FLAT PIN Diodes 225

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Diode Resistive Test Current Config Frequency Band Maximum Forward Voltage (VF) Maximum Diode Capacitance Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Application Minimum Operating Temperature Terminal Finish JESD-30 Code Maximum Diode Forward Resistance Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features Nominal Minority Carrier Lifetime JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Diode Resistive Test Frequency Reference Standard

BAR6302WH6327XTSA1

Infineon Technologies

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

150 Cel

SWITCHING

R-PDSO-F2

2 ohm

.25 W

.075 us

50 V

SILICON

BAR6302WH6433TR

Infineon Technologies

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

150 Cel

SWITCHING

R-PDSO-F2

2 ohm

.25 W

.075 us

50 V

SILICON

BAR6702VH6327XTSA1

Infineon Technologies

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

L BAND

.9 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

150 Cel

ATTENUATOR; SWITCHING

TIN

R-PDSO-F2

1.8 ohm

1

.25 W

.7 us

150 V

e3

SILICON

BAR65-07F

Infineon Technologies

PIN DIODE

DUAL

FLAT

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.9 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

SWITCHING

R-PDSO-F4

.9 ohm

1

Not Qualified

.25 W

.08 us

30 V

SILICON

BAR64-02W

Infineon Technologies

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

MEDIUM FREQUENCY TO S BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

1

20 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

TIN LEAD

R-PDSO-F2

1.35 ohm

Not Qualified

.25 W

.35 pF

HIGH VOLTAGE

1.55 us

150 V

e0

SILICON

JDP4P02AT

Toshiba

PIN DIODE

DUAL

FLAT

4

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

TIN LEAD

R-PDSO-F4

1.5 ohm

Not Qualified

.3 pF

30 V

e0

SILICON

100 MHz

JDP2S12CR(TE85L,QM

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

40 V

SMALL OUTLINE

175 Cel

SWITCHING

R-PDSO-F2

.7 ohm

1 W

1 pF

PD-CASE

180 V

SILICON

100 MHz

JDP2501E

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

125 Cel

ATTENUATOR

R-PDSO-F2

1 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SILICON

JDP2S02T

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.5 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR

TIN LEAD

R-PDSO-F2

1.5 ohm

Not Qualified

.3 pF

30 V

e0

SILICON

100 MHz

JDP2S02S

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.5 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

150 Cel

ATTENUATOR

TIN LEAD

R-PDSO-F2

1.5 ohm

Not Qualified

e0

SILICON

1SV308

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY

.5 pF

POSITIVE-INTRINSIC-NEGATIVE

1

30 V

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

R-PDSO-F2

1.1 ohm

Not Qualified

.5 pF

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1500 MHz

JDP2S01AFS

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

TIN LEAD

R-PDSO-F2

1 ohm

Not Qualified

.65 pF

30 V

e0

SILICON

100 MHz

JDP2S12CR

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

175 Cel

SWITCHING

R-PDSO-F2

.7 ohm

Not Qualified

180 V

SILICON

JDP2S01E

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

ULTRA HIGH FREQUENCY

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR

TIN LEAD

R-PDSO-F2

1 ohm

Not Qualified

.65 pF

30 V

e0

SILICON

100 MHz

JDP2S02AFS(TL3FMC)

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

150 Cel

SWITCHING

R-PDSO-F2

1.5 ohm

30 V

SILICON

JDP2S01T

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

POSITIVE-INTRINSIC-NEGATIVE

1 V

SMALL OUTLINE

PIN Diodes

125 Cel

TIN LEAD

R-PDSO-F2

1 ohm

Not Qualified

.65 pF

30 V

e0

SILICON

100 MHz

JDP2S02AFS

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

R-PDSO-F2

1.5 ohm

Not Qualified

.3 pF

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

100 MHz

JDP2S02AFS(TL3HIKI

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

150 Cel

SWITCHING

R-PDSO-F2

1.5 ohm

30 V

SILICON

JDP2S05FS

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

1 mA

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.42 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

TIN LEAD

R-PDSO-F2

2.2 ohm

Not Qualified

.32 pF

20 V

e0

SILICON

100 MHz

JDP2S04E

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

1

50 V

SMALL OUTLINE

PIN Diodes

125 Cel

ATTENUATOR

R-PDSO-F2

Not Qualified

.25 pF

50 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

JDP2S01S

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR

TIN LEAD

R-PDSO-F2

1 ohm

Not Qualified

.65 pF

30 V

e0

SILICON

100 MHz

1SV308,L3F(T

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.5 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

125 Cel

SWITCHING

R-PDSO-F2

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

JDP2S02AS

Toshiba

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.5 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR

