GULL WING PIN Diodes 1,089

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	JEDEC-95 Code	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
BAP1321-03T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	1.3 ohm		Not Qualified	.5 W			.5 us			e3			SILICON
934056542115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				ATTENUATOR; SWITCHING		TIN	R-PDSO-G2	2 ohm	1	Not Qualified	.5 W			1.55 us		175 V	e3			SILICON
BAT18212	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	SWITCHING		Tin (Sn)	R-PDSO-G3	.7 ohm	1	Not Qualified						35 V	e3			SILICON
BAP70AM,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	PLASTIC/EPOXY		2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		1.1 V	.25 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	4	50 V	SMALL OUTLINE	Other Diodes	50 V	150 Cel	ATTENUATOR	-65 Cel	TIN	R-PDSO-G6	1.9 ohm	1	Not Qualified	.3 W		LOW DISTORTION	1.25 us			e3	30	260	SILICON
BAT18,215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		TIN	R-PDSO-G3	.7 ohm	1	Not Qualified		.75 pF			TO-236AB	35 V	e3	30	260	SILICON	100 MHz
934056549115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR; SWITCHING		PURE TIN	R-PDSO-G3	.9 ohm		Not Qualified	.24 W			.17 us		30 V				SILICON
BAP63-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	1.5 ohm		Not Qualified	.5 W	.4 pF		.31 us		50 V	e3	30	260	SILICON	100 MHz
BAP64-04WT/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.35 ohm	1	Not Qualified	.24 W			1.55 us			e3	30	260	SILICON
BAP63-05W	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.5 ohm		Not Qualified	.24 W	.4 pF		.31 us		50 V	e3	30	260	SILICON	100 MHz
BAP51-03	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE			.55 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	Tin (Sn)	R-PDSO-G2	2.5 ohm	1	Not Qualified	.5 W	.55 pF		.55 us		60 V	e3	30	260	SILICON	100 MHz
BAP51-06W	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON ANODE, 2 ELEMENTS			.55 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	TIN	R-PDSO-G3	2.5 ohm		Not Qualified	.24 W	.4 pF		.55 us		50 V	e3	30	260	SILICON	100 MHz
BAP64-06	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON ANODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-G3	1.35 ohm	1	Not Qualified	.25 W	.52 pF	HIGH VOLTAGE	1.55 us	TO-236AB	175 V	e3	30	260	SILICON	100 MHz
BAP64Q,125	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	5	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	COMPLEX	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		4	100 V	SMALL OUTLINE			150 Cel	ATTENUATOR	-65 Cel	TIN	R-PDSO-G5	1.35 ohm	1		.125 W	.23 pF		1.55 us			e3	30	260	SILICON	100 MHz	IEC-60134
BAP64-05W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	1 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	40 ohm	1	Not Qualified	.24 W	.37 pF	HIGH VOLTAGE	1.55 us		100 V	e3	30	260	SILICON	100 MHz
BAP64-06T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.35 ohm		Not Qualified	.25 W		HIGH VOLTAGE	1.55 us	TO-236AB		e3			SILICON
BAP64-03/DG/B2/AX	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		R-PDSO-G2	1.35 ohm			.5 W	.48 pF	HIGH VOLTAGE	1.55 us		175 V				SILICON	100 MHz	IEC-60134
BAP51-04W	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.55 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel		-65 Cel	TIN	R-PDSO-G3	2.5 ohm		Not Qualified	.24 W			.55 us			e3			SILICON
BAP64-05T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	40 ohm		Not Qualified	.25 W		HIGH VOLTAGE	1.55 us			e3			SILICON
BAP64-05WT/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	40 ohm		Not Qualified	.24 W		HIGH VOLTAGE	1.55 us		100 V	e3			SILICON
BAP64-06WT/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.35 ohm		Not Qualified	.24 W			1.55 us			e3			SILICON
BAP65-03	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	.9 ohm	1	Not Qualified	.5 W	.65 pF		.17 us		30 V	e3	30	260	SILICON	100 MHz
BAP65-05WT/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	.9 ohm		Not Qualified	.24 W			.17 us		30 V	e3			SILICON
BAP50-05T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS			.6 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel		-65 Cel	TIN	R-PDSO-G3	5 ohm		Not Qualified	.25 W				TO-236AB		e3			SILICON
BAP64-05	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-G3	40 ohm	1	Not Qualified	.25 W	.52 pF	HIGH VOLTAGE	1.55 us		175 V	e3	30	260	SILICON	100 MHz
BAP65-05W	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-G3	.9 ohm		Not Qualified	.24 W	.7 pF		.17 us		30 V	e3	30	260	SILICON	100 MHz
