY42BB-S	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE		.15 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes	175 Cel	SWITCHING			R-XDMW-F2			Not Qualified		.15 pF		.02 us	30 V				SILICON
BXY43-FPH	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.85 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	FLATPACK	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	1.5 ohm		Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY43P-FPP	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	.02 mA	COMMON CATHODE, 2 ELEMENTS		.85 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	FLATPACK	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1.5 ohm		Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY44P-FPP	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	1 mA	COMMON CATHODE, 2 ELEMENTS		.75 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	FLATPACK	PIN Diodes	175 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1200 ohm		Not Qualified	.5 W	.5 pF		.8 us	200 V	e3			SILICON	100 MHz
BXY43-FPES	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.85 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	FLATPACK	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	1.5 ohm		Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44P-FPS	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	1 mA	COMMON CATHODE, 2 ELEMENTS		.75 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	FLATPACK	PIN Diodes	175 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1200 ohm		Not Qualified	.5 W	.5 pF		.8 us	200 V	e3			SILICON	100 MHz
BXY43P-FPES	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	.02 mA	COMMON CATHODE, 2 ELEMENTS		.85 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	FLATPACK	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1.5 ohm		Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44P-FPES	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	1 mA	COMMON CATHODE, 2 ELEMENTS		.75 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	FLATPACK	PIN Diodes	175 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1200 ohm		Not Qualified	.5 W	.5 pF		.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY43-FPS	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.85 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	FLATPACK	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	1.5 ohm		Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY43P-FPS	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	.02 mA	COMMON CATHODE, 2 ELEMENTS		.85 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	FLATPACK	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1.5 ohm		Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY43-FPP	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE		.85 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	FLATPACK	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	1.5 ohm		Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY43P	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	.02 mA	COMMON CATHODE, 2 ELEMENTS		.85 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	FLATPACK	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			S-CDFP-F4	3 ohm		Not Qualified	.5 W	.85 pF		.65 us					SILICON	100 MHz
BAR88-02V	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		Matte Tin (Sn)	R-PDSO-F2	2.5 ohm	1	Not Qualified	.25 W	.35 pF	LOW DISTORTION	.5 us	80 V	e3			SILICON	100 MHz
BA895E6327	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1.5 mA	SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	125 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-F2	7 ohm	1	Not Qualified		.26 pF		1.6 us		e3		260	SILICON	100 MHz
BXY44-FPES	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.75 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	FLATPACK	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	5 ohm		Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-FP	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			R-CDSO-F4	5 ohm		Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.8 us	200 V				SILICON		ESA-SCC-5513/030
BXY44-FPP	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.75 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	FLATPACK	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	5 ohm		Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz
BXY43P-FPH	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	.02 mA	COMMON CATHODE, 2 ELEMENTS		.85 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	FLATPACK	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	S-CDFP-F4	1.5 ohm		Not Qualified	.5 W	.6 pF	HIGH RELIABILITY	.65 us	150 V	e3			SILICON	100 MHz
BXY44-FPH	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE		.75 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	FLATPACK	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-CDFP-F4	5 ohm		Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.8 us	200 V	e3			SILICON	100 MHz
SP000743446	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel		R-PDSO-F2	.9 ohm			.25 W			.08 us	30 V				SILICON
BAR67-02V	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	L BAND	.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-F2	1.8 ohm	1	Not Qualified	.25 W	.35 pF		.7 us	150 V	e3			SILICON
BAR6302WE6327XT	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING			R-PDSO-F2	2 ohm			.25 W			.075 us	50 V				SILICON
BAR64-02V	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes	125 Cel	ATTENUATOR; SWITCHING	-55 Cel	TIN	R-PDSO-F2	1.35 ohm	1	Not Qualified	.25 W	.23 pF	LOW DISTORTION	1.55 us	150 V	e3			SILICON		AEC-Q101
BAR63-07F	Infineon Technologies	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE			SWITCHING			R-PDSO-F4	2 ohm	1	Not Qualified	.25 W			.075 us	50 V				SILICON
BAR63-02W	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING			R-PDSO-F2	2 ohm	1	Not Qualified	.25 W	.3 pF		.075 us	50 V				SILICON	100 MHz
BAR65-02W	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			SWITCHING			R-PDSO-F2	.9 ohm		Not Qualified				.08 us	30 V				SILICON
BAR63-02V	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		TIN	R-PDSO-F2	2 ohm	1	Not Qualified	.25 W	.21 pF		.075 us	50 V	e3			SILICON
BAR6402VE6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-F2	1.35 ohm			.25 W			1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
BAR65-02L-E6433	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	125 Cel					.95 ohm				.5 pF		.08 us	30 V				SILICON	100 MHz
BAR65-02V	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	3 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		Matte Tin (Sn)	R-PDSO-F2	.9 ohm	1	Not Qualified	.25 W	.57 pF		.08 us	30 V	e3			SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.