TIN LEAD

R-PDSO-F2

1.5 ohm

Not Qualified

.3 pF

30 V

e0

SILICON

100 MHz

JDP3C04TU

Toshiba

PIN DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

150 Cel

ATTENUATOR

R-PDSO-F3

1.5 ohm

Not Qualified

SILICON

HVC136

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

2 mA

SINGLE

HIGH FREQUENCY

.45 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

R-PDSO-F2

2.5 ohm

Not Qualified

.15 W

60 V

SILICON

100 MHz

HVC133TRV

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

SWITCHING

R-PDSO-F2

.7 ohm

Not Qualified

.15 W

15 V

SILICON

RKP402KS

Renesas Electronics

PIN DIODE

DUAL

FLAT

12

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SEPARATE, 5 ELEMENTS

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

5

1 V

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

R-PDSO-F12

1.3 ohm

Not Qualified

.1 W

.35 pF

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

100 MHz

RKP201KK

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

2 mA

SINGLE

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

R-PDSO-F2

2 ohm

1

Not Qualified

.15 W

.35 pF

30 V

SILICON

100 MHz

RKP413KS

Renesas Electronics

PIN DIODE

DUAL

FLAT

12

YES

RECTANGULAR

PLASTIC/EPOXY

2 mA

SEPARATE, 6 ELEMENTS

.31 pF

POSITIVE-INTRINSIC-NEGATIVE

6

1 V

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

R-PDSO-F12

1.5 ohm

Not Qualified

.31 pF

30 V

SILICON

100 MHz

RKP300KK

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

.25 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

R-PDSO-F2

3.7 ohm

Not Qualified

.1 W

.25 pF

30 V

SILICON

100 MHz

HVC131-E

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

125 Cel

SWITCHING

TIN BISMUTH

R-PDSO-F2

1 ohm

1

Not Qualified

.15 W

e6

SILICON

RKP301KL

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

20 V

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

R-PDSO-F2

2.5 ohm

Not Qualified

.1 W

.3 pF

30 V

SILICON

100 MHz

HVC132TRU

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.5 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

SWITCHING

R-PDSO-F2

2 ohm

Not Qualified

.15 W

60 V

SILICON

HVL148

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

.37 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

R-PDSO-F2

2.5 ohm

Not Qualified

.1 W

30 V

SILICON

100 MHz

HVC131TRF-E

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

Tin/Bismuth (Sn/Bi)

R-PDSO-F2

1 ohm

1

Not Qualified

.15 W

.8 pF

60 V

e6

20

260

SILICON

100 MHz

RKP410KS

Renesas Electronics

PIN DIODE

DUAL

FLAT

12

YES

RECTANGULAR

PLASTIC/EPOXY

2 mA

SEPARATE, 6 ELEMENTS

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

6

1 V

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

R-PDSO-F12

1.3 ohm

1

Not Qualified

.1 W

.35 pF

30 V

SILICON

100 MHz

HVC131TRF

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

SWITCHING

TIN LEAD

R-PDSO-F2

1 ohm

Not Qualified

.15 W

60 V

e0

SILICON

HVD131KRF-E

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

125 Cel

SWITCHING

R-PDSO-F2

1 ohm

.15 W

SILICON

HVL142A-E

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

125 Cel

SWITCHING

R-PDSO-F2

1.3 ohm

Not Qualified

.1 W

SILICON

HVC133KRU

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

SWITCHING

R-PDSO-F2

.7 ohm

Not Qualified

.15 W

15 V

SILICON

RKP411KS

Renesas Electronics

PIN DIODE

DUAL

FLAT

12

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

1SE4

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

4

1 V

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

R-PDSO-F12

1.3 ohm

1

Not Qualified

.1 W

.35 pF

30 V

SILICON

100 MHz

HVD147

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

.31 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

R-PDSO-F2

1.5 ohm

Not Qualified

.15 W

30 V

SILICON

100 MHz

HVC133TRF-E

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

SWITCHING

TIN BISMUTH

R-PDSO-F2

.7 ohm

1

Not Qualified

.15 W

15 V

e6

SILICON

HVL145

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

HIGH FREQUENCY

.45 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

R-PDSO-F2

1.8 ohm

Not Qualified

.1 W

60 V

SILICON

100 MHz

RKP201KM

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

125 Cel

SWITCHING

R-PDSO-F2

2 ohm

Not Qualified

.1 W

SILICON

HVC142A-E

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

125 Cel

SWITCHING

TIN BISMUTH

R-PDSO-F2

1.3 ohm

1

Not Qualified

.15 W

e6

SILICON

RKP409KS

Renesas Electronics

PIN DIODE

DUAL

FLAT

12

YES

RECTANGULAR

PLASTIC/EPOXY

2 mA

SEPARATE, 4 ELEMENTS

.31 pF

POSITIVE-INTRINSIC-NEGATIVE

4

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

R-PDSO-F12

1.5 ohm

1

Not Qualified

.1 W

30 V

SILICON

100 MHz

HVC142AKRF-E

Renesas Electronics

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

125 Cel

SWITCHING

TIN BISMUTH

R-PDSO-F2

1.3 ohm

.15 W

e6

SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.