BAP51-05W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS			.55 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	TIN	R-PDSO-G3	2.5 ohm	1	Not Qualified		.4 pF		.55 us		50 V	e3	30	260	SILICON	100 MHz
BAP64-04,215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	40 ohm	1	Not Qualified	.25 W	.52 pF	HIGH VOLTAGE	1.55 us		175 V	e3	30	260	SILICON	100 MHz
BAP64-04W	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.35 ohm	1	Not Qualified	.24 W	.52 pF		1.55 us		100 V	e3	30	260	SILICON	100 MHz
BAP64-04T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	40 ohm		Not Qualified	.25 W		HIGH VOLTAGE	1.55 us			e3			SILICON
BAP64-05TRL	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	S BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.35 ohm		Not Qualified	.25 W		HIGH VOLTAGE	1.55 us			e3			SILICON
BAP64-05W	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	1 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-G3	40 ohm		Not Qualified	.24 W	.37 pF	HIGH VOLTAGE	1.55 us		100 V	e3	30	260	SILICON	100 MHz
BAP50-05W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS			.6 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	TIN	R-PDSO-G3	5 ohm	1	Not Qualified	.24 W	.45 pF		1.05 us		50 V	e3	30	260	SILICON	100 MHz
BAP50-05	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON ANODE, 2 ELEMENTS			.6 pF	POSITIVE-INTRINSIC-NEGATIVE		2	1 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	Tin (Sn)	R-PDSO-G3	5 ohm	1	Not Qualified	.25 W	.6 pF			TO-236AB	50 V	e3	30	260	SILICON	100 MHz
BAP50-05WT/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS			.6 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel		-65 Cel	TIN	R-PDSO-G3	5 ohm		Not Qualified	.24 W			1.05 us			e3			SILICON
BAP65-05	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	COMMON CATHODE, 2 ELEMENTS			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-G3	.9 ohm	1	Not Qualified	.25 W	.7 pF		.17 us	TO-236AB	30 V	e3	30	260	SILICON	100 MHz
BAP64-05TRL13	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	S BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.35 ohm		Not Qualified	.25 W		HIGH VOLTAGE	1.55 us			e3			SILICON
BAP50-04	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.6 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	Tin (Sn)	R-PDSO-G3	5 ohm	1	Not Qualified	.25 W	.45 pF		1.05 us	TO-236AB	50 V	e3	30	260	SILICON	100 MHz
BAP64-04TRL13	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.35 ohm		Not Qualified	.25 W		HIGH VOLTAGE	1.55 us			e3			SILICON
BAP64-03T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	1.35 ohm		Not Qualified	.5 W		HIGH VOLTAGE	1.55 us			e3			SILICON
BAP50-03T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.55 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel		-65 Cel	TIN	R-PDSO-G2	5 ohm		Not Qualified	.5 W						e3			SILICON
BAP50-04W	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.6 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	Tin (Sn)	R-PDSO-G3	5 ohm		Not Qualified	.24 W	.45 pF		1.05 us		50 V	e3	30	260	SILICON	100 MHz
BAP64-03	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-G2	1.35 ohm	1	Not Qualified	.5 W	.52 pF	HIGH VOLTAGE	1.55 us		175 V	e3	30	260	SILICON	100 MHz
BAP63-05W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.5 ohm		Not Qualified	.24 W	.4 pF		.31 us		50 V	e3	30	260	SILICON	100 MHz
BAP64-04	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-G3	40 ohm	1	Not Qualified	.25 W	.52 pF	HIGH VOLTAGE	1.55 us		175 V	e3	30	260	SILICON	100 MHz
BAP65-05,215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	COMMON CATHODE, 2 ELEMENTS			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	.9 ohm	1	Not Qualified	.25 W	.7 pF		.17 us	TO-236AB	30 V	e3	30	260	SILICON	100 MHz
BAP51-03T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.55 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel		-65 Cel	TIN	R-PDSO-G2	2.5 ohm		Not Qualified	.5 W			.55 us			e3			SILICON
BAP50-05W	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON ANODE, 2 ELEMENTS			.6 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	Tin (Sn)	R-PDSO-G3	5 ohm		Not Qualified	.24 W	.45 pF		1.05 us		50 V	e3	30	260	SILICON	100 MHz
BAP64Q	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	5	YES	RECTANGULAR	PLASTIC/EPOXY		COMPLEX	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		4		SMALL OUTLINE			150 Cel	ATTENUATOR	-65 Cel	TIN	R-PDSO-G5	1.35 ohm	1	Not Qualified	.125 W			1.55 us			e3	30	260	SